公开(公告)号：US20160240374A1

公开(公告)日：2016-08-18

申请号：US15043242

申请日：2016-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru KASAI ,  Kotaro MIYATANI ,  Takuya KUROTORI ,  Kenichi KOTE ,  Yutaka FUJINO ,  Akira TANIHARA ,  Kohei KAWAMURA

IPC: H01L21/02

CPC classification number: H01L21/02345 ,  H01L21/0212 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02315

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract translation: 在与金属接触的氟碳系绝缘膜的形成方法中，在含氢气氛中对附着有水分的金属照射微波。 然后，对照射微波的金属进行基于碳氟化合物气体的等离子体CVD，形成绝缘膜。

公开(公告)号：US20140158302A1

公开(公告)日：2014-06-12

申请号：US14095563

申请日：2013-12-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Shigeru KASAI ,  Hiroyuki MIYASHITA ,  Yuki OSADA ,  Akira TANIHARA ,  Yutaka FUJINO

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32201

Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Abstract translation: 微波辐射天线包括具有微波辐射表面的天线体; 处理气体入口，被配置为将处理气体引入到天线体中; 气体扩散空间，其构造成将所述处理气体扩散到所述天线体中; 多个气体出口，其设置在所述天线体中并且被配置为将所述处理气体排出到所述室中; 在槽与气体扩散空间和气体出口分离的状态下设置在天线体中的多个槽; 以及设置在天线体的微波辐射面侧的环状电介质部件，以覆盖形成槽的槽形成区域。 通过微波辐射通过狭缝和环形电介质构成的微波辐射表面形成金属表面波，并通过金属表面波产生表面波等离子体。

公开(公告)号：US20230061151A1

公开(公告)日：2023-03-02

申请号：US17820929

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Hideki YUASA ,  Hiroyuki IKUTA ,  Yutaka FUJINO ,  Makoto WADA ,  Hirokazu UEDA

IPC: C23C16/56 ,  C23C16/34

Abstract: A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.

公开(公告)号：US20220223378A1

公开(公告)日：2022-07-14

申请号：US17277188

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki IKUTA ,  Hirokazu UEDA ,  Yutaka FUJINO

IPC: H01J37/32

Abstract: This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

公开(公告)号：US20170309452A1

公开(公告)日：2017-10-26

申请号：US15488232

申请日：2017-04-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka FUJINO ,  Tomohito KOMATSU ,  Taro IKEDA ,  Jun NAKAGOMI ,  Takeo WAKUTSU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.