公开(公告)号：US11807938B2

公开(公告)日：2023-11-07

申请号：US16775439

申请日：2020-01-29

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Rui Kanemura

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4412 ,  C23C16/45544 ,  C23C16/52

Abstract: An exhaust device includes: a first pressure regulator provided in an exhaust pipe connected to a processing container; a second pressure regulator provided on a downstream side of the first pressure regulator; a first vacuum gauge provided on an upstream side of the first pressure regulator; and a second vacuum gauge provided between the first pressure regulator and the second pressure regulator.

公开(公告)号：US10957535B2

公开(公告)日：2021-03-23

申请号：US16409199

申请日：2019-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Motoyama ,  Younggi Hong

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  C23C16/52 ,  C23C16/56 ,  C23C16/24 ,  C23C16/04 ,  C23C16/40 ,  H01L21/768 ,  H01L21/76 ,  H01L21/3065

Abstract: There is provided a method of forming a semiconductor film, including: a first process of supplying a first semiconductor raw material gas onto a substrate having recesses formed therein to form a first semiconductor film in each of the recesses, each of the recesses being covered with an insulating film; a second process of supplying a halogen-containing etching gas onto the substrate to etch the first semiconductor film while exposing a surface of the insulating film in an upper portion of an inner wall of each of the recesses and leaving the first semiconductor film formed on a bottom surface of each of the recesses; and a third process of simultaneously supplying a halogen-containing semiconductor gas and a semiconductor hydride gas onto the substrate to form a second semiconductor film on the first semiconductor film formed on the bottom surface of each of the recesses.

公开(公告)号：US10676820B2

公开(公告)日：2020-06-09

申请号：US16186921

申请日：2018-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada ,  Yutaka Motoyama

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/24 ,  C23C16/28

Abstract: There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

公开(公告)号：US12191140B2

公开(公告)日：2025-01-07

申请号：US17804170

申请日：2022-05-26

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Atsushi Endo

IPC: H01L21/02 ,  C23C16/458

Abstract: A method for manufacturing a semiconductor device includes supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess, supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess, supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess, and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas.

公开(公告)号：US11239076B2

公开(公告)日：2022-02-01

申请号：US16815682

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Motoyama ,  Hiroyuki Hayashi

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3065

Abstract: A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment.

公开(公告)号：US11062904B2

公开(公告)日：2021-07-13

申请号：US16685627

申请日：2019-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Motoyama ,  Atsushi Endo

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/306 ,  C23C16/52 ,  C23C16/24 ,  C23C16/06 ,  H01L21/67 ,  H01L27/11582 ,  H01L27/11556

Abstract: There is provided a method of forming a polysilicon film, which includes: forming an amorphous silicon film on a substrate; forming a cap layer, which is formed of an amorphous germanium film or an amorphous silicon germanium film, on the amorphous silicon film; forming crystal nuclei of a silicon in the amorphous silicon film by heating the substrate at a first temperature; removing the cap layer after the crystal nuclei are formed; and growing the crystal nuclei by heating the substrate from which the cap layer is removed, at a second temperature equal to or higher than the first temperature.

公开(公告)号：US09970111B2

公开(公告)日：2018-05-15

申请号：US14312137

申请日：2014-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei Fukushima ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Koichi Shimada ,  Takeshi Ando

IPC: C23C16/507 ,  H01L21/02 ,  H05H1/46 ,  C23C16/452 ,  H01J37/32

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32779

Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

公开(公告)号：USD784937S1

公开(公告)日：2017-04-25

申请号：US29524897

申请日：2015-04-24

Applicant: Tokyo Electron Limited

Designer： Yutaka Motoyama ,  Kohei Fukushima

公开(公告)号：US09487859B2

公开(公告)日：2016-11-08

申请号：US14664986

申请日：2015-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Motoyama ,  Kohei Fukushima ,  Keisuke Suzuki ,  Hiromi Takahashi

IPC: C23C16/44 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/4411 ,  C23C16/4401 ,  C23C16/45546 ,  C23C16/46

Abstract: An operating method of a vertical heat treatment apparatus which performs a film forming process by keeping the interior of a vertical reaction tube surrounded by a heating mechanism at a vacuum atmosphere and by supplying film forming gases to substrates accommodated within the reaction tube, includes: performing a film forming process with respect to the substrates by carrying a substrate holder holding a plurality of substrates in a shelf form into the reaction tube; carrying out the substrate holder from the reaction tube; and carrying a cooling jig into the reaction tube to cool an inner wall of the reaction tube so as to peel a thin film adhering to the inner wall of the reaction tube by a thermal stress and so as to collect the thin film in the cooling jig by thermophoresis.

Abstract translation: 一种垂直热处理装置的操作方法，其通过将由加热机构包围的垂直反应管的内部保持在真空气氛下并通过向容纳在反应管内的基板供给成膜气体而进行成膜处理的方法包括：执行 通过将保持多个基板的基板保持器保持在反应管中，相对于基板的成膜工艺; 从反应管中进行基板保持器; 并将冷却夹具装入反应管中以冷却反应管的内壁，以便通过热应力剥离附着在反应管内壁上的薄膜，并将薄膜收集在冷却夹具中 通过热泳。