公开(公告)号：US06679118B1

公开(公告)日：2004-01-20

申请号：US10019126

申请日：2002-06-18

申请人： Masayoshi Esashi ,  Takao Murakoshi ,  Shigeru Nakamura ,  Nobuo Takeda

发明人： Masayoshi Esashi ,  Takao Murakoshi ,  Shigeru Nakamura ,  Nobuo Takeda

IPC分类号： G01P15125

CPC分类号： G01P15/125 ,  G01P15/131 ,  G01P15/18

摘要： An object is to provide an accelerometer or a spherical sensor-type measurement device, able to control by means of an active restraining control system a spherical mass part or a spherical sensor part. The accelerometer or spherical sensor-type measurement device has a spherical mass part, which is levitated by electrostatic supporting forces, and electrodes positioned so as to surround the spherical mass part and which have spherical inner surfaces; the above electrodes include a plurality of electrostatic supporting electrodes, positioned symmetrically with respect to the spherical mass part, and a displacement detection electrode, positioned between the electrostatic supporting electrodes.

摘要翻译： 目的是提供一种加速度计或球形传感器型测量装置，其能够通过主动约束控制系统来控制球形质量部分或球形传感器部分。 加速度计或球面传感器型测量装置具有由静电支撑力悬浮的球形质量部分，以及围绕球形质量部分并且具有球形内表面的电极; 上述电极包括相对于球形质量部分对称定位的多个静电支撑电极和位于静电支撑电极之间的位移检测电极。

公开(公告)号：US5169795A

公开(公告)日：1992-12-08

申请号：US747699

申请日：1991-08-20

申请人： Jun-ichi Nishizawa ,  Nobuo Takeda

发明人： Jun-ichi Nishizawa ,  Nobuo Takeda

IPC分类号： H01L21/28 ,  H01L21/335 ,  H01L21/60 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78

CPC分类号： H01L21/76897 ,  H01L21/28052 ,  H01L21/2815 ,  H01L29/4933 ,  H01L29/66416 ,  H01L29/7722 ,  H01L29/7827

摘要： This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

摘要翻译： 本发明提供了一种具有在半导体衬底的一个主表面上形成的第一主电极的切割型绝缘栅静电感应晶体管，形成在半导体的一个主表面上的U形槽的底部的第二主电极 基板，形成在U形槽的侧壁上并由薄绝缘膜和多晶硅层构成的控制电极以及难熔金属层或难熔金属硅化物层的低电阻电极，其形成在至少部分 的控制电极的多晶硅层的侧壁。

公开(公告)号：US20060050343A1

公开(公告)日：2006-03-09

申请号：US10538980

申请日：2003-01-09

申请人： Ikuo Nishimoto ,  Nobuo Takeda ,  Ichitaroh Satoh

发明人： Ikuo Nishimoto ,  Nobuo Takeda ,  Ichitaroh Satoh

IPC分类号： G06E3/00 ,  G06E1/00

CPC分类号： G03F7/703

摘要： A semiconductor manufacturing station (50) exposes light on a surface area of a spherical semiconductor device or ball (52). A mask pattern generator (56) provides a pattern of light, which undergoes temporal changes to collectively represent an image. The mask pattern generator has an active exposure contour (80) that provides a portion of the overall image. The pattern of light is directed though a lens (62) to the surface area of the semiconductor device. The semiconductor device rotates in relation to the temporal changes in the pattern of light to expose the pattern of light over a portion of a surface area of the semiconductor device. The exposure contour has a narrower center and becomes wider moving away from the center. The exposure contour may have a curvature.

摘要翻译： 半导体制造站（50）在球形半导体器件或球（52）的表面上露出光。 掩模图案发生器（56）提供经历时间变化以统一表示图像的光图案。 掩模图案发生器具有提供整个图像的一部分的主动曝光轮廓（80）。 光的图案通过透镜（62）引导到半导体器件的表面区域。 半导体器件相对于光图案的时间变化而旋转，以在半导体器件的表面区域的一部分上露出光图案。 曝光轮廓具有较窄的中心并且变得越来越远离中心。 曝光轮廓可以具有曲率。

公开(公告)号：US06840683B2

公开(公告)日：2005-01-11

申请号：US10413400

申请日：2003-04-15

申请人： Nobuo Takeda ,  Hiroaki Tsutsui ,  Akio Kawamata

发明人： Nobuo Takeda ,  Hiroaki Tsutsui ,  Akio Kawamata

IPC分类号： G02B6/26 ,  C03B37/16 ,  C03C25/10 ,  G02B6/00 ,  G02B6/38 ,  G02B6/43

CPC分类号： G02B6/3897 ,  G02B6/382 ,  G02B6/3826 ,  G02B6/3849 ,  G02B6/3877 ,  G02B6/43

摘要： A connection structure of a light transfer medium includes: a light transfer medium embedded in a structural body; and a protection tube in which the light transfer medium is inserted. The protection tube is embedded in the structural body at one end portion of the structural body. One end portion of the light transfer medium is inserted into the protection tube such that an end of the one end portion of the light transfer medium is positioned inwardly from one end face of the one end portion of said structural body.

摘要翻译： 光传输介质的连接结构包括：嵌入结构体中的光传输介质; 以及插入光传输介质的保护管。 保护管嵌入结构体的结构体的一端。 将光传输介质的一个端部插入到保护管中，使得光传输介质的一个端部的端部从所述结构体的一个端部的一个端面向内定位。

公开(公告)号：US06509645B2

公开(公告)日：2003-01-21

申请号：US09350125

申请日：1999-07-09

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

IPC分类号： H01L2348

CPC分类号： H01L29/0657 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/065 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/1017 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

摘要： A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane. Spherical bumps constituting a group to be connected to the outside protrude above the spherical semiconductor element such that a predetermined gap is formed between a plane or a spherical surface capable of contacting the spherical bumps and the surface of the spherical semiconductor element. The spherical semiconductor device is connected to various circuit boards or another semiconductor device through the spherical bumps. This affords easy and accurate electrical connections to the outside.

公开(公告)号：US08559018B2

公开(公告)日：2013-10-15

申请号：US12675393

申请日：2008-08-25

申请人： Nobuo Takeda ,  Yasuo Hirose

发明人： Nobuo Takeda ,  Yasuo Hirose

IPC分类号： G01B11/16 ,  G01B11/14 ,  G01N21/00

CPC分类号： G01B11/18 ,  G01D5/35316 ,  G01M5/0033 ,  G01M5/0091 ,  G01M11/083

摘要： A surface layer formed of a composite material is stacked on the surface of a core layer formed of a foam synthetic resin material, and an arrester portion is provided in an interface region between the surface layer and the core layer to prevent the progression of delamination between the surface layer and the core layer. Optical fibers with grating portions are embedded inside the arrester and along the surface layer, and the spectra of reflected light from the optical fibers are compared to detect the occurrence position of a crack between the surface layer and the core layer.

摘要翻译： 由复合材料形成的表面层层叠在由泡沫合成树脂材料形成的芯层的表面上，并且在表面层和芯层之间的界面区域中设置避雷器部分，以防止在层间和芯层之间的分层 表面层和芯层。 具有光栅部分的光纤被嵌入在避雷器内并且沿着表面层，并且比较来自光纤的反射光的光谱以检测表面层和芯层之间的裂纹的发生位置。

公开(公告)号：US20110063626A1

公开(公告)日：2011-03-17

申请号：US12675393

申请日：2008-08-25

申请人： Nobuo Takeda ,  Yasuo Hirose

发明人： Nobuo Takeda ,  Yasuo Hirose

IPC分类号： G01B11/00

CPC分类号： G01B11/18 ,  G01D5/35316 ,  G01M5/0033 ,  G01M5/0091 ,  G01M11/083

摘要： A surface layer (4) formed of a composite material is stacked on the surface (3) of a core layer (2) formed of a foam synthetic resin material, and an arrester portion (5) is provided in an interface region between the surface layer (4) and the core layer (2) to prevent the progression of delamination between the surface layer (4) and the core layer (2). Optical fibers (6a, 6b) with grating portions are embedded inside the arrester (5) and along the surface layer (4), and the spectra (A, B) of reflected light from the optical fibers (6a, 6b) are compared to detect the occurrence position of a crack between the surface layer (4) and the core layer (2).

摘要翻译： 由复合材料形成的表面层（4）层叠在由泡沫合成树脂材料形成的芯层（2）的表面（3）上，并且避雷器部分（5）设置在表面 层（4）和芯层（2），以防止表层（4）和芯层（2）之间的分层进展。 具有光栅部分的光纤（6a，6b）被嵌入在避雷器（5）内并且沿着表面层（4），并且将来自光纤（6a，6b）的反射光的光谱（A，B）与 检测表面层（4）和芯层（2）之间的裂缝的发生位置。

公开(公告)号：US20070083705A1

公开(公告)日：2007-04-12

申请号：US11544914

申请日：2006-10-05

申请人： Masaki Kuwashima ,  Nobuo Takeda ,  Masashi Tsuyama ,  Satoshi Takahashi

发明人： Masaki Kuwashima ,  Nobuo Takeda ,  Masashi Tsuyama ,  Satoshi Takahashi

IPC分类号： G06F13/28

CPC分类号： G06F13/385

摘要： Embodiments of the invention provide an HDD functional test apparatus which can test an HDD in a shorter time by increasing the amount of transfer per command without using a larger memory resource. In one embodiment, a data storage device test apparatus comprises a storage section to store original data; a data generating section which generates transfer data, larger in size than the original data, for each command to a data storage device by repeatedly using the original data; and a transfer section which transfers the generated transfer data to the data storage device.

摘要翻译： 本发明的实施例提供一种HDD功能测试装置，其可以通过在不使用更大的存储器资源的情况下增加每个命令的传送量来在较短时间内测试HDD。 在一个实施例中，数据存储设备测试设备包括：存储部分，用于存储原始数据; 数据生成部，通过重复使用原始数据，生成每个命令大于原始数据的传送数据到数据存储装置; 以及将生成的传送数据传送到数据存储装置的传送部。

公开(公告)号：US5060029A

公开(公告)日：1991-10-22

申请号：US483740

申请日：1990-02-23

申请人： Jun-ichi Nishizawa ,  Nobuo Takeda

发明人： Jun-ichi Nishizawa ,  Nobuo Takeda

IPC分类号： H01L21/28 ,  H01L21/335 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78

CPC分类号： H01L29/66416 ,  H01L21/28052 ,  H01L21/2815 ,  H01L29/4933 ,  H01L29/7722 ,  H01L29/7827

摘要： This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

摘要翻译： 本发明提供了一种具有在半导体衬底的一个主表面上形成的第一主电极的切割型绝缘栅静电感应晶体管，形成在半导体的一个主表面上的U形槽的底部的第二主电极 基板，形成在U形槽的侧壁上并由薄绝缘膜和多晶硅层构成的控制电极以及难熔金属层或难熔金属硅化物层的低电阻电极，其形成在至少部分 的控制电极的多晶硅层的侧壁。

公开(公告)号：US4484207A

公开(公告)日：1984-11-20

申请号：US517381

申请日：1983-07-26

申请人： Jun-ichi Nishizawa ,  Tadahiro Ohmi ,  Nobuo Takeda

发明人： Jun-ichi Nishizawa ,  Tadahiro Ohmi ,  Nobuo Takeda

IPC分类号： H01L29/80 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/205 ,  H01L29/43 ,  H01L29/739 ,  H01L29/161

CPC分类号： H01L29/205 ,  H01L29/432 ,  H01L29/739

摘要： A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap broader than that of the channel region. Such a SIT provides a large current amplification factor, improved frequency characteristics and is suitable for high power operation and for use in semiconductor integrated circuits.

摘要翻译： 通过在栅极和源极区域施加正向偏压来工作的正常或倒置型的异质结静态感应晶体管（SIT），其中源极，漏极和栅极区域中的至少其源极区域和栅极区域 形成有具有比通道区域宽的带隙的材料。 这样的SIT提供了大的电流放大因子，改进的频率特性，并且适用于大功率操作和用于半导体集成电路。