摘要:
A row predecoder receives internal address signals output from address latch circuits and outputs the predecode signals. A spare determination circuit receives address signals and outputs a comparison result with a defective row address stored in advance. A normal row decoder receives a predecode address signal and selects a word line within a corresponding normal memory cell block when a redundancy replacement is not performed, while a redundant row decoder receives a predecode signal and selects a redundant word line within a redundant memory cell block when the redundancy replacement is performed.
摘要:
A semiconductor memory device includes an output control signal generation circuit for generating an output control signal to designate initiation of data output according to an external control signal, and a boosting circuit boosting an external power supply voltage. Each of the plurality of output control circuits generates an output permit signal with the output level of the boosting circuit as the activation level in response to activation of an output control signal. The output permit signals are transmitted to a plurality of output circuits by a corresponding one of a plurality of signal lines. Each of the plurality of output circuits drives the potential of a corresponding output terminal according to a read out data signal and an output permit signal.
摘要:
A memory array block MK of the same structure is arranged in all the memory array regions MA of a DRAM. An IO line control circuit connects the other end of a pair of local signal input/output lines to one end of a pair of global signal input/output lines in an opposite phase or a positive phase in response to one end of the corresponding pair of local signal input/output lines being connected to an even numbered bit line pair of the upper row of memory array region MA or an odd numbered bit line pair of the lower row of memory array region MA. Since the memory array blocks MK in all the memory array region MA have the same structure, a memory cell corresponding to a defective address detected in a BI test can easily be identified.
摘要:
Disclosed is a semiconductor memory device having such a structure that a voltage variation on a bit line does not affect a voltage on another bit line. A gate electrode portion branches and extends laterally from a word line and extends almost in parallel with the bit line. First and second impurity regions of a field effect transistor are formed on regions between adjacent word lines, with the gate electrode portion therebetween. A capacitor electrically connected to the second impurity region is formed to cover the bit lines. Since the capacitor is between adjacent bit lines, no voltage variation on one bit line affects a voltage on the other bit lines.
摘要:
A semiconductor device includes a signal generating circuit that generates an impedance adjustment command signal which indicates at least one of initiation and termination of an impedance adjustment. The semiconductor device outputs an output signal in synchronism with the impedance adjustment command signal.
摘要:
A reagent preparing apparatus for preparing reagent by mixing a concentrated reagent and a diluting liquid and supplying the prepared reagent to a clinical sample measurement apparatus which measures a clinical sample using the supplied reagent, the reagent preparing apparatus comprising: a chamber for mixing the concentrated reagent and the diluting liquid; a liquid quality measurement part for measuring a quality of the diluting liquid; and a controller for controlling a flow of the diluting liquid based on the quality of the diluting liquid measured by the liquid quality measurement part is disclosed.
摘要:
A mobile phone apparatus is provided which can register the settings for a ringing operation when receiving a telephone call depending on the situation. The mobile phone apparatus includes: a communication unit 1 which carries out transmission and receipt of data via a communication network; an output unit 2 for outputting at least one of sound, vibration, light and indication; a storage unit 10 which stores apparatus identification data such as a telephone number for the mobile phone apparatus and various setting information, the storage unit 10 including: an individual information registering unit 11 which registers apparatus identification information on a plurality of other communication apparatuses and individual identification information such as an owner name or user name of each of the plurality of communication apparatuses; a group registering unit 12 which registers some of the plurality of other communication apparatuses registered in the individual information registering unit 11 as a group; and an operation setting unit 20 which sets operation contents of the output unit 2; an input unit 3 for inputting apparatus identification data and/or various setting information; and a display unit 4 for displaying information on transmission and receipt of data and/or various setting information. In this case, the output unit 2 outputs the operation contents set by the operation setting unit 20 when an incoming call signal is received by the communication unit 1.
摘要:
A sampling section (102) is provided for generating a sampling signal (103) by sampling an input signal (101) using a sampling clock (106) which is faster than a data speed of the input signal (101). A waveform shaping section (104) is provided for I) processing (e.g. inverting a pulse) the sampling signal (103), so as to shape a restored digital signal obtained from a pulse of the input signal (101), and II) outputting the restored digital signal as an output signal (105). In this way, it becomes possible to provide: A) a waveform shaping method and a waveform shaping device, each of which is capable of correcting distortion in an input signal by means of a simple method or configuration; B) a waveform shaping program that realizes the waveform shaping method or the waveform shaping device; and C) a recording medium storing therein the waveform shaping program.
摘要:
A semiconductor switching element performs operations of bringing a current path from a power supply to a load into conduction and interrupting the path and is controlled by an operating-mode control circuit so as to operate in a first operating mode in which a conductive operation is shifted to an interrupt operation by using a change in resistance of a first positive-temperature-coefficient thermistor when the temperature of a temperature detection portion increases and reaches a predetermined interrupt temperature, and to be in a second operating mode in which the interrupt operation is shifted to the conductive operation by using a change in resistance of a second positive-temperature-coefficient thermistor when the temperature of the temperature detection portion decreases and reaches a return temperature, which is lower than the interrupt temperature by a predetermined value. Each operating mode is controlled in the state where both positive-temperature-coefficient thermistors are thermally coupled to the temperature detection portion.
摘要:
A packet data communication device has a lower-layer communication tool including at least a first lower-layer portion without an error-detection and retransmission function, and an upper-layer communication tool having both an IrTran-P function and an error-detection and retransmission function. When the first lower-layer portion is used, the upper-layer communication tool performs error-detection and retransmission of arbitrary-length packet data.