公开(公告)号：US10446473B1

公开(公告)日：2019-10-15

申请号：US16250485

申请日：2019-01-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Ding-Lung Chen ,  En-Feng Liu ,  Yu-Cheng Tung

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L29/40 ,  H01L23/48 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device and a method of forming the semiconductor device are provided. The semiconductor device includes a substrate, an interconnection structure, an oxide semiconductor (OS) transistor and a contact structure. The substrate has a first surface and a second surface opposite to the first surface. The interconnection structure is disposed on the first surface, and the oxide semiconductor (OS) transistor is disposed on the second surface. Also, the OS transistor includes a back gate disposed on the second surface of the substrate. The contact structure is formed between the OS transistor and the interconnection structure, and the contact structure is electrically connected to the back gate. The contact structure penetrates through the substrate for electrically connecting the interconnection structure to the OS transistor.

公开(公告)号：US10355019B1

公开(公告)日：2019-07-16

申请号：US16024906

申请日：2018-07-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Ding-Lung Chen ,  Yu-Cheng Tung

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/092 ,  H01L29/786 ,  H01L23/528 ,  H01L29/861

Abstract: A semiconductor device includes a substrate, a first transistor, a first diode structure, and a second diode structure. The first transistor is disposed on the substrate. The first transistor includes a first gate electrode, a first source electrode, and a first drain electrode. The first gate electrode is connected to the substrate by the first diode structure. The first drain electrode is connected to the substrate by the second diode structure. The first diode structure and the second diode structure may be used to improve potential unbalance in the transistor, and operation performance and reliability of the semiconductor device may be enhanced accordingly.

公开(公告)号：US10276476B1

公开(公告)日：2019-04-30

申请号：US15981955

申请日：2018-05-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Ding-Lung Chen ,  En-Feng Liu ,  Yu-Cheng Tung

IPC: H01L23/48 ,  H01L23/52 ,  H01L27/12 ,  H01L29/786 ,  H01L23/522 ,  H01L21/768 ,  H01L29/66 ,  H01L29/40 ,  H01L23/532

Abstract: A semiconductor device and a method of forming the semiconductor device are provided. The semiconductor device includes a substrate, an interconnection structure, an oxide semiconductor (OS) transistor and a contact structure. The substrate has a first surface and a second surface opposite to the first surface. The interconnection structure is disposed on the first surface, and the oxide semiconductor (OS) transistor is disposed on the second surface. Also, the OS transistor includes a back gate disposed on the second surface of the substrate. The contact structure is formed between the OS transistor and the interconnection structure, and the contact structure is electrically connected to the back gate. The contact structure penetrates through the substrate for electrically connecting the interconnection structure to the OS transistor.

公开(公告)号：US10043917B2

公开(公告)日：2018-08-07

申请号：US15059311

申请日：2016-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Shao-Hui Wu ,  Chen-Bin Lin ,  Ding-Lung Chen ,  Chi-Fa Ku

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/426

Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.

公开(公告)号：US20170358491A1

公开(公告)日：2017-12-14

申请号：US15655920

申请日：2017-07-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHIBIAO ZHOU ,  Ding-Lung Chen ,  Xing Hua Zhang

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/423 ,  H01L29/45 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40

CPC classification number: H01L21/76895 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L23/485 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/456 ,  H01L29/66568 ,  H01L29/66659 ,  H01L29/7831

Abstract: A semiconductor transistor device includes a substrate having an active area and a trench isolation region surrounding the active area, a gate oxide layer, a gate, a spacer on a sidewall of the gate, a doping region on one side of the gate, an insulating cap layer covering the gate, the spacer and the doping region, and a redistributed contact layer (RCL) on the insulating cap layer. The RCL extends from the active area to the trench isolation region. A contact plug is disposed above the trench isolation region and is electrically connected to the gate or the doping region through the RCL.

公开(公告)号：US09749567B2

公开(公告)日：2017-08-29

申请号：US14953411

申请日：2015-11-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhibiao Zhou ,  Chen-Bin Lin ,  Ding-Lung Chen

IPC: H04N5/374 ,  H01L31/0352 ,  H01L27/146 ,  H04N9/04

CPC classification number: H04N5/374 ,  H01L27/14667 ,  H01L31/035218 ,  H04N5/3745 ,  H04N9/04

Abstract: An operating method of an image sensor includes the following steps. The image sensor includes at least one pixel unit. The pixel unit includes a photoelectric conversion unit, a first control unit, a capacitor unit, and a sensing unit. The photoelectric conversion unit includes a quantum film photoelectric conversion unit, and the first control unit includes an oxide semiconductor transistor. The capacitor unit is coupled to the first control unit, and the sensing unit is configured to sense signals at a sense point coupled between the first control unit and the sensing unit. The pixel unit is discharged before a readout operation. The capacitor unit is charged by electrons emitted from the photoelectric conversion unit when the photoelectric conversion unit is excited by light. Signals at the sense point are then sensed by the sensing unit.

公开(公告)号：US12027629B2

公开(公告)日：2024-07-02

申请号：US18103505

申请日：2023-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66742

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US11239373B2

公开(公告)日：2022-02-01

申请号：US16942775

申请日：2020-07-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Ding-Lung Chen

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes a dielectric structure, a first source/drain electrode, a second source/drain electrode, an oxide semiconductor layer, a gate dielectric layer, and a first gate electrode. The first source/drain electrode is disposed in the dielectric structure. The oxide semiconductor layer is disposed on the first source/drain electrode in a vertical direction. The second source/drain electrode disposed on the oxide semiconductor layer in the vertical direction. The gate dielectric layer is disposed on the dielectric structure and surrounds the oxide semiconductor layer in a horizontal direction. The gate dielectric layer includes a first portion and a second portion. The first portion is elongated in the horizontal direction. The second portion is disposed on the first portion and elongated in the vertical direction. The first gate electrode is disposed on the first portion of the gate dielectric layer.

公开(公告)号：US20210399133A1

公开(公告)日：2021-12-23

申请号：US16942775

申请日：2020-07-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xiang Li ,  Ding-Lung Chen

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes a dielectric structure, a first source/drain electrode, a second source/drain electrode, an oxide semiconductor layer, a gate dielectric layer, and a first gate electrode. The first source/drain electrode is disposed in the dielectric structure. The oxide semiconductor layer is disposed on the first source/drain electrode in a vertical direction. The second source/drain electrode disposed on the oxide semiconductor layer in the vertical direction. The gate dielectric layer is disposed on the dielectric structure and surrounds the oxide semiconductor layer in a horizontal direction. The gate dielectric layer includes a first portion and a second portion. The first portion is elongated in the horizontal direction. The second portion is disposed on the first portion and elongated in the vertical direction. The first gate electrode is disposed on the first portion of the gate dielectric layer.

公开(公告)号：US20210336059A1

公开(公告)日：2021-10-28

申请号：US17367637

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.