公开(公告)号：US20230018513A1

公开(公告)日：2023-01-19

申请号：US17952327

申请日：2022-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yen Tseng ,  Shu-Ru Wang ,  Yu-Tse Kuo ,  Chang-Hung Chen ,  Yi-Ting Wu ,  Shu-Wei Yeh ,  Ya-Lan Chiou ,  Chun-Hsien Huang

IPC: H01L27/22 ,  H01L43/02

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

公开(公告)号：US10607981B2

公开(公告)日：2020-03-31

申请号：US16101528

申请日：2018-08-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shu-Wei Yeh ,  Chang-Hung Chen

IPC: H01L27/02 ,  G11C11/412 ,  H01L27/11 ,  G11C11/417 ,  G11C8/16

Abstract: The present invention provides a layout pattern of a static random access memory (SRAM), comprising at least one substrate, two SRAM units on the substrate, respectively located in a first region and a second region which is adjacent to the first region. Each of the SRAM units includes a first inverter coupled to a second inverter and configured to form a latching circuit, the first inverter includes a first pull-up transistor (PU1) and a first pull-down transistor (PD1), the second inverter includes a second pull-up transistor (PU2) and a second pull-down transistor (PD2). A dummy layer crossing the first a region and the second region, and between the PD1 in the first region and the PD1 in the second region, and a contact structure on the dummy layer, electrically connected to a voltage source Vss.

公开(公告)号：US20190206879A1

公开(公告)日：2019-07-04

申请号：US15884063

申请日：2018-01-30

Applicant: United Microelectronics Corp.

Inventor： Chun-Hsien Huang ,  Ching-Cheng Lung ,  Yu-Tse Kuo ,  Chang-Hung Chen ,  Shu-Ru Wang ,  Wei-Chi Lee ,  Chun-Yen Tseng

IPC: H01L27/11 ,  H01L27/092 ,  G11C11/41 ,  H01L23/522 ,  H01L27/02

Abstract: A semiconductor device includes a first circuit structure and a second circuit structure. The first circuit structure has a first line terminal. The second circuit structure has a second line terminal. The first line terminal and the second line terminal are formed in a first circuit layer but separated by a gap. A conductive structure is forming in a second circuit layer above or below the first circuit layer, to electrically connect the first line terminal and the second line terminal.

公开(公告)号：US12063791B2

公开(公告)日：2024-08-13

申请号：US17952327

申请日：2022-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yen Tseng ,  Shu-Ru Wang ,  Yu-Tse Kuo ,  Chang-Hung Chen ,  Yi-Ting Wu ,  Shu-Wei Yeh ,  Ya-Lan Chiou ,  Chun-Hsien Huang

IPC: H10B61/00 ,  H10N50/80

CPC classification number: H10B61/22 ,  H10N50/80

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

公开(公告)号：US11943935B2

公开(公告)日：2024-03-26

申请号：US17952337

申请日：2022-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yen Tseng ,  Shu-Ru Wang ,  Yu-Tse Kuo ,  Chang-Hung Chen ,  Yi-Ting Wu ,  Shu-Wei Yeh ,  Ya-Lan Chiou ,  Chun-Hsien Huang

IPC: H10B61/00 ,  H10N50/80

CPC classification number: H10B61/22 ,  H10N50/80

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

公开(公告)号：US11502088B2

公开(公告)日：2022-11-15

申请号：US17163571

申请日：2021-02-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Chi Lee ,  Shu-Wei Yeh ,  Chang-Hung Chen

IPC: H01L27/11 ,  H01L21/8238 ,  H01L27/092

Abstract: A layout pattern of static random access memory at least includes a substrate, a plurality of fin structures on the substrate, a plurality of gate structures on the substrate and spanning the fin structures to form a plurality of transistors distributed on the substrate, the plurality of transistors include, a first pull-up transistor PU1, a first pull-down transistor PD1, a second pull-up transistor PU2, a second pull-down transistor PD2, a first pass gate transistor PG1, a second pass gate transistor PG2, a first read transistor RPD and a second read transistor RPG, and an additional fin structure, the additional fin structure is located between the fin structure of the first pass gate transistor PG1 and the fin structure of the second read transistor RPG.

公开(公告)号：US10978122B1

公开(公告)日：2021-04-13

申请号：US16796953

申请日：2020-02-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yen Tseng ,  Yu-Tse Kuo ,  Chang-Hung Chen ,  Shu-Ru Wang ,  Ya-Lan Chiou ,  Chun-Hsien Huang ,  Chih-Wei Tsai ,  Hsin-Chih Yu ,  Yi-Ting Wu ,  Cheng-Tung Huang ,  Jen-Yu Wang ,  Jhen-Siang Wu ,  Po-Chun Yang ,  Yung-Ching Hsieh ,  Jian-Jhong Chen ,  Bo-Chang Li

IPC: G11C11/00 ,  G11C11/16 ,  H01L27/22

Abstract: A memory includes (n−1) non-volatile cells, (n−1) bit lines and a current driving circuit. Each of the (n−1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n−1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n−1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n−1) non-volatile cells.

公开(公告)号：US10276446B1

公开(公告)日：2019-04-30

申请号：US15976848

申请日：2018-05-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Chi Lee ,  Han-Tsun Wang ,  Chang-Hung Chen ,  Po-Yu Yang ,  Mei-Ying Fan ,  Mu-Kai Tsai ,  Guan-Shyan Lin ,  Tsz-Hui Kuo ,  Cheng-Hsiung Chen

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/11

Abstract: An inverter structure includes a first fin structure and a second fin structure respectively disposed within a P-type transistor region and an N-type transistor region on a substrate. A gate line is disposed on the substrate. A first end of the gate line is within the P-type transistor region, and a second end of the gate line is within the N-type transistor region. Two dummy gate lines are disposed at two sides of the gate line. Each dummy gate line has a third end within the P-type transistor region, and a fourth end within the N-type transistor region. A distance between the first end and the first fin structure is greater than a distance between the third end and the first fin structure. The distance between the second end and the second fin structure is smaller than a distance between the fourth end and the second fin structure.