公开(公告)号：US10056490B1

公开(公告)日：2018-08-21

申请号：US15496000

申请日：2017-04-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  I-Cheng Hu ,  Chun-Jen Chen ,  Tien-I Wu ,  Yu-Shu Lin ,  Chun-Yuan Wu

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/10 ,  H01L21/762 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/31116 ,  H01L21/762 ,  H01L21/76205 ,  H01L21/76224 ,  H01L21/823487 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/1029 ,  H01L29/7851 ,  H01L29/7853

Abstract: A semiconductor device includes: a fin-shaped structure on a substrate, in which a sidewall of the fin-shaped structure comprises a curve. Specifically, the fin-shaped structure includes a top portion and a bottom portion, a shallow trench isolation (STI) around the bottom portion of the fin-shaped structure, and the curve includes a planar portion extending from the top surface of fin-shaped structure downward and a curved portion extending from the bottom surface of the fin-shaped structure upward.

公开(公告)号：US20180158943A1

公开(公告)日：2018-06-07

申请号：US15890303

申请日：2018-02-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Kuan Hsuan KU ,  I-Cheng Hu ,  Chueh-Yang Liu ,  Shui-Yen Lu ,  Yu Shu LIN ,  Chun Yao YANG ,  Yu-Ren Wang ,  Neng-Hui Yang

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/165 ,  H01L29/06 ,  H01L21/225 ,  H01L21/768 ,  H01L21/311 ,  H01L27/092

CPC classification number: H01L29/78 ,  H01L21/31144 ,  H01L21/76877 ,  H01L27/0922 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.

公开(公告)号：US09722030B1

公开(公告)日：2017-08-01

申请号：US15175045

申请日：2016-06-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Shiou Hsieh ,  Chun-Yao Yang ,  Shi-You Liu ,  Rong-Sin Lin ,  Han-Ting Yen ,  Yi-Wei Chen ,  I-Cheng Hu ,  Yu-Shu Lin ,  Neng-Hui Yang

IPC: H01L29/165 ,  H01L29/167 ,  H01L23/528 ,  H01L23/532 ,  H01L21/265 ,  H01L21/324 ,  H01L21/768 ,  H01L27/088

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/2257 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/283 ,  H01L21/324 ,  H01L21/76877 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53252 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.