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    Rotating Disk Reactor With Ferrofluid Seal For Chemical Vapor Deposition
    11.
    发明申请
    Rotating Disk Reactor With Ferrofluid Seal For Chemical Vapor Deposition 审中-公开

    公开(公告)号：US20170096734A1

    公开(公告)日：2017-04-06

    申请号：US15382216

    申请日：2016-12-16

    Applicant: Veeco Instruments Inc.

    Inventor： Louise S. Barriss ,  Richard A. Comunale ,  Roger P. Fremgen ,  Alexander I. Gurary ,  Todd A. Luse ,  Robert White Milgate ,  John D. Pollock

    IPC: C23C16/458 ,  H01L21/687 ,  C23C16/46

    Abstract: A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shall so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

    Self-cleaning shutter for CVD reactor
    12.
    发明授权
    Self-cleaning shutter for CVD reactor 有权
    用于CVD反应器的自清洁快门

    公开(公告)号：US09388493B2

    公开(公告)日：2016-07-12

    申请号：US13736439

    申请日：2013-01-08

    Applicant: Veeco Instruments Inc.

    Inventor： Chenghung Paul Chang ,  Keng Moy ,  Alexander I. Gurary

    IPC: C23C16/44 ,  C23C16/458

    CPC classification number: C23C16/4407 ,  C23C16/4409 ,  C23C16/4585

    Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.

    Abstract translation: 提供化学气相沉积反应器和晶片处理方法。 反应器可以包括具有内部和用于插入和移除基板的入口的反应室，与室的内部连通的气体入口歧管，用于允许工艺气体以在保持在内部的基板上形成沉积物，快门安装 并且安装在腔室内的一个或多个清洁元件。 快门可以在（i）清洁元件远离排气通道的行进位置和（ii）清洁位置之间移动，其中一个或多个清洁元件与快门接合，使得清洁元件去除沉积的颗粒 从快门移动到快门到清洁位置。

    CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION
    14.
    发明申请
    CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION 有权
    化学蒸气沉积与高温气体注入

    公开(公告)号：US20150056790A1

    公开(公告)日：2015-02-26

    申请号：US14533650

    申请日：2014-11-05

    Applicant: Veeco Instruments Inc.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

    IPC: H01L21/02

    CPC classification number: H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

    Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

    Abstract translation: 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

    SELF-CLEANING SHUTTER FOR CVD REACTOR
    15.
    发明申请
    SELF-CLEANING SHUTTER FOR CVD REACTOR 有权
    用于CVD反应器的自清洁快门

    公开(公告)号：US20140190405A1

    公开(公告)日：2014-07-10

    申请号：US13736439

    申请日：2013-01-08

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： Chenghung Paul Chang ,  Keng Moy ,  Alexander I. Gurary

    IPC: B05C11/00

    CPC classification number: C23C16/4407 ,  C23C16/4409 ,  C23C16/4585

    Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.

    Abstract translation: 提供化学气相沉积反应器和晶片处理方法。 反应器可以包括具有内部和用于插入和移除基板的入口的反应室，与室的内部连通的气体入口歧管，用于允许工艺气体以在保持在内部的基板上形成沉积物，快门安装 并且安装在腔室内的一个或多个清洁元件。 快门可以在（i）清洁元件远离排气通道的行进位置和（ii）清洁位置之间移动，其中一个或多个清洁元件与快门接合，使得清洁元件去除沉积的颗粒 从快门移动到快门到清洁位置。

    TEMPERATURE CONTROL FOR GaN BASED MATERIALS
    16.
    发明申请
    TEMPERATURE CONTROL FOR GaN BASED MATERIALS 有权
    基于GaN的材料的温度控制

    公开(公告)号：US20130343426A1

    公开(公告)日：2013-12-26

    申请号：US13801357

    申请日：2013-03-13

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Guray Tas

    IPC: G01J5/02

    CPC classification number: G01J5/0007 ,  G01J5/02 ,  G01J5/602

    Abstract: A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

    Abstract translation: 对于诸如化学气相沉积反应器的晶片处理反应器的现场温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并且使旋转轴线内的晶片支撑元件旋转在反应器内的步骤。 该方法理想地还包括当晶片支撑元件围绕旋转轴线旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计获得第一操作温度测量值，并且使用晶片获得第一晶片温度测量值 温度测量装置，其接收来自至少一个晶片的辐射，所述晶片温度测量装置位于第一位置。

    Rotating Disk Reactor with Split Substrate Carrier
    18.
    发明申请
    Rotating Disk Reactor with Split Substrate Carrier 有权

    公开(公告)号：US20220243325A1

    公开(公告)日：2022-08-04

    申请号：US17717679

    申请日：2022-04-11

    Applicant: Veeco Instruments, Inc.

    Inventor： Sandeep Krishnan ,  Alexander I. Gurary ,  Yuliy Rashkovsky ,  Robert Scott Maxwell IV ,  Aniruddha Bagchi

    IPC: C23C16/458 ,  H01L21/673 ,  H01L21/687

    Abstract: A self-centering split substrate carrier that supports a semiconductor substrate in a CVD system includes a first section configured to be centrally located in the split substrate carrier having a top surface with a recessed area for receiving a substrate for CVD processing and comprising a plurality of apertures positioned in an outer surface. A second section formed in a ring-shape having an inner surface configured to receive the first section and an outer surface configured to interface with an edge drive rotation mechanism that rotates the substrate carrier. The inner surface comprising a plurality of boss structures, wherein a respective one of the plurality of boss structures on the inner surface of the second section is configured to fit into a respective one of the plurality of apertures positioned in the outer surface of the first section, so as to improve alignment of the first and the second section of the self-centering split substrate carrier.

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