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公开(公告)号：US20240203683A1
公开(公告)日：2024-06-20
申请号：US18504438
申请日：2023-11-08
IPC分类号： H01J37/147
CPC分类号： H01J37/147
摘要： An in situ cleansing of grids of an ion beam system, such as a deposition and/or etching system, that includes applying a negative bias on the downstream-most grid and etching redeposited material from the grid. Any or all of the chamber pressure of the system, the extraction current in the ion beam source, the beam divergence, and perveance can be adjusted with the deceleration grid bias. The methods of this disclosure can be applied to any gridded ion source systems, including those with an assist ion beam.
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公开(公告)号：US20240175133A1
公开(公告)日：2024-05-30
申请号：US18519548
申请日：2023-11-27
IPC分类号： C23C16/458 , C23C16/455 , C30B25/10 , C30B25/12 , C30B25/14
CPC分类号： C23C16/4584 , C23C16/45502 , C23C16/45565 , C23C16/4586 , C30B25/10 , C30B25/12 , C30B25/14
摘要： A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body that can be configured as a gas exhaust or a gas injection port, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.
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公开(公告)号：US11342215B2
公开(公告)日：2022-05-24
申请号：US15960075
申请日：2018-04-23
IPC分类号： H01L21/687 , H01L21/67 , B08B3/02 , H01L21/683 , B08B3/14 , H01L21/673
摘要： A housing of a wafer processing system includes at least one chamber exhaust outlet and at least one chemical exhaust outlet. The chamber exhaust outlet is formed in the housing for venting gas from the interior of the housing and the chemical exhaust outlet is formed in the housing for venting gas that flows along at least one of: (a) a first flow path defined between the splash shield in a raised position and the collection trays in the lowered position; and (b) a second flow path in which the gas flows through the collection chamber to the chemical exhaust outlet.
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公开(公告)号：US20210202272A1
公开(公告)日：2021-07-01
申请号：US17117762
申请日：2020-12-10
发明人： John Taddei , Kenji Nulman , Jonathan Fijal , Phillip Tyler , Ian Rafter
摘要： A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.
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公开(公告)号：US20210172053A1
公开(公告)日：2021-06-10
申请号：US16997782
申请日：2020-08-19
摘要： An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth s of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of l o the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.
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公开(公告)号：USD908103S1
公开(公告)日：2021-01-19
申请号：US29680874
申请日：2019-02-20
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公开(公告)号：USD893088S1
公开(公告)日：2020-08-11
申请号：US29656586
申请日：2018-07-13
设计人： Premkumar Suhandira Viran , Hao Chen , Joe Lamb
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公开(公告)号：USD866491S1
公开(公告)日：2019-11-12
申请号：US29641924
申请日：2018-03-26
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公开(公告)号：US20190295880A1
公开(公告)日：2019-09-26
申请号：US15936023
申请日：2018-03-26
IPC分类号： H01L21/687 , C23C16/458
摘要： A wafer carrier as described and claimed herein includes a thermal cover and a plurality of platforms with corresponding radially inner and outer pedestals.
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10.发明授权公开(公告)号：US10167571B2
公开(公告)日：2019-01-01
申请号：US13840164
申请日：2013-03-15
IPC分类号： C30B25/12 , B23P19/04 , H01L21/687 , C23C16/458
摘要： A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.
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