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公开(公告)号：US08367464B2
公开(公告)日：2013-02-05
申请号：US13209809
申请日：2011-08-15
申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/00
CPC分类号： H01L45/1233 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
摘要翻译： 一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元 具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。
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公开(公告)号：US20120153400A1
公开(公告)日：2012-06-21
申请号：US12971393
申请日：2010-12-17
CPC分类号： H01L27/115 , B82Y10/00 , H01L29/66977
摘要： A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.
摘要翻译： 一种晶体管，包括一个源极; 排水 栅极区域，所述栅极区域包括栅极; 一个岛屿; 和栅极氧化物，其中所述栅极氧化物位于所述栅极和岛之间; 门和岛彼此共同耦合; 源极屏障和漏极阻挡层，其中源极栅极将源极与栅极区域隔离，并且漏极栅极将漏极与栅极区域分离。
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公开(公告)号：US20120149183A1
公开(公告)日：2012-06-14
申请号：US13400364
申请日：2012-02-20
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/329
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
摘要翻译： 一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属接触形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触， 第二结和第三结是欧姆接触。
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公开(公告)号：US20110300687A1
公开(公告)日：2011-12-08
申请号：US13209809
申请日：2011-08-15
申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/02
CPC分类号： H01L45/1233 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
摘要翻译： 一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元 具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。
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公开(公告)号：US07911833B2
公开(公告)日：2011-03-22
申请号：US12501796
申请日：2009-07-13
申请人： Nurul Amin , Insik Jin , Venugopalan Vaithyanathan , Wei Tian , YoungPil Kim
发明人： Nurul Amin , Insik Jin , Venugopalan Vaithyanathan , Wei Tian , YoungPil Kim
IPC分类号： G11C11/36
CPC分类号： H01L27/224 , G11C11/1659 , G11C13/0007 , G11C13/0011 , H01L27/1021
摘要： An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.
摘要翻译： 目前公开了一种反并联二极管结构和制造方法。 在一些实施例中，反并联二极管结构具有包括设置在第一半导体层和第二半导体层之间的第一绝缘体层的半导体区域。 半导体区域可以通过第一金属材料在第一侧上结合并且通过第二金属材料在第二侧上结合，使得防止低于预定值的电流通过半导体区域，并且超过预定值的电流通过 半导体区域。
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公开(公告)号：US20100123210A1
公开(公告)日：2010-05-20
申请号：US12272912
申请日：2008-11-18
IPC分类号： H01L29/861
CPC分类号： H01L45/00
摘要： A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.
摘要翻译： 具有参考电压电极，可变电压电极和电极之间的二极管材料的二极管。 二极管材料由至少一个高K电介质材料形成，并且在参考电压电极和可变电压电极之间具有不对称能量势垒，其中能量势垒具有靠近参考电压电极的相对最大的能量势垒级别，并且最小值 靠近可变电压电极的能量级别。
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公开(公告)号：US08421048B2
公开(公告)日：2013-04-16
申请号：US12501689
申请日：2009-07-13
申请人： Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
发明人： Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
CPC分类号： G11C13/02 , G11C13/0007 , G11C2213/31 , G11C2213/34 , G11C2213/54 , G11C2213/55 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/144 , H01L45/146
摘要： An example memory cell may have at least a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region can have at least an active interface region disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the active interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.
摘要翻译： 示例性存储单元可以具有布置在导电区域和金属区域之间的至少一个隧道区域，其中隧道区域可以具有至少一个设置在第一隧道势垒和第二隧道势垒之间的有源界面区域。 响应于写入电流而在存储单元编程到选定的电阻状态，在界面区域中形成高电阻膜，使离子从金属和导电区域两次迁移。
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公开(公告)号：US08158964B2
公开(公告)日：2012-04-17
申请号：US12502221
申请日：2009-07-13
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
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公开(公告)号：US20110006276A1
公开(公告)日：2011-01-13
申请号：US12502221
申请日：2009-07-13
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L45/00 , H01L29/868 , H01L21/30
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
摘要翻译： 一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属触点，形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触， 第二结和第三结是欧姆接触。
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公开(公告)号：US20120199936A1
公开(公告)日：2012-08-09
申请号：US13445351
申请日：2012-04-12
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L29/868
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
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