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11.发明申请公开(公告)号：US20220367099A1
公开(公告)日：2022-11-17
申请号：US17878388
申请日：2022-08-01
Applicant: Western Digital Technologies, Inc.
Inventor： Zhitao DIAO , Christian KAISER , Yuankai ZHENG
Abstract: A magnetic element includes a first free layer, a barrier layer over the first free layer, and a second free layer over the barrier layer. The first free layer includes a first ferromagnetic bilayer and a first amorphous insertion layer (e.g., CoHf) between the first ferromagnetic bilayer. The first ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. The second free layer includes a second ferromagnetic bilayer and a second amorphous insertion layer (e.g., CoHf) between the second ferromagnetic bilayer. The second ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. Each of the first and the second amorphous insertion layer independently can be ferromagnetic or non-ferromagnetic and can have a recrystallization temperature of about 300° C. and above. The magnetic element can further include a non-ferromagnetic amorphous buffer layer and/or a non-ferromagnetic amorphous capping layer. The magnetic element can further include a ferromagnetic amorphous seed layer.
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12.发明申请公开(公告)号：US20220093305A1
公开(公告)日：2022-03-24
申请号：US17185797
申请日：2021-02-25
Applicant: Western Digital Technologies, Inc.
Inventor： Zhitao DIAO , Christian KAISER , Yuankai ZHENG
Abstract: A magnetic element includes a first free layer, a barrier layer over the first free layer, and a second free layer over the barrier layer. The first free layer includes a first ferromagnetic bilayer and a first amorphous insertion layer (e.g., CoHf) between the first ferromagnetic bilayer. The first ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. The second free layer includes a second ferromagnetic bilayer and a second amorphous insertion layer (e.g., CoHf) between the second ferromagnetic bilayer. The second ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. Each of the first and the second amorphous insertion layer independently can be ferromagnetic or non-ferromagnetic and can have a recrystallization temperature of about 300° C. and above. The magnetic element can further include a non-ferromagnetic amorphous buffer layer and/or a non-ferromagnetic amorphous capping layer. The magnetic element can further include a ferromagnetic amorphous seed layer.
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13.发明申请公开(公告)号：US20210063500A1
公开(公告)日：2021-03-04
申请号：US16728514
申请日：2019-12-27
Applicant: Western Digital Technologies, Inc.
Inventor： Daniele MAURI , Alexander M. ZELTSER , Goncalo BAIAO DE ALBUQUERQUE , Yuankai ZHENG , Christian KAISER
Abstract: Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.
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Patent Agency Ranking
公开(公告)号：US20210057638A1
公开(公告)日：2021-02-25
申请号：US16730771
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Ronghui ZHOU , Ming MAO , Ming JIANG , Yuankai ZHENG , Chen-jung CHIEN , Yung-Hung WANG , Chih-Ching HU
Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.
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15.发明公开公开(公告)号：US20240107893A1
公开(公告)日：2024-03-28
申请号：US17951596
申请日：2022-09-23
Applicant: Western Digital Technologies, Inc.
Inventor： Susumu OKAMURA , James Mac FREITAG , Yuankai ZHENG , Brian R. YORK
CPC classification number: H01L43/08 , G01R33/093 , G11B5/3909 , G11C11/161 , H01F10/325 , H01F10/3272 , H01L27/222 , H01L43/10 , G11B2005/3996
Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.
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公开(公告)号：US20210255256A1
公开(公告)日：2021-08-19
申请号：US16794100
申请日：2020-02-18
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO
Abstract: The present disclosure generally relates to a tunnel magnetoresistive (TMR) device. The TMR device includes a high radiation reflective layer between the bottom shield of the TMR device and the magnetic seed layer. The high radiation reflective layer helps to maintain the TMR device temperature during transportation between processing chambers. Additionally, the high radiation reflective layer decreases the resistance area (RA) of the TMR device while also increasing the magnetoresistance (MR) of the TMR device.
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公开(公告)号：US20210063509A1
公开(公告)日：2021-03-04
申请号：US16730784
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yung-Hung WANG , Daniele MAURI , Ming MAO , Chen-jung CHIEN , Yuankai ZHENG , Chih-Ching HU , Carlos CORONA , Matthew STEVENSON , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
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公开(公告)号：US20210063508A1
公开(公告)日：2021-03-04
申请号：US16730777
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching HU , Yung-Hung WANG , Yuankai ZHENG , Chen-jung CHIEN , Ming MAO , Daniele MAURI , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.
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