Electrostatic dissipative composite material
    12.
    发明申请
    Electrostatic dissipative composite material 审中-公开
    静电消散复合材料

    公开(公告)号:US20070152195A1

    公开(公告)日:2007-07-05

    申请号:US11324153

    申请日:2005-12-30

    IPC分类号: H01B1/12

    摘要: A method of forming an electrostatic dissipative composite material includes preparing a mixture comprising a polyamic acid precursor and a non-carbonaceous resistivity modifier. The polyamic acid precursor reacts to form polyamic acid. The method also includes dehydrating the polyamic acid to form polyimide. The polyimide forms a polymer matrix in which the non-carbonaceous resistivity modifier is dispersed.

    摘要翻译: 形成静电耗散复合材料的方法包括制备包含聚酰胺酸前体和非碳质电阻率改性剂的混合物。 聚酰胺酸前体反应形成聚酰胺酸。 该方法还包括使聚酰胺酸脱水以形成聚酰亚胺。 聚酰亚胺形成其中非碳质电阻率改性剂分散的聚合物基质。

    PROCESS OF CLEANING A SUBSTRATE FOR MICROELECTRONIC APPLICATIONS INCLUDING DIRECTING MECHANICAL ENERGY THROUGH A FLUID BATH AND APPARATUS OF SAME
    13.
    发明申请
    PROCESS OF CLEANING A SUBSTRATE FOR MICROELECTRONIC APPLICATIONS INCLUDING DIRECTING MECHANICAL ENERGY THROUGH A FLUID BATH AND APPARATUS OF SAME 审中-公开
    清洗用于微电子应用的基板的方法,其中包括通过流体槽的指向机械能量及其装置

    公开(公告)号:US20080257380A1

    公开(公告)日:2008-10-23

    申请号:US12104188

    申请日:2008-04-16

    IPC分类号: C25F3/30

    摘要: An apparatus of cleaning a workpiece for microelectronic applications can include fixture to help position the workpiece. In one aspect the apparatus can include a tank and a transducer. In another aspect the apparatus can include a nozzle. The fixture, the tank, the nozzle, or any combination thereof can include an electrostatic dissipative material having a volume resistivity Rv not less than 1E5 ohm-cm and not greater than 1E11 ohm-cm. In a particular embodiment, a process of cleaning includes directing mechanical energy through a fluid to help overcome energy binding a contaminant to the workpiece.

    摘要翻译: 用于微电子应用的清洁工件的装置可以包括用于帮助定位工件的固定装置。 在一个方面,装置可以包括罐和换能器。 在另一方面,装置可以包括喷嘴。 固定装置,罐,喷嘴或其任何组合可以包括体积电阻率R 1不小于1E5欧姆 - 厘米且不大于1E11欧姆 - 厘米的静电耗散材料。 在特定实施例中,清洁过程包括引导机械能通过流体以帮助克服将污染物结合到工件上的能量。

    Highly filled thermoplastic composites
    14.
    发明申请
    Highly filled thermoplastic composites 失效
    高填充热塑性复合材料

    公开(公告)号:US20080042107A1

    公开(公告)日:2008-02-21

    申请号:US11507062

    申请日:2006-08-18

    IPC分类号: H01B1/12

    摘要: A composite material including a thermoplastic polymer matrix and a non-carbonaceous resistivity modifier dispersed in the thermoplastic polymer matrix. The composite material has a surface resistivity of about 1.0×104 ohm/sq to about 1.0×1011 ohm/sq and at least a portion of a surface of the composite material has a surface roughness (Ra) not greater than about 500 nm.

    摘要翻译: 一种复合材料,包括分散在热塑性聚合物基质中的热塑性聚合物基质和非碳质电阻率改性剂。 复合材料具有约1.0×10 4欧姆/平方至约1.0×10 11欧姆/平方的表面电阻率,复合材料表面的至少一部分具有 表面粗糙度(Ra)不大于约500nm。

    LTD resistant, high strength zirconia ceramic
    16.
    发明授权
    LTD resistant, high strength zirconia ceramic 失效
    LTD耐高强度氧化锆陶瓷

    公开(公告)号:US6069103A

    公开(公告)日:2000-05-30

    申请号:US933716

    申请日:1997-09-19

    申请人: Oh-Hun Kwon

    发明人: Oh-Hun Kwon

    摘要: This invention relates to a densified zirconia ceramic partially stabilized by between 3.8 mol % and 4.4 mol % yttria, wherein the ceramic has a flexural strength of at least 900 MPa after immersion in liquid water having a temperature of 250.degree. C. for 48 hours in an autoclave.

    摘要翻译: 本发明涉及通过3.8mol%至4.4mol%氧化钇部分稳定的致密化氧化锆陶瓷,其中该陶瓷在浸入温度为250℃的液态水中48小时后的弯曲强度为至少900MPa 高压灭菌器

    Disk substrate
    17.
    发明授权
    Disk substrate 失效
    磁盘基板

    公开(公告)号:US5916655A

    公开(公告)日:1999-06-29

    申请号:US722183

    申请日:1996-10-16

    申请人: Oh-Hun Kwon

    发明人: Oh-Hun Kwon

    摘要: The present invention relates to a highly smooth zirconia-containing disk substrate produced by polishing a defect-free surface with fine diamond and/or alumina.

    摘要翻译: PCT No.PCT / US95 / 04325 Sec。 371日期1996年10月16日第 102(e)日期1996年10月16日PCT提交1995年4月18日PCT公布。 WO95 / 28703 PCT出版物 日期1995年10月26日本发明涉及通过用金刚石和/或氧化铝抛光无缺陷表面而生产的高度平滑的含氧化锆的盘基片。

    Thermal Shock-Tolerant Solid Oxide Fuel Cell Stack
    19.
    发明申请
    Thermal Shock-Tolerant Solid Oxide Fuel Cell Stack 有权
    耐热耐冲击固体氧化物燃料电池堆栈

    公开(公告)号:US20100178589A1

    公开(公告)日:2010-07-15

    申请号:US12648949

    申请日:2009-12-29

    IPC分类号: H01M2/14 H01M8/02

    摘要: A solid oxide fuel cell (SOFC) includes a plurality of subassemblies. Each subassembly includes at least one subcell of a first electrode, a second electrode and an electrolyte between the first and second electrodes. A first bonding layer is at the second electrode and an interconnect layer is at the first bonding layer distal to the electrolyte. A second bonding layer that is compositionally distinct from the first bonding layer is at the interconnect layer, whereby the interconnect partitions the first and second bonding layers. A method of fabricating a fuel cell assembly includes co-firing at least two subassemblies using a third bonding layer that is microstructurally or compositionally distinct from the second bonding layer.

    摘要翻译: 固体氧化物燃料电池(SOFC)包括多个子组件。 每个子组件包括第一电极,第二电极和第一和第二电极之间的电解质的至少一个子电池。 第一接合层位于第二电极处,并且互连层位于远离电解质的第一接合层处。 与第一接合层成分不同的第二接合层位于互连层,由此互连部分分隔第一和第二接合层。 一种制造燃料电池组件的方法包括使用在微结构或组成上不同于第二接合层的第三接合层共烧发至少两个子组件。

    ELECTROSTATIC DISSIPATIVE STAGE AND EFFECTORS FOR USE IN FORMING LCD PRODUCTS
    20.
    发明申请
    ELECTROSTATIC DISSIPATIVE STAGE AND EFFECTORS FOR USE IN FORMING LCD PRODUCTS 审中-公开
    用于形成液晶产品的静电消散阶段和效果

    公开(公告)号:US20080259236A1

    公开(公告)日:2008-10-23

    申请号:US12101686

    申请日:2008-04-11

    IPC分类号: G02F1/133 B05D5/00 B05D5/12

    CPC分类号: H01L27/1214 H01L21/68757

    摘要: A process for producing a liquid crystal display (LCD) is provided that includes placing a glass substrate on a stage, and subjecting the glass substrate to at least one processing operation of a plurality of processing operations for forming an array of electronic devices on the glass substrate. The stage being electrostatic discharge dissipative and having a surface portion that has a volume resistivity (Rv) within a range between about 1E5 Ωcm and about 1E11 Ωcm.

    摘要翻译: 提供了一种用于制造液晶显示器(LCD)的方法,其包括将玻璃基板放置在平台上,并对玻璃基板进行至少一个处理操作,所述处理操作用于在玻璃上形成电子器件阵列 基质。 该阶段是静电放电耗散并且具有体积电阻率(R bias v)在约1E5Ωm至约1E11Ωm之间的范围内的表面部分。