摘要:
The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type, body regions of a second conductivity type plurally formed on a surface layer portion of the semiconductor layer at an interval, a source region of the first conductivity type formed on a surface layer portion of each body region, a gate insulating film provided on the semiconductor layer to extend between the body regions adjacent to each other, a gate electrode provided on the gate insulating film and opposed to the body regions, and a field relaxation portion provided between the body regions adjacent to each other for relaxing an electric field generated in the gate insulating film.
摘要:
An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an acetylene or olefin structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要:
A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches.
摘要:
A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein at least one of R1 to R6 is a substituent, and the remaining R1 to R6 are a hydrogen atom.
摘要:
A compound for an organic thin film transistor having a structure shown by the following formula (1): X1-L-Ar-L-X2 (1) wherein L is —C≡C—, or —CH═CH— in a trans configuration, X1 and X2 are independently an alkyl group having 2 to 30 carbon atoms or a haloalkyl group having 1 to 30 carbon atoms, and Ar is a substituted or unsubstituted aromatic hydrocarbon group having 14 to 60 ring carbon atoms which is a condensed ring of three or more rings, or a substituted or unsubstituted aromatic heterocyclic group having 11 to 60 ring atoms which is a condensed ring of three or more rings.
摘要:
A contact has at least one contact portion adapted to contact a first connecting object and a connection portion to be connected to a second connecting object. The contact is provided with an protruded contact portion positioned between the contact portion provided at a free end of the contact and the connection portion and curved and substantially aligned with the contact portion. A member having a pushing portion for pushing the first connecting object is so arranged that the pushing portion is in a position facing to the protruded contact portion. With the contacts thus constructed, even if a great number of the contacts are arranged, large forces are not required for inserting and fitting a connecting object in a connector using the contacts, thereby achieving a stable electrical connection. Moreover, the contacts can be arranged with extremely narrow pitches in a connector, and using the contacts, it is possible to construct reduced overall height connectors, and connectors miniaturized particularly in the inserting direction of a connecting object.
摘要:
An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound having a specified structure; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed (driving speed) and has a large ON/OFF ratio, are provided.
摘要:
An organic electroluminescence device comprising a compound having a specific structure having a heteroatom and an organic electroluminescence device which comprises a cathode, an anode and an organic thin film layer which comprises at least one layer comprising at least a light emitting layer and is disposed between the cathode and the anode, wherein at least one layer in the organic thin film layer comprises the above compound. The device provides excellent efficiency of light emission, forms no defects in pixels, exhibits excellent heat resistance and has a long life.
摘要:
A material for organic electroluminescence devices comprising a compound having a specific structure and an organic electroluminescence device comprising an organic thin film layer which comprises one layer or a plurality of layers comprising at least a light emitting layer and disposed between a cathode and an anode, wherein at least one layer in the organic thin film layer comprises the material for organic electroluminescence devices, are provided. The material provides the organic electroluminescence device exhibiting a great efficiency of light emission, having no defect pixels, exhibiting excellent heat resistance and having a long life.
摘要:
Locking members installed in a housing of a connector each include a first piece having at one end an engaging portion to engage the anchoring portion formed in a flexible printed circuit board, a pressure receiving portion at the other end to be urged by a pivoting member, and a projection inwardly extending from the pressure receiving portion; a second piece having at one end a connection portion connected to a substrate; and a jointing fulcrum portion connecting the first and second pieces. When the engaging portions of the locking members engage the anchoring portions of the circuit board, the second pieces are void of parts facing to the engaging portions. The housing includes notches at positions corresponding to the locking members. The connector achieves further reduced overall height and stable holding force for the circuit board even with less conductors without failed connection.