摘要:
A flat panel X-ray detector, including an X-ray-electric-charge converting film containing a metal halide and serving to convert an incident X-ray into an electric charge, a pair of electrodes formed on both surfaces of the X-ray-electric-charge converting film, and a blocking layer formed in contact with at least one surface of the X-ray-electric-charge converting film and containing a substance selected from the group consisting of a metal oxide, a metal nitride, a metal halide oxide, a first mixture of at least two of these materials, and a second mixture of a metal halide and any of these materials.
摘要:
Signal output of an X-ray-electric conversion layer prevents instability of operation due to variation of a threshold voltage of TFT mounted to read a signal. Pixel electrodes 17 are arranged in an array on the X-ray-electric conversion layer. Variation of the threshold voltage (Vth) is suppressed by applying in compensatory manner a voltage pulse for switch-off having a polarity opposite to an average polarity of a voltage for switch-on at operating period to the gate electrode of a field effect type TFT for pixel switching connected to each pixel electrode to read a signal.
摘要:
A flat panel X-ray detector, including an X-ray-electric-charge converting film containing a metal halide and serving to convert an incident X-ray into an electric charge, a pair of electrodes formed on both surfaces of the X-ray-electric-charge converting film, and a blocking layer formed in contact with at least one surface of the X-ray-electric-charge converting film and containing a substance selected from the group consisting of a metal oxide, a metal nitride, a metal halide oxide, a first mixture of at least two of these materials, and a second mixture of a metal halide and any of these materials.
摘要:
A multi-layered conductor structure device has a substrate, a first conductor layer formed on the substrate, which provides an electrode or wiring, and an insulating film covering the first conductor layer and the substrate. On the insulating film, a second conductor layer is formed which comprises an indium tin oxide, and which provides an electrode or wiring. The first conductor layer is formed of an alloy of aluminum with copper, gold, boron, bismuth, cobalt, chromium, germanium, iron, molybdenum, niobium, nickel, palladium, platinum, tantalum, titanium, tungsten, and/or silver.
摘要:
An X-ray image detector system includes: a plurality of scanning lines; a plurality of signal lines formed so as to intersect the scanning lines; and a plurality of pixel parts, each of which is formed at a corresponding one of the intersections between the scanning lines and the signal lines so as to form an array; each of said pixel parts having an X-ray-to-charge converting part for converting an incident X-ray to an electric charge, a pixel electrode for receiving the electric charge from the X-ray-to-charge converting part, and a switching element which is operated on the basis of a signal of a corresponding one of the scanning lines, one end of the switching element being connected to the pixel electrode, and the other end of the switching element being connected to a corresponding one of the signal lines, wherein the X-ray-to-charge converting part includes at least a first X-ray-to-charge converting film, and a second X-ray-to-charge converting film having a lower resistivity than that of the first X-ray-to-charge converting film. Thus, it is possible to provide an X-ray image detector system capable of detecting an image even if X-ray irradiation is weak.
摘要:
The present invention provides a liquid crystal display device, having light-converging member provided for each pixel or each pixel row consisting of a plurality of pixels for converging the light incident from the outside, first light path converting member for converting the converged light into a parallel light, light separating member for separating the parallel light into its red-, green- and blue-light components, a liquid crystal cell for controlling the transmitting amount of each light component, and control member for controlling the light transmittance of the liquid crystal cell for a plurality of pixels by applying a voltage to the liquid crystal cell.
摘要:
A method of manufacturing a semiconductor device, which comprises steps of providing a substrate, forming an oxide layer of a metal material, which includes a tantalum or an alloy mainly containing a tantalum on the substrate, placing the substrate into a first chamber, activating an etching gas which includes a fluorine containing gas and an oxygen containing gas, in a second chamber, introducing the activated etching gas into the second chamber, and etching the oxide layer by the introduced gas selectively against the substrate. A method of manufacturing a liquid crystal display device, which comprises steps of providing a substrate, forming an anodic oxide layer of a tantalum containing material on the substrate, forming an etching mask on the anodic oxide layer, placing the substrate into a first region, activating a mixture of fluorine and oxygen containing gas in a second region, apart from the first region, introducing the activated etching gas into the first region through a gas introducing portion, and etching the oxide layer on the substrate selectively against the substrate, by using the etching mask.
摘要:
An X-ray flat panel detector includes an X-ray photosensitive film which generates signal charges upon being exposed to incident X-rays, pixel electrodes which are arrayed in contact with the X-ray photosensitive film, a bias voltage application unit which applies a bias voltage to the X-ray photosensitive film so as to make the pixel electrodes collect holes or electrons, which serve as the signal charges generated by the X-ray photosensitive film and have a higher mobility, capacitors which are arranged in correspondence with the pixel electrodes and store the charges generated by the X-ray photosensitive film, switching thin-film transistors which are arranged in correspondence with the pixel electrodes and read the charges in the capacitors, scanning lines which supply a control signal to OPEN/CLOSE-control the switching thin-film transistors, and signal lines which are connected to the switching thin-film transistors to read the charges when the switching thin-film transistors are opened.
摘要:
An image detecting device has a large dynamic range that deals with a plurality of image detecting modes. The image detecting device is composed of pixels e (i, j) arranged in a matrix array. Each pixel has a photoelectric element. In each pixel, a capacitor 102 and a protecting diode 103 are disposed. The capacitor 102 stores electric charge corresponding to the intensity of penetrated light to the relevant pixel. The protecting diode limits the capacitance. A bias voltage is supplied to the protecting diode 103 through a bias line Bias. The bias voltage is adjusted by a bias voltage controlling system 133 corresponding to the frame rate. Thus, the influence of a leak current in the off-state of the protecting diode 103 can be alleviated against electric charge stored in the capacitor 102. Consequently, an image with a high S/N ratio can be obtained regardless of the frame rate.
摘要:
An active matrix liquid crystal panel includes a plurality of thin film transistors respectively arranged adjacent to pixel electrodes, and a plurality of auxiliary capacitances. Each transistor has a semiconductor active layer, a pair of source and drain electrodes, and a gate electrode opposing the active layer via a gate insulating film. Each auxiliary capacitance has upper and lower electrodes, and a dielectric layer sandwiched between the upper and lower electrodes. The gate electrode, the lower electrode, and an address line respectively have portions formed of a common refractory metal film arranged on the insulating surface of a support substrate. The source and drain electrodes, the upper electrode, and a signal line respectively have portions formed of a common Mo film. Each pixel electrode has a portion formed of an ITO film. Each auxiliary capacitance further has an intervening layer between the dielectric layer and the upper electrode. The intervening layer has a portion formed of a semiconductor film common to the active layer of the transistor.