利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

69 条记录 (耗时 0.029 秒)

    Flat panel x-ray detector
    1.
    发明申请
    Flat panel x-ray detector 失效
    平板X射线探测器

    公开(公告)号：US20050253077A1

    公开(公告)日：2005-11-17

    申请号：US11052799

    申请日：2005-02-09

    申请人： Mitsushi Ikeda ,  Masaki Atsuta ,  Toshiyuki Oka ,  Kenichi Mori ,  Akira Kinno

    发明人： Mitsushi Ikeda ,  Masaki Atsuta ,  Toshiyuki Oka ,  Kenichi Mori ,  Akira Kinno

    IPC分类号： G01T1/24 ,  H01L27/146 ,  H01L31/032 ,  H01L31/115

    CPC分类号： H01L27/14676 ,  H01L31/032 ,  H01L31/115

    摘要： A flat panel X-ray detector, including an X-ray-electric-charge converting film containing a metal halide and serving to convert an incident X-ray into an electric charge, a pair of electrodes formed on both surfaces of the X-ray-electric-charge converting film, and a blocking layer formed in contact with at least one surface of the X-ray-electric-charge converting film and containing a substance selected from the group consisting of a metal oxide, a metal nitride, a metal halide oxide, a first mixture of at least two of these materials, and a second mixture of a metal halide and any of these materials.

    摘要翻译： 一种平板X射线检测器，包括含有金属卤化物并用于将入射的X射线转换成电荷的X射线电荷转换膜，形成在X射线的两个表面上的一对电极 电荷转换膜和与X射线电荷转换膜的至少一个表面接触形成的阻挡层，并且含有选自金属氧化物，金属氮化物，金属 卤化物氧化物，这些材料中的至少两种的第一混合物和金属卤化物和这些材料中的任何一种的第二混合物。

    Flat panel x-ray detector
    2.
    发明授权
    Flat panel x-ray detector 失效
    平板X射线探测器

    公开(公告)号：US07126128B2

    公开(公告)日：2006-10-24

    申请号：US11052799

    申请日：2005-02-09

    申请人： Mitsushi Ikeda ,  Masaki Atsuta ,  Toshiyuki Oka ,  Kenichi Mori ,  Akira Kinno

    发明人： Mitsushi Ikeda ,  Masaki Atsuta ,  Toshiyuki Oka ,  Kenichi Mori ,  Akira Kinno

    IPC分类号： G01J1/24 ,  H01L25/00 ,  H01L27/00

    CPC分类号： H01L27/14676 ,  H01L31/032 ,  H01L31/115

    摘要： A flat panel X-ray detector, including an X-ray-electric-charge converting film containing a metal halide and serving to convert an incident X-ray into an electric charge, a pair of electrodes formed on both surfaces of the X-ray-electric-charge converting film, and a blocking layer formed in contact with at least one surface of the X-ray-electric-charge converting film and containing a substance selected from the group consisting of a metal oxide, a metal nitride, a metal halide oxide, a first mixture of at least two of these materials, and a second mixture of a metal halide and any of these materials.

    摘要翻译： 一种平板X射线检测器，包括含有金属卤化物并用于将入射的X射线转换成电荷的X射线电荷转换膜，形成在X射线的两个表面上的一对电极 电荷转换膜和与X射线电荷转换膜的至少一个表面接触形成的阻挡层，并且含有选自金属氧化物，金属氮化物，金属 卤化物氧化物，这些材料中的至少两种的第一混合物和金属卤化物和这些材料中的任何一种的第二混合物。

    Flat panel X-ray detector
    3.
    发明授权
    Flat panel X-ray detector 失效
    平板X射线探测器

    公开(公告)号：US07115878B2

    公开(公告)日：2006-10-03

    申请号：US10728901

    申请日：2003-12-08

    申请人： Mitsushi Ikeda ,  Toshiyuki Oka ,  Mutsuki Yamazaki ,  Masaki Atsuta ,  Akira Kinno

    发明人： Mitsushi Ikeda ,  Toshiyuki Oka ,  Mutsuki Yamazaki ,  Masaki Atsuta ,  Akira Kinno

    IPC分类号： G01T1/24

    CPC分类号： G21K4/00 ,  H01L27/14659

    摘要： A flat panel X-ray detector which includes an X-ray-charge conversion film converting incident X-rays into electric charges, and a pair of electrodes disposed in contact with both surfaces of the X-ray-charge conversion film The X-ray-charge conversion film has a laminate structure including a plurality of metal halide films differing in band gap from one another and laminated along direction of c-axis of hexagonal crystal structure, and halogen atoms contained in the plurality of metal halide films are of the same kind among them.

    摘要翻译： 一种平板X射线检测器，其包括将入射的X射线转换为电荷的X射线电荷转换膜和与X射线电荷转换膜的两个表面接触的一对电极.X射线 充电转换膜具有层叠结构，其包括彼此不同的带隙并且沿六方晶体结构的c轴方向层叠的多个金属卤化物膜，并且多个金属卤化物膜中包含的卤素原子相同 在他们中间。

    X-ray imaging device
    4.
    发明申请
    X-ray imaging device 审中-公开
    X射线成像装置

    公开(公告)号：US20060237647A1

    公开(公告)日：2006-10-26

    申请号：US11414483

    申请日：2006-05-01

    申请人： Mitsushi Ikeda ,  Akira Kinno ,  Toshiyuki Oka

    发明人： Mitsushi Ikeda ,  Akira Kinno ,  Toshiyuki Oka

    IPC分类号： G02F1/01

    CPC分类号： H04N5/357 ,  H01L27/14609 ,  H01L27/14676 ,  H04N5/32 ,  H04N5/378

    摘要： Signal output of an X-ray-electric conversion layer prevents instability of operation due to variation of a threshold voltage of TFT mounted to read a signal. Pixel electrodes 17 are arranged in an array on the X-ray-electric conversion layer. Variation of the threshold voltage (Vth) is suppressed by applying in compensatory manner a voltage pulse for switch-off having a polarity opposite to an average polarity of a voltage for switch-on at operating period to the gate electrode of a field effect type TFT for pixel switching connected to each pixel electrode to read a signal.

    摘要翻译： X射线电转换层的信号输出防止由于安装的TFT的阈值电压的变化而读取信号而导致的操作不稳定。 像素电极17以X射线电转换层的阵列排列。 通过以补偿的方式施加具有与操作周期的接通电压的平均极性相反的极性的关断电压脉冲来抑制阈值电压（V SUB）的变化， 用于像素切换的场效应TFT的栅电极连接到每个像素电极以读取信号。

    Liquid crystal display device
    6.
    发明授权
    Liquid crystal display device 失效
    液晶显示装置

    公开(公告)号：US5821622A

    公开(公告)日：1998-10-13

    申请号：US633346

    申请日：1996-04-17

    申请人： Yoshiko Tsuji ,  Mitsushi Ikeda ,  Hisao Toeda ,  Yoshifumi Ogawa ,  Toshiyuki Oka

    发明人： Yoshiko Tsuji ,  Mitsushi Ikeda ,  Hisao Toeda ,  Yoshifumi Ogawa ,  Toshiyuki Oka

    IPC分类号： G02F1/136 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458 ,  G02F2001/136295 ,  H01L2924/0002

    摘要： The present invention provides a liquid crystal display device including a plurality of address wiring lines formed of an Mo--W alloy, a plurality of data wiring lines intersecting the address wiring lines, with insulating films interposed at intersection portions of the data wiring lines and the address wiring lines, display regions having pixel electrodes arranged respectively for the intersection portions, and a plurality of switching elements provided adjacent to the intersection portions and having control electrodes connected electrically to the address wiring lines, first main electrodes connected electrically to the data wiring liens, and second main electrodes connected electrically to the pixel electrodes.

    摘要翻译： 本发明提供一种液晶显示装置，包括由Mo-W合金形成的多条地址布线，与地址布线相交的多条数据布线，绝缘膜夹在数据布线和 地址布线，具有分别为交叉部分布置的像素电极的显示区域以及与该交点相邻设置的多个开关元件，并具有与地址布线电连接的控制电极，与数据布线留置片电连接的第一主电极 和与像素电极电连接的第二主电极。

    ANISOTROPIC CONDUCTIVE FILM, X-RAY FLAT PANEL DETECTOR, INFRARED FLAT PANEL DETECTOR AND DISPLAY DEVICE
    7.
    发明申请
    ANISOTROPIC CONDUCTIVE FILM, X-RAY FLAT PANEL DETECTOR, INFRARED FLAT PANEL DETECTOR AND DISPLAY DEVICE 审中-公开
    各向异性导电膜，X射线平板检测器，红外平板检测器和显示器件

    公开(公告)号：US20070181816A1

    公开(公告)日：2007-08-09

    申请号：US11669299

    申请日：2007-01-31

    申请人： Mitsushi Ikeda ,  Toshiyuki Oka

    发明人： Mitsushi Ikeda ,  Toshiyuki Oka

    IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L25/00 ,  G01J5/20 ,  H01L27/146

    CPC分类号： H01L27/14676 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14669 ,  H01L31/02161

    摘要： An anisotropic conductive film includes: an insulating material; and a plurality of conductive particles dispersed in the insulating material, the conductive particles provided in a plurality of lines in a first direction along the thickness of the insulating material, the conductive particles in the lines disposed electrically connectable to each other, and the conductive particles in different lines disposed apart from each other in a second direction perpendicular to the first direction.

    摘要翻译： 各向异性导电膜包括：绝缘材料; 以及分散在所述绝缘材料中的多个导电粒子，所述导电粒子沿着所述绝缘材料的厚度沿着第一方向设置在多条线上，所述导体粒子彼此电连接地设置，所述导电粒子 在垂直于第一方向的第二方向上彼此分离的不同的线。

    Semiconductor light emitting device
    8.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08643044B2

    公开(公告)日：2014-02-04

    申请号：US13222912

    申请日：2011-08-31

    申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

    Semiconductor light emitting device and method for manufacturing the same
    9.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08314437B2

    公开(公告)日：2012-11-20

    申请号：US12874425

    申请日：2010-09-02

    申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

    摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

    摘要翻译： 某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层 氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中 形成n电极。