摘要:
A nonvolatile semiconductor memory device with a plurality of read modes switchably built therein is provided. This nonvolatile semiconductor memory device is the one that has a memory cell array in which electrically rewritable nonvolatile memory cells are laid out and a read circuit which performs data readout of the memory cell array. The nonvolatile semiconductor memory device has a first read mode and a second read mode. The first read mode is for reading data by means of parallel data transfer of the same bit number when sending data from the memory cell array through the read circuit up to more than one external terminal. The second read mode is for performing parallel data transfer of a greater bit number than that of the first read mode when sending data from the memory cell array to the read circuit while performing data transfer of a smaller bit number than the bit number when sending data from the read circuit up to the external terminal.
摘要:
A semiconductor memory device comprises memory cell array, a sense amp, and a reference voltage generator. The reference voltage generator includes a reference cell unit containing a reference cell to flow a reference current and a first current source load to supply a current to the reference cell; a reference transistor unit containing a reference transistor to flow a current reflecting the reference current and a second current source load to supply a current to the reference transistor; a control amp for negative feedback control of the reference transistor; a current source transistor; and a third current source load connected to a reference sense line.
摘要:
A semiconductor integrated circuit device includes first to fourth bit lines and a redundant bit line, first to fourth column gate transistors and a redundant column gate transistor coupled to each of the first to fourth bit lines and the redundant bit lines, first to fourth column select lines and a redundant column select line coupled to each of the first to fourth column gate transistors and the redundant column gate transistor. The second column select line passes through the first bit line. The third column select line passes through the first and second bit lines. The fourth column select line passes through the first, second and third bit lines. The redundant column select line passes through the first, second, third and fourth bit lines.
摘要:
A constant voltage generating circuit comprising following elements is shown: a first constant current generation circuit including a first transistor and a second transistor, configured to generate a first voltage and a first current as determined by an operating point to be determined depending on a difference in threshold voltage between the first and second transistors; a second constant current generation circuit configured to generate a second current proportional to said first current; and a voltage generation circuit including a third transistor having its gate and drain connected together, configured to generate a second voltage when letting said second current flow in said third transistor.
摘要:
A semiconductor integrated circuit includes first to eighth column selection transistors and ninth to twelfth column selection transistors. The ninth column selection transistor is connected to the first and second column selection transistors. The tenth column selection transistor is connected to the third and fourth column selection transistors. The eleventh column selection transistor is connected to the fifth and sixth column selection transistors. The twelfth column selection transistor is connected to the seventh and eighth column selection transistors. A first column selection line is connected to gates of the first, third, fifth and seventh column selection transistors. A second column selection line is connected to gates of the second, fourth, sixth and eighth column selection transistors. Third to sixth column selection lines are connected to gates of the ninth to twelfth column selection transistors, respectively.
摘要:
A switch controller in a DC--DC converter performs the switching control of a primary switch and a freewheel switch which are connected to the primary and the secondary of a transformer, respectively. The switch controller comprises a control voltage generator for generating two control voltages having a predetermined voltage difference, a triangular-wave oscillator for generating a triangular-wave voltage, and a control pulse generator for generating two control pulse signals which cause the primary switch and the freewheel switch to alternately turn on and off such that both the primary switch and the freewheel switch become off during a certain period when one of the primary switch and the freewheel switch is turned off.
摘要:
A lamp holder 11 is made of white synthetic resin by molding such as injection molding. A reflection sheet 12 made of high-reflectance material such as silver or aluminum has a central portion 12a cut out and is affixed to an inner surface 11a of the lamp holder 11. The light reached the inner surface of the lamp holder 11 of light emitted from a lamp 1 is regularly reflected by the reflection sheet 12 and is diffusively reflected by the cutout portion of the reflection sheet 12. A considerable part of the light reflected on the white surface reaches the vicinity of electrode portions 1a of a discharge tube 1 to enter from an incidence end surface of a light guide in the vicinity of electrode portions 1a. Thus, the difference of light-supplying power between the central portion and the end portions (in the vicinity of the electrode portions 1a) of the lamp is compensated. When the reflection sheet made of a resilient material is used, the reflection sheet can be fixed utilizing the resiliency by putting the reflection sheet along the inner curved surface of the lamp holder. Instead of the reflection sheet, metal (silver or aluminum) may be evaporated on the inner surface of the lamp holder.
摘要:
An operation unit includes a case and an operation member molded integrally through injection molding. The operation member includes an outer surface and a slide portion supported by the case. The slide portion is slidable and movable relative to the case. The operation member further includes a knob operated by an operator, a parting line formed continuously from the slide portion to the knob along the outer surface, and a ridge line formed on the outer surface. At least part of the parting line is formed along the ridge line.
摘要:
A semiconductor memory device is disclosed which includes an array of memory cells for storing data depending on whether current pull-in is present or absent or alternatively whether it is large or small, a plurality of sense lines with read data of the memory cell array transferred thereto, a reference sense line for common use in data sensing at the plurality of sense lines while being given a reference voltage for the data sense, and a sense amplifier array having a plurality of sense amplifiers for amplifying a difference voltage between the plurality of sense lines and the reference sense line to thereby determine read data.
摘要:
A first level shifter outputs one of a first potential and a second potential lower than the first potential from an output terminal in accordance with the level of an input signal. A second level shifter outputs one of the first potential and a third potential lower than the second potential from an output terminal in accordance with the output potential from the first level shifter. A third level shifter outputs one of the first and second potentials from an output terminal in accordance with the level of the input signal. A first switching circuit selects the output voltage from the second level shifter when a high-speed operation is required such as in a read operation.