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    Magnetic random access memory with lower switching field
    11.
    发明授权
    Magnetic random access memory with lower switching field 失效
    具有较低开关电场的磁性随机存取存储器

    公开(公告)号：US07208808B2

    公开(公告)日：2007-04-24

    申请号：US11159137

    申请日：2005-06-23

    申请人： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

    发明人： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

    IPC分类号： H01L29/82 ,  H01L43/00 ,  H01L27/14 ,  H01L29/84 ,  H01L31/111

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

    摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.

    摘要翻译： 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

    Magnetic random access memory with lower switching field through indirect exchange coupling
    12.
    发明申请
    Magnetic random access memory with lower switching field through indirect exchange coupling 审中-公开
    磁性随机存取存储器通过间接交换耦合具有较低的开关电场

    公开(公告)号：US20060138509A1

    公开(公告)日：2006-06-29

    申请号：US11155465

    申请日：2005-06-20

    申请人： Yuan-Jen Lee ,  Yung-Hung Wang ,  Lien-Chang Wang ,  Ming-Jer Kao

    发明人： Yuan-Jen Lee ,  Yung-Hung Wang ,  Lien-Chang Wang ,  Ming-Jer Kao

    IPC分类号： H01L27/108

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3281

    摘要： A magnetic random access memory with lower switching field through indirect exchange coupling. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, a metal layer formed on the ferromagnetic free layer, and a second antiferromagnetic layer formed on the metal layer. The anisotropy axis of the second antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged in parallel. The net magnetic moment of the antiferromagnetic layer interface between the second antiferromagnetic layer and the metal layer is close to zero. The memory has the advantages of lowering the switching field of the ferromagnetic layer and lowering the writing current.

    摘要翻译： 通过间接交换耦合的具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁性层上的被钉扎层，形成在钉扎层上的隧道阻挡层，形成在隧道势垒层上的铁磁自由层，形成在铁磁自由层上的金属层，以及 形成在金属层上的第二反铁磁层。 第二反铁磁性层和铁磁性层的各向异性轴与铁磁性层的各向异性轴平行排列。 第二反铁磁层与金属层之间的反铁磁层界面的净磁矩接近零。 存储器具有降低铁磁层的开关场和降低写入电流的优点。

    Magnetic random access memory with lower switching field
    13.
    发明申请
    Magnetic random access memory with lower switching field 失效
    具有较低开关电场的磁性随机存取存储器

    公开(公告)号：US20060102971A1

    公开(公告)日：2006-05-18

    申请号：US11159137

    申请日：2005-06-23

    申请人： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

    发明人： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

    IPC分类号： H01L43/00 ,  H01L29/82 ,  G11C11/22

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

    摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.

    摘要翻译： 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

    Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
    16.
    发明申请
    Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins 有权
    利用具有增强的读和写余量的这样的单元使用自旋转移和磁存储的磁存储单元的电流驱动切换

    公开(公告)号：US20070297223A1

    公开(公告)日：2007-12-27

    申请号：US11476171

    申请日：2006-06-26

    申请人： Eugene Youjun Chen ,  Yiming Huai ,  Alex Fischer Panchula ,  Lien-Chang Wang ,  Xiao Luo

    发明人： Eugene Youjun Chen ,  Yiming Huai ,  Alex Fischer Panchula ,  Lien-Chang Wang ,  Xiao Luo

    IPC分类号： G11C11/15

    CPC分类号： G11C11/16

    摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

    摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。

    High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors
    17.
    发明申请
    High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors 审中-公开
    利用环形晶体管的自旋转移磁存储器的高密度磁存储单元布局

    公开(公告)号：US20070279967A1

    公开(公告)日：2007-12-06

    申请号：US11436446

    申请日：2006-05-18

    申请人： Xiao Luo ,  Lien-Chang Wang

    发明人： Xiao Luo ,  Lien-Chang Wang

    IPC分类号： H01L29/76 ,  H01L29/94 ,  G11C11/00 ,  G11C11/14 ,  H01L31/00

    CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L29/4238

    摘要： A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.

    摘要翻译： 描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。 该方法和系统包括提供磁性元件并提供选择装置。 磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。 选择装置与磁性元件连接。 选择装置包括其中具有孔的门。 选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。

    Method and system for providing current balanced writing for memory cells and magnetic devices
    18.
    发明授权
    Method and system for providing current balanced writing for memory cells and magnetic devices 有权
    为存储器单元和磁性器件提供电流平衡写入的方法和系统

    公开(公告)号：US07187577B1

    公开(公告)日：2007-03-06

    申请号：US11286083

    申请日：2005-11-23

    申请人： Lien-Chang Wang ,  Zhitao Diao ,  Yunfei Ding

    发明人： Lien-Chang Wang ,  Zhitao Diao ,  Yunfei Ding

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

    摘要翻译： 包括提供磁存储器的方法和系统。 该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。 所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。 磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。 选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

    Structure and method for redeposition free thin film CPP read sensor fabrication
    19.
    发明授权
    Structure and method for redeposition free thin film CPP read sensor fabrication 失效
    无沉积薄膜CPP读取传感器制造的结构和方法

    公开(公告)号：US06833979B1

    公开(公告)日：2004-12-21

    申请号：US10176874

    申请日：2002-06-21

    申请人： Kenneth E. Knapp ,  Ronald A. Barr ,  Lien-Chang Wang ,  Benjamin P. Law ,  James Spallas

    发明人： Kenneth E. Knapp ,  Ronald A. Barr ,  Lien-Chang Wang ,  Benjamin P. Law ,  James Spallas

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49155

    摘要： The present invention provides an improved current perpendicular to the plane thin film read head device and method of fabrication. With the present invention, the lower lead is formed to inhibit accumulation of redeposited lead material on CPP sensor element side walls during CPP sensor formation. In the preferred embodiment, the upper portion of the lower lead, which normally is etched during sensor element formation, is formed of a low sputter yield material to reduce redeposition flux to the sensor side walls. It is also preferred to form the upper portion of a material that also has a low value for the ratio of its sputter yield at the lead milling angle-to-its sputter yield at the side wall milling angle to inhibit redeposition accumulation on the side wall. It is preferred to clad conventional lead material with a low sputter yield ratio, low resistivity material, to inhibit side wall redeposition accumulation while also providing a low resistance lower lead. The underlying lead material may be formed of conventional low resistance lead materials with a cladding of a refractory metal, such as tantalum, titanium, tungsten, molybdenum, zirconium, vanadium, niobium, their alloys, or the like. The improved CPP read head of the present invention may be embodied in a data storage and retrieval apparatus.

    摘要翻译： 本发明提供一种垂直于平面薄膜读取头装置的改进的电流和制造方法。 利用本发明，形成下引线以在CPP传感器形成期间抑制再沉积的铅材料在CPP传感器元件侧壁上的积聚。 在优选实施例中，通常在传感器元件形成期间被蚀刻的下引线的上部由低溅射成品材料形成，以减少对传感器侧壁的再沉积通量。 还优选形成材料的上部，其在侧铣削角处的铅铣削角与其溅射产率之间的溅射产率的比值也低，以抑制侧壁上的再沉积积聚 。 优选以低的溅射成品率的低电阻率材料包覆常规的铅材料，以抑制侧壁再沉积积聚，同时还提供低电阻的低铅。 下面的铅材料可以由具有诸如钽，钛，钨，钼，锆，钒，铌，它们的合金等的难熔金属包层的常规低电阻引线材料形成。 本发明的改进的CPP读取头可以体现在数据存储和检索装置中。