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    Structure and method for redeposition free thin film CPP read sensor fabrication
    1.
    发明授权
    Structure and method for redeposition free thin film CPP read sensor fabrication 失效
    无沉积薄膜CPP读取传感器制造的结构和方法

    公开(公告)号：US06833979B1

    公开(公告)日：2004-12-21

    申请号：US10176874

    申请日：2002-06-21

    申请人： Kenneth E. Knapp ,  Ronald A. Barr ,  Lien-Chang Wang ,  Benjamin P. Law ,  James Spallas

    发明人： Kenneth E. Knapp ,  Ronald A. Barr ,  Lien-Chang Wang ,  Benjamin P. Law ,  James Spallas

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49155

    摘要： The present invention provides an improved current perpendicular to the plane thin film read head device and method of fabrication. With the present invention, the lower lead is formed to inhibit accumulation of redeposited lead material on CPP sensor element side walls during CPP sensor formation. In the preferred embodiment, the upper portion of the lower lead, which normally is etched during sensor element formation, is formed of a low sputter yield material to reduce redeposition flux to the sensor side walls. It is also preferred to form the upper portion of a material that also has a low value for the ratio of its sputter yield at the lead milling angle-to-its sputter yield at the side wall milling angle to inhibit redeposition accumulation on the side wall. It is preferred to clad conventional lead material with a low sputter yield ratio, low resistivity material, to inhibit side wall redeposition accumulation while also providing a low resistance lower lead. The underlying lead material may be formed of conventional low resistance lead materials with a cladding of a refractory metal, such as tantalum, titanium, tungsten, molybdenum, zirconium, vanadium, niobium, their alloys, or the like. The improved CPP read head of the present invention may be embodied in a data storage and retrieval apparatus.

    摘要翻译： 本发明提供一种垂直于平面薄膜读取头装置的改进的电流和制造方法。 利用本发明，形成下引线以在CPP传感器形成期间抑制再沉积的铅材料在CPP传感器元件侧壁上的积聚。 在优选实施例中，通常在传感器元件形成期间被蚀刻的下引线的上部由低溅射成品材料形成，以减少对传感器侧壁的再沉积通量。 还优选形成材料的上部，其在侧铣削角处的铅铣削角与其溅射产率之间的溅射产率的比值也低，以抑制侧壁上的再沉积积聚 。 优选以低的溅射成品率的低电阻率材料包覆常规的铅材料，以抑制侧壁再沉积积聚，同时还提供低电阻的低铅。 下面的铅材料可以由具有诸如钽，钛，钨，钼，锆，钒，铌，它们的合金等的难熔金属包层的常规低电阻引线材料形成。 本发明的改进的CPP读取头可以体现在数据存储和检索装置中。

    Structure and method for redeposition free thin film CPP read sensor fabrication
    3.
    发明授权
    Structure and method for redeposition free thin film CPP read sensor fabrication 有权
    无沉积薄膜CPP读取传感器制造的结构和方法

    公开(公告)号：US06433970B1

    公开(公告)日：2002-08-13

    申请号：US09327209

    申请日：1999-06-07

    申请人： Kenneth E. Knapp ,  Ronald A. Barr ,  Lien-Chang Wang ,  Benjamin P. Law ,  James Spallas

    发明人： Kenneth E. Knapp ,  Ronald A. Barr ,  Lien-Chang Wang ,  Benjamin P. Law ,  James Spallas

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49155

    摘要： The present invention provides an improved current perpendicular to the plane thin film read head device and method of fabrication. With the present invention, the lower lead is formed to inhibit accumulation of redeposited lead material on CPP sensor element side walls during CPP sensor formation. In the preferred embodiment, the upper portion of the lower lead, which normally is etched during sensor element formation, is formed of a low sputter yield material to reduce redeposition flux to the sensor side walls. It is also preferred to form the upper portion of a material that also has a low value for the ratio of its sputter yield at the lead milling angle-to-its sputter yield at the side wall milling angle to inhibit redeposition accumulation on the side wall. It is preferred to clad conventional lead material with a low sputter yield ratio, low resistivity material, to inhibit side wall redeposition accumulation while also providing a low resistance lower lead. The underlying lead material may be formed of conventional low resistance lead materials with a cladding of a refractory metal, such as tantalum, titanium, tungsten, molybdenum, zirconium, vanadium, niobium, their alloys, or the like. The improved CPP read head of the present invention may be embodied in a data storage and retrieval apparatus.

    摘要翻译： 本发明提供一种垂直于平面薄膜读取头装置的改进的电流和制造方法。 利用本发明，形成下引线以在CPP传感器形成期间抑制再沉积的铅材料在CPP传感器元件侧壁上的积聚。 在优选实施例中，通常在传感器元件形成期间被蚀刻的下引线的上部由低溅射成品材料形成，以减少对传感器侧壁的再沉积通量。 还优选形成材料的上部，其在侧铣削角处的铅铣削角与其溅射产率之间的溅射产率的比值也低，以抑制侧壁上的再沉积积聚 。 优选以低的溅射成品率的低电阻率材料包覆常规的铅材料，以抑制侧壁再沉积积聚，同时还提供低电阻的低铅。 下面的铅材料可以由具有诸如钽，钛，钨，钼，锆，钒，铌，它们的合金等的难熔金属包层的常规低电阻引线材料形成。 本发明的改进的CPP读取头可以体现在数据存储和检索装置中。

    Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication
    4.
    发明授权
    Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication 有权
    具有改进的偏置磁体与磁阻元件接口和制造方法的薄膜读取头结构

    公开(公告)号：US06487056B1

    公开(公告)日：2002-11-26

    申请号：US10153067

    申请日：2002-05-20

    申请人： Matthew Gibbons ,  Kenneth E. Knapp ,  Ronald A. Barr ,  Benjamin P. Law ,  James Spallas ,  Ming Zhao

    发明人： Matthew Gibbons ,  Kenneth E. Knapp ,  Ronald A. Barr ,  Benjamin P. Law ,  James Spallas ,  Ming Zhao

    IPC分类号： G11B539

    CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer. In CIP and CPP embodiments, tapered portions of the bias material, which form overhanging the MR element, are removed by directional etching to improve the direction and stability of the induced longitudinal field within the MR element. In some CIP embodiments, tapered overhang removal allows for formation of improved lead structures, which may be deposited on the MR element closer to the side walls, and which are not pinched off by the overhang of an underlying bias layer, thus improving current density profile and definition of the actual effective track width of the device.

    摘要翻译： 本发明提供一种改进的偏置磁体 - 磁阻元件接口和制造方法。 在优选实施例中，通过过蚀刻形成与偏置层相对的MR元件的壁/壁，以提供没有锥度的垂直侧壁。 在优选实施例中，在MR元件上形成保护元件以在蚀刻工艺期间保护元件。 在一些实施方案中，在形成偏压层之前沉积填料层。 在CIP实施例中，蚀刻形成在MR元件的垂直侧壁上的填充层的任何部分，以提供暴露的侧壁表面用于连续的偏置层形成。 在CPP实施例中，填充层在垂直后壁上形成，并使MR元件与偏置层电绝缘。 在CIP和CPP实施例中，通过定向蚀刻去除形成悬垂在MR元件上的倾斜材料的锥形部分，以改善MR元件内的感应纵向场的方向和稳定性。 在一些CIP实施例中，锥形突出去除允许形成改进的引线结构，其可以沉积在更靠近侧壁的MR元件上，并且不被下伏偏置层的突出部分夹住，因此改善电流密度分布 以及设备的实际有效轨迹宽度的定义。

    Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication
    5.
    发明授权
    Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication 有权
    具有改进的偏置磁体与磁阻元件接口和制造方法的薄膜读取头结构

    公开(公告)号：US06735850B1

    公开(公告)日：2004-05-18

    申请号：US10152909

    申请日：2002-05-20

    申请人： Matthew Gibbons ,  Kenneth E. Knapp ,  Ronald A. Barr ,  Benjamin P. Law ,  James Spallas ,  Ming Zhao

    发明人： Matthew Gibbons ,  Kenneth E. Knapp ,  Ronald A. Barr ,  Benjamin P. Law ,  James Spallas ,  Ming Zhao

    IPC分类号： G11B5127

    CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer. In CIP and CPP embodiments, tapered portions of the bias material, which form overhanging the MR element, are removed by directional etching to improve the direction and stability of the induced longitudinal field within the MR element. In some CIP embodiments, tapered overhang removal allows for formation of improved lead structures, which may be deposited on the MR element closer to the side walls, and which are not pinched off by the overhang of an underlying bias layer, thus improving current density profile and definition of the actual effective track width of the device.

    摘要翻译： 本发明提供一种改进的偏置磁体 - 磁阻元件接口和制造方法。 在优选实施例中，通过过蚀刻形成与偏置层相对的MR元件的壁/壁，以提供没有锥度的垂直侧壁。 在优选实施例中，在MR元件上形成保护元件以在蚀刻工艺期间保护元件。 在一些实施方案中，在形成偏压层之前沉积填料层。 在CIP实施例中，蚀刻形成在MR元件的垂直侧壁上的填充层的任何部分，以提供暴露的侧壁表面用于连续的偏置层形成。 在CPP实施例中，填充层在垂直后壁上形成，并使MR元件与偏置层电绝缘。 在CIP和CPP实施例中，通过定向蚀刻去除形成悬垂在MR元件上的倾斜材料的锥形部分，以改善MR元件内的感应纵向场的方向和稳定性。 在一些CIP实施例中，锥形突出去除允许形成改进的引线结构，其可以沉积在更靠近侧壁的MR元件上，并且不被下伏偏置层的突出部分夹住，因此改善电流密度分布 以及设备的实际有效轨迹宽度的定义。

    System and method for multiple electron, ion, and photon beam alignment
    9.
    发明授权
    System and method for multiple electron, ion, and photon beam alignment 有权
    用于多电子，离子和光子束对准的系统和方法

    公开(公告)号：US07332729B1

    公开(公告)日：2008-02-19

    申请号：US11160227

    申请日：2005-06-14

    申请人： Lawrence Muray ,  James Spallas

    发明人： Lawrence Muray ,  James Spallas

    IPC分类号： G01N23/00

    CPC分类号： G01N23/225 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/28 ,  H01J37/3045 ,  H01J37/3174

    摘要： A beam column array included alignment marks within to enable alignment of beams with respect to each other. Specifically, the array includes an array of beam columns, each column having at least once lens. A plurality of alignment marks are located beneath the lens. A method of using the array includes: scanning a plurality of beams in a beam column array over a plurality of alignment marks; and determining beam centroid positions of the beams with respect to each other based on data from the scanning.

    摘要翻译： 光束列阵列包括对准标记，以使光束能够相对于彼此对准。 具体来说，该阵列包括一束光束列，每列具有至少一次透镜。 多个对准标记位于透镜下方。 使用阵列的方法包括：在多个对准标记上扫描光束列阵列中的多个光束; 以及基于来自所述扫描的数据来确定所述光束相对于彼此的光束重心位置。