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51 条记录 (耗时 0.027 秒)

    Mask for electromagnetic radiation and method of fabricating the same
    11.
    发明申请
    Mask for electromagnetic radiation and method of fabricating the same 审中-公开
    电磁辐射掩模及其制造方法

    公开(公告)号：US20060134531A1

    公开(公告)日：2006-06-22

    申请号：US11274474

    申请日：2005-11-16

    申请人： I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

    发明人： I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

    IPC分类号： G03C5/00 ,  G21K5/00 ,  G03F1/00

    CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

    摘要： A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.

    摘要翻译： 光刻用掩模及其制造方法。 掩模可以包括基板，由能够在基板上反射电磁射线的材料形成的反射层和形成为期望图案的吸收图案，使得形成相对于电磁射线通过的电磁射线和窗口的吸收区域， 其中所述吸收图案包括与所述窗口相邻并且相对于所述反射层倾斜的至少一个侧表面。 该方法可以包括形成由能够在基板上反射电磁射线的材料形成的反射层，形成由能够在反射层上吸收电磁射线的材料形成的吸收层，以及图案化吸收层以形成 具有与窗口相邻的至少一个侧表面的吸收图案，该窗口具有相对于反射层的倾斜侧表面。

    Semiconductor wafer and method of fabricating the same
    14.
    发明授权
    Semiconductor wafer and method of fabricating the same 有权
    半导体晶片及其制造方法

    公开(公告)号：US07675091B2

    公开(公告)日：2010-03-09

    申请号：US11463137

    申请日：2006-08-08

    申请人： Young-Soo Park ,  Kyoo-Chul Cho ,  Shin-Hyeok Han ,  Tae-Soo Kang

    发明人： Young-Soo Park ,  Kyoo-Chul Cho ,  Shin-Hyeok Han ,  Tae-Soo Kang

    IPC分类号： H01L29/80

    CPC分类号： H01L29/045 ,  H01L21/76251 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78687 ,  H01L29/78696

    摘要： Disclosed is a semiconductor wafer and method of fabricating the same. The semiconductor wafer is comprised of a semiconductor layer formed on an insulation layer on a base substrate. The semiconductor layer includes a surface region organized in a first crystallographic orientation, and another surface region organized in a second crystallographic orientation. The performance of a semiconductor device with unit elements that use charges, which are activated in high mobility to the crystallographic orientation, as carriers is enhanced. The semiconductor wafer is completed by forming the semiconductor layer with the second crystallographic orientation on the plane of the first crystallographic orientation, growing an epitaxial layer, forming the insulation layer on the epitaxial layer, and then bonding the insulation layer to the base substrate.

    摘要翻译： 公开了半导体晶片及其制造方法。 半导体晶片由在基底基板上的绝缘层上形成的半导体层构成。 半导体层包括以第一晶体取向组织的表面区域和以第二晶体取向组织的另一表面区域。 带有单元元件的半导体器件的性能随着载流子的增强而被使用以高结晶取向的高迁移率激活的电荷。 半导体晶片通过在第一晶体取向的平面上形成具有第二晶体取向的半导体层，生长外延层，在外延层上形成绝缘层，然后将绝缘层接合到基底来完成。

    Semiconductor device and method for forming the same
    15.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号：US07573123B2

    公开(公告)日：2009-08-11

    申请号：US11775130

    申请日：2007-07-09

    申请人： Young-Soo Park ,  Kyoo-Chul Cho ,  Hee-Sung Kim ,  Tae-Soo Kang ,  Sam-Jong Choi

    发明人： Young-Soo Park ,  Kyoo-Chul Cho ,  Hee-Sung Kim ,  Tae-Soo Kang ,  Sam-Jong Choi

    IPC分类号： H01L29/04 ,  H01L31/036

    CPC分类号： H01L21/76254 ,  H01L27/1207 ,  H01L27/1211 ,  H01L29/66795

    摘要： Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.

    摘要翻译： 提供半导体器件及其形成方法。 在一个实施例中，半导体器件包括半导体层，第一和第二半导体鳍片，绝缘层和鳍间连接构件。 第一和第二半导体散热片放置在半导体层上，具有不同的晶体方向。 第一半导体鳍状物与半导体层连接，具有与半导体层相同的晶体方向。 绝缘层介于第二半导体鳍片和半导体层之间，并且具有插入第一半导体鳍片的开口。 翅片间连接构件将第一半导体翅片和第二半导体翅片在绝缘层上连接起来。

    Thin film transistor and method of fabricating the same
    16.
    发明申请
    Thin film transistor and method of fabricating the same 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号：US20070252207A1

    公开(公告)日：2007-11-01

    申请号：US11706316

    申请日：2007-02-15

    申请人： Jae-Chul Park ,  Young-Soo Park ,  Young-Kwan Cha

    发明人： Jae-Chul Park ,  Young-Soo Park ,  Young-Kwan Cha

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78618

    摘要： A thin film transistor (TFT) and a method of fabricating the TFT may be provided. The TFT may include a substrate; a channel formed on the substrate; source and drain layers formed on both ends of the channel; a gate insulator covering the source and drain layers and the channel; a gate formed on the gate insulator; an ILD (interlayer dielectric) layer covering the gate; and/or source and drain electrodes contacting the source and drain layers through contact holes formed in the ILD layer and the gate insulator.

    摘要翻译： 可以提供薄膜晶体管（TFT）和制造TFT的方法。 TFT可以包括基板; 形成在基板上的通道; 源极和漏极层形成在通道的两端; 覆盖源极和漏极层和沟道的栅极绝缘体; 形成在栅极绝缘体上的栅极; 覆盖栅极的ILD（层间电介质）层; 和/或通过形成在ILD层和栅极绝缘体中的接触孔与源极和漏极层接触的源极和漏极。

    Apparatus and method for character entry in a portable terminal
    17.
    发明申请
    Apparatus and method for character entry in a portable terminal 有权
    便携式终端中字符输入的装置和方法

    公开(公告)号：US20070229312A1

    公开(公告)日：2007-10-04

    申请号：US11482711

    申请日：2006-07-10

    申请人： Young-Soo Park ,  Seung-Gun Park ,  Gwan-Seok Ko ,  Jae-Gwa Lee

    发明人： Young-Soo Park ,  Seung-Gun Park ,  Gwan-Seok Ko ,  Jae-Gwa Lee

    IPC分类号： H03M11/00

    CPC分类号： G06F3/0236 ,  G06F3/018

    摘要： A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed. When a directional key is pressed, the number or duration of key presses of the directional key is counted or measured. A character corresponding to the number or duration of key presses is selected among the displayed characters and entered.

    摘要翻译： 提供了一种终端中的字符输入方法和装置，其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。 在字符输入方法中，当按下表示代表性字符的键时，显示属于由代表字符表示的字符集的字符。 当按下方向键时，计数或测量方向键的按键数量或持续时间。 在显示的字符中选择对应于按键数量或持续时间的字符并输入。