公开(公告)号：US20120187397A1

公开(公告)日：2012-07-26

申请号：US13356012

申请日：2012-01-23

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC分类号： H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

摘要翻译： 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

公开(公告)号：US20120153395A1

公开(公告)日：2012-06-21

申请号：US13315322

申请日：2011-12-09

申请人： Junichi KOEZUKA ,  Satoshi SHINOHARA ,  Miki SUZUKI ,  Hideto OHNUMA

发明人： Junichi KOEZUKA ,  Satoshi SHINOHARA ,  Miki SUZUKI ,  Hideto OHNUMA

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L27/1288 ,  H01L29/66492 ,  H01L29/78624

摘要： A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

摘要翻译： 提供了一种半导体器件，其包括形成在绝缘表面上并具有源极区，漏极区和沟道形成区的单晶半导体层，覆盖单晶半导体层的栅极绝缘膜和与 沟道形成区域之间插入栅极绝缘膜。 在半导体器件中，源极和漏极区域的至少漏极区域包括与沟道形成区域相邻的第一杂质区域和与第一杂质区域相邻的第二杂质区域。 与深度方向上的第二杂质区域的杂质浓度分布的最大值相比，深度方向上的第一杂质区域的杂质浓度分布的最大值比绝缘面更接近。

公开(公告)号：US20110057183A1

公开(公告)日：2011-03-10

申请号：US12948198

申请日：2010-11-17

申请人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

发明人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

IPC分类号： H01L51/52

CPC分类号： H01L51/5284 ,  H01L51/5052

摘要： The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

摘要翻译： 本发明提供一种具有高对比度的发光元件和发光装置，具体地说，提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层，使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外，在形成有用于驱动发光元件的薄膜晶体管，形成布线的区域等的区域上也形成光吸收层，从而从侧面提取光 与形成TFT的区域相反，从而减少外部光的反射。

公开(公告)号：US20090096054A1

公开(公告)日：2009-04-16

申请号：US12237606

申请日：2008-09-25

申请人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

发明人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78621

摘要： A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a substrate having an insulating surface, and a plurality of stacks over the substrate having an insulating surface. Each of the plurality of stacks includes a bonding layer over the substrate having an insulating surface, an insulating layer over the bonding layer, and a single crystal semiconductor layer over the insulating layer. The substrate having an insulating surface has a depression, and the depression is provided between one of the plurality of stacks and another adjacent one of the plurality of stacks.

摘要翻译： 提供了包括半导体衬底的半导体器件。 半导体衬底包括具有绝缘表面的衬底和在衬底上的多个堆叠，其具有绝缘表面。 多个堆叠中的每一个在基板上包括具有绝缘表面的接合层，接合层上的绝缘层以及绝缘层上的单晶半导体层。 具有绝缘表面的基板具有凹陷，并且凹陷设置在多个叠层中的一个和多个叠层中的另一个相邻的堆叠之间。

公开(公告)号：US20090001879A1

公开(公告)日：2009-01-01

申请号：US12135265

申请日：2008-06-09

申请人： Hisao IKEDA ,  Takahiro IBE ,  Junichi KOEZUKA ,  Kaoru KATO

发明人： Hisao IKEDA ,  Takahiro IBE ,  Junichi KOEZUKA ,  Kaoru KATO

IPC分类号： H01L51/40 ,  H01J1/63

CPC分类号： H01L51/52 ,  H01L27/3283 ,  H01L51/002 ,  H01L51/5052 ,  H01L51/5088 ,  H01L51/5215 ,  H01L2251/5392 ,  H01L2251/558

摘要： The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.

摘要翻译： 本发明提供一种发光装置，其在基板上包括发光元件，所述发光元件通过分隔壁与相邻的发光元件分隔开，所述发光元件包括第一电极，层 形成在第一电极上，形成在该层上的发光层和形成在发光层上的第二电极，该层包含无机化合物，有机化合物和卤素原子，分隔壁包含无机化合物和 有机化合物和层。 发光装置提供更高的可靠性和更少的缺陷。

公开(公告)号：US20140306220A1

公开(公告)日：2014-10-16

申请号：US14246493

申请日：2014-04-07

申请人： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

发明人： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

摘要： To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region.

摘要翻译： 提供控制通道长度减小的新型半导体器件。 半导体器件包括具有晶体部分的氧化物半导体层以及与氧化物半导体层接触的源电极层和漏电极层。 氧化物半导体层包括与源极电极层或漏极电极层接触的沟道形成区域和n型区域。 晶体部分的晶体取向在沟道形成区域和n型区域之间是不同的。

公开(公告)号：US20140306218A1

公开(公告)日：2014-10-16

申请号：US14244419

申请日：2014-04-03

申请人： Junichi KOEZUKA ,  Masahiro KATAYAMA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

发明人： Junichi KOEZUKA ,  Masahiro KATAYAMA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

IPC分类号： H01L27/12 ,  H01L23/00

CPC分类号： H01L27/1225 ,  H01L23/3121 ,  H01L23/564 ,  H01L27/1248 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

摘要： Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

摘要翻译： 晶体管的电特性的变化最小化，晶体管的可靠性提高。 显示装置包括像素部分104和在像素部分外的驱动器电路部分106。 像素部分包括像素晶体管，覆盖像素晶体管并包括无机材料的第一绝缘层122，在第一绝缘层之上并包括有机材料的第二绝缘层124和第三绝缘层128 并且包括无机材料。 驱动器电路部分包括用于向像素晶体管提供信号的驱动晶体管，以及覆盖驱动晶体管的第一绝缘层。 第二绝缘层不形成在驱动电路部分中。

公开(公告)号：US20130075732A1

公开(公告)日：2013-03-28

申请号：US13604962

申请日：2012-09-06

申请人： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Junichi KOEZUKA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Akihiro ISHIZUKA

发明人： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Junichi KOEZUKA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Akihiro ISHIZUKA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A miniaturized transistor having high electric characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity are achieved. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, source and drain electrode layers are provided in contact with the oxide semiconductor film and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive film and an interlayer insulating film are stacked to cover the oxide semiconductor film, the sidewall insulating layers, and the gate electrode layer, and the interlayer insulating film and the conductive film over the gate electrode layer are removed by a chemical mechanical polishing method, so that the source and drain electrode layers are formed.

摘要翻译： 提供具有高电特性的小型化晶体管，其产率高。 在包括晶体管的半导体器件中，实现了高性能，高可靠性和高生产率。 在包括晶体管的半导体器件中，依次堆叠其中设置有侧壁绝缘层的侧表面上的氧化物半导体膜，栅极绝缘膜和栅极电极层的晶体管，源极和漏极电极层被设置为与 氧化物半导体膜和侧壁绝缘层。 在制造半导体器件的过程中，层叠导电膜和层间绝缘膜以覆盖氧化物半导体膜，侧壁绝缘层和栅极电极层，以及栅极上的层间绝缘膜和导电膜 通过化学机械抛光方法去除层，从而形成源极和漏极电极层。

公开(公告)号：US20130069055A1

公开(公告)日：2013-03-21

申请号：US13608044

申请日：2012-09-10

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Hiromachi GODO ,  Takehisa HATANO ,  Sachiaki TEZUKA ,  Suguru HONDO ,  Naoto YAMADE ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Hiromachi GODO ,  Takehisa HATANO ,  Sachiaki TEZUKA ,  Suguru HONDO ,  Naoto YAMADE ,  Junichi KOEZUKA

IPC分类号： H01L29/78

CPC分类号： H01L29/41733 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.

摘要翻译： 提供一种半导体器件，其中提供氧化物半导体层; 设置有栅极电极层的一对布线层电连接到低电阻区域; 并且电极层设置成与低电阻区域接触，在形成布线层的区域之下。

公开(公告)号：US20120244658A1

公开(公告)日：2012-09-27

申请号：US13419468

申请日：2012-03-14

申请人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

发明人： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO

IPC分类号： H01L21/425

CPC分类号： H01L21/425 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

摘要翻译： 提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。 在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤 压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。