公开(公告)号：US20140306218A1

公开(公告)日：2014-10-16

申请号：US14244419

申请日：2014-04-03

申请人： Junichi KOEZUKA ,  Masahiro KATAYAMA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

发明人： Junichi KOEZUKA ,  Masahiro KATAYAMA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

IPC分类号： H01L27/12 ,  H01L23/00

CPC分类号： H01L27/1225 ,  H01L23/3121 ,  H01L23/564 ,  H01L27/1248 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

摘要： Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

摘要翻译： 晶体管的电特性的变化最小化，晶体管的可靠性提高。 显示装置包括像素部分104和在像素部分外的驱动器电路部分106。 像素部分包括像素晶体管，覆盖像素晶体管并包括无机材料的第一绝缘层122，在第一绝缘层之上并包括有机材料的第二绝缘层124和第三绝缘层128 并且包括无机材料。 驱动器电路部分包括用于向像素晶体管提供信号的驱动晶体管，以及覆盖驱动晶体管的第一绝缘层。 第二绝缘层不形成在驱动电路部分中。

公开(公告)号：US20140117350A1

公开(公告)日：2014-05-01

申请号：US14062085

申请日：2013-10-24

申请人： Junichi KOEZUKA ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

发明人： Junichi KOEZUKA ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

IPC分类号： H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/3262

摘要： To improve the reliability of a transistor as well as to inhibit fluctuation in electric characteristics. A display device includes a pixel portion and a driver circuit portion outside the pixel portion; the pixel portion includes a pixel transistor, a first insulating film covering the pixel transistor and including an inorganic material, a second insulating film including an organic material over the first insulating film, and a third insulating film including an inorganic material over the second insulating film; and the driver circuit portion includes a driving transistor to supply a signal to the pixel transistor, the first insulating film covering the driving transistor, and the second insulating film over the first insulating film, and further includes a region in which the third insulating film is not formed over the second insulating film or a region in which the second insulating film is not covered with the third insulating film.

摘要翻译： 提高晶体管的可靠性以及抑制电特性的波动。 显示装置包括像素部分和像素部分外部的驱动器电路部分; 像素部分包括像素晶体管，覆盖像素晶体管并且包括无机材料的第一绝缘膜，在第一绝缘膜上的包括有机材料的第二绝缘膜，以及在第二绝缘膜上的包括无机材料的第三绝缘膜 ; 并且所述驱动电路部分包括驱动晶体管，以向所述像素晶体管提供信号，所述第一绝缘膜覆盖所述驱动晶体管，并且所述第二绝缘膜在所述第一绝缘膜上方，并且还包括所述第三绝缘膜为 不形成在第二绝缘膜上或第二绝缘膜未被第三绝缘膜覆盖的区域。

公开(公告)号：US20140139775A1

公开(公告)日：2014-05-22

申请号：US14077390

申请日：2013-11-12

申请人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

发明人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

IPC分类号： G02F1/1368 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/78648

摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

摘要翻译： 半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

公开(公告)号：US20140306220A1

公开(公告)日：2014-10-16

申请号：US14246493

申请日：2014-04-07

申请人： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

发明人： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Takuya MATSUO ,  Shigeyasu MORI ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78696

摘要： To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region.

摘要翻译： 提供控制通道长度减小的新型半导体器件。 半导体器件包括具有晶体部分的氧化物半导体层以及与氧化物半导体层接触的源电极层和漏电极层。 氧化物半导体层包括与源极电极层或漏极电极层接触的沟道形成区域和n型区域。 晶体部分的晶体取向在沟道形成区域和n型区域之间是不同的。

公开(公告)号：US20130023087A1

公开(公告)日：2013-01-24

申请号：US13547451

申请日：2012-07-12

申请人： Shunpei YAMAZAKI ,  Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA ,  Sachiaki TEZUKA

发明人： Shunpei YAMAZAKI ,  Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA ,  Sachiaki TEZUKA

IPC分类号： H01L21/385 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

摘要翻译： 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

公开(公告)号：US20130020569A1

公开(公告)日：2013-01-24

申请号：US13547119

申请日：2012-07-12

申请人： Shunpei YAMAZAKI ,  Naoto YAMADE ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Naoto YAMADE ,  Junichi KOEZUKA

IPC分类号： H01L29/12

CPC分类号： H01L27/1225

摘要： A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is lower than that of the oxide semiconductor film of the transistor having small current at negative gate voltage.

摘要翻译： 提供了可以高速运行并消耗更少功率的半导体器件。 在包括各自包含氧化物半导体的晶体管的半导体器件中，在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度与具有高场效应迁移率的晶体管的氧化物半导体膜的氧浓度不同 通态电流。 通常，具有高场电迁移率和大导通状态电流的晶体管的氧化物半导体膜的氧浓度低于在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度。

公开(公告)号：US20120305907A1

公开(公告)日：2012-12-06

申请号：US13584116

申请日：2012-08-13

申请人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

发明人： Takahiro IBE ,  Hisao IKEDA ,  Junichi KOEZUKA ,  Kaoru KATO

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5237 ,  H01L27/3244 ,  H01L51/0042 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0056 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0071 ,  H01L51/0085 ,  H01L51/0089 ,  H01L51/524 ,  H01L51/5253

摘要： Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.

摘要翻译： 本发明的目的是提供一种不容易劣化的发光元件，不容易劣化的发光器件和电子器件，以及不易于劣化的制造发光元件的方法。 在一对电极之间具有EL层的发光元件被含有无机化合物和卤素原子的层或含有有机化合物，无机化合物和卤素原子的层覆盖，由此可以抑制通过水分渗透的劣化 。 因此，可以获得具有长寿命的发光元件。

公开(公告)号：US20120231580A1

公开(公告)日：2012-09-13

申请号：US13413684

申请日：2012-03-07

申请人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

IPC分类号： H01L21/42

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

公开(公告)号：US20120187397A1

公开(公告)日：2012-07-26

申请号：US13356012

申请日：2012-01-23

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC分类号： H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

摘要翻译： 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

公开(公告)号：US20120153395A1

公开(公告)日：2012-06-21

申请号：US13315322

申请日：2011-12-09

申请人： Junichi KOEZUKA ,  Satoshi SHINOHARA ,  Miki SUZUKI ,  Hideto OHNUMA

发明人： Junichi KOEZUKA ,  Satoshi SHINOHARA ,  Miki SUZUKI ,  Hideto OHNUMA

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L27/1288 ,  H01L29/66492 ,  H01L29/78624

摘要： A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

摘要翻译： 提供了一种半导体器件，其包括形成在绝缘表面上并具有源极区，漏极区和沟道形成区的单晶半导体层，覆盖单晶半导体层的栅极绝缘膜和与 沟道形成区域之间插入栅极绝缘膜。 在半导体器件中，源极和漏极区域的至少漏极区域包括与沟道形成区域相邻的第一杂质区域和与第一杂质区域相邻的第二杂质区域。 与深度方向上的第二杂质区域的杂质浓度分布的最大值相比，深度方向上的第一杂质区域的杂质浓度分布的最大值比绝缘面更接近。