摘要:
A method of inspecting and a method of manufacturing image sensors formed on a surface of a semiconductor wafer. A semiconductor wafer is provided having image sensors formed on its surface. Grooves are cut at boundaries between image sensors to be inspected, so that each groove has a depth that is smaller than the thickness of the semiconductor wafer. The grooves are cut in the boundaries between the image sensors so that photoN sensing carriers generated in the boundary regions, that are not generated by the image sensor being inspected, do not affect the inspection of the image sensor. The characteristics of the image sensors are inspected before cutting through the semiconductor wafer to form individual image sensors. Thus, in accordance with the present invention, the electrical characteristics of the image sensors can be accurately ascertained either before or after separation from the semiconductor wafer.
摘要:
An improved image sensor comprises a plurality of photo-sensing elements each comprising an impurity diffusion layer formed in a surface of a semiconductor substrate and arrayed linearly. The photo-sensing elements are of an opposite conductivity type than that of the semiconductor substrate. A transparent insulating film is formed on the photo-sensing elements and the surface of the semiconductor substrate. A non-light transmitting shading film is formed over the transparent insulating film and has photo-sensing windows which overlay a part of each of the photo-sensing elements. The shape and area of each of the photo-sensing elements is equal. The area of each of the photo-sensing windows is equal, but the shape of the first and last photosensing windows is different from that of the remaining photosensing windows. By this arrangement, the amount of photoexcited carriers generated is uniform at all photo-sensing regions, since the area of all photo-sensing windows is equal. Also, since the area and shape of all photo-sensing elements is the same, the amount of photo-excited carriers stored by all the photo-sensing elements is equal, and thus an output current read out from the elements is uniform.
摘要:
A linear image sensor comprises linear image sensor ICs each having light receiving elements arranged according to a preselected resolution level for outputting output signals in accordance with an amount of light received. Switch elements interconnect output terminals of adjacent two or more of the light receiving elements for switching between the preselected resolution level of the light receiving elements to at least one other resolution level constituting a fraction of the preselected resolution level. First amplifier circuits are is connected to output terminals of the light receiving elements. Sample and hold circuits temporarily hold outputs of the first amplifier circuits. Second amplifier circuits are connected to output terminals of the sample and hold circuits. Reading switch elements read outputs of the second amplifier circuits. Scanning circuits control the reading switch elements.
摘要:
The present disclosure relates to a color image reading device that successively switches three color light sources to irradiate the color original copy and successively reads information on the original using a monochrome image sensor, and which is featured by simple construction and less reading time period. A plurality of image sensor ICs are linearly mounted. A start pulse output terminal of an anterior stage image sensor IC is connected to a start pulse input terminal of a posterior stage image sensor IC, thereby forming an image sensor block. A plurality of those image sensor blocks are provided such that start pulse input terminals of initial stage image sensor ICs in all blocks are connected together. By inputting start pulses to the terminals connected together, image signal outputs are read out simultaneously.
摘要:
A voltage at an output terminal of a photodiode is reset to a fixed voltage and an output signal of the photodiode and a dummy signal matching a dark output signal is output by a dummy photodiode comprising an identical component as that of the photodiode. The voltage difference between an input side and an output side of an amplifier is made to match the difference between a reset voltage of the photodiode and a reset voltage of a common signal line and a reset voltage of an output terminal to optimize the size of a MOS transistor forming the amplifier. The offset voltage is set to a constant which does not depend on the size of the MOS transistor. The amplifier is formed with CMOS devices and is selectively operated only during an output operation to suppress the current consumption.
摘要:
A photoelectric converter device having improved residual image characteristics and composed of a transistor having a control electrode region made of a semiconductor of a first conductivity type for accumulating carriers generated by an electromagnetic wave emitted by an object to be detected, a first main electrode region made of a semiconductor of a second conductivity type, and a second main electrode region made of a semiconductor of the second conductivity type, for performing an operation to accumulate the carriers, an operation of reading signals based on the carriers, and an operation of extinguishing the carriers, wherein carriers other than those generated by the electromagnetic wave emitted by the object to be detected are generated in or injected into the control electrode region. Thus, since the amount of excess majority carriers in the control electrode region after the extinguishing operation is always kept substantially constant, improved residual image characteristics are obtained.
摘要:
The solid state imaging device having an array of bit units formed in a semiconductor substrate. Each bit unit is comprised of a phototransistor having a collector formed of the semiconductor substrate an emitter and a base, a switching transistor of the MOS type having a drain connected to the emitter of the phototransistor, an initializing transistor of the MOS type having a drain connected to the base of the phototransistor, a source receptive of a first reference voltage, and a gate connected to the emitter of the phototransistor, and a resetting transistor of the MOS type having a drain connected to the emitter of the phototransistor, a source receptive of a second reference voltage, and a gate receptive of a reset signal. The resetting transistor operates in the reset signal to enable the initializing transistor to initialize the phototransistor. The switching transistor drives the initialized phototransistor to effect reading of image.
摘要:
Provided is a photoelectric conversion device for outputting an output voltage according to incident light, including photoelectric conversion unit for holding an optical charge generated by the incident light, a signal processing circuit impressed with a reference voltage for outputting the output voltage according to the incident light by applying a predetermined process to an output signal of the photoelectric conversion unit, and a switch provided between a terminal externally supplied with the reference voltage, and the signal processing circuit.
摘要:
Provide is a photoelectric conversion device capable of correcting an optical signal with high accuracy and more adaptable to high-speed operations, including: an optical signal common output line (10) commonly connected to all the photoelectric conversion units (30), for outputting an amplified optical signal from each of the photoelectric conversion units in chronological order, and having a first parasitic capacitor (31); an initial voltage common output line (11) commonly connected to all the photoelectric conversion units (30), for outputting the amplified initial voltage from each of the photoelectric conversion units (30) in chronological order, and having a second parasitic capacitor (32); and a capacitor group (20) commonly connected to one of the optical signal common output line (10) and the initial voltage common output line (11), which has a capacitance value substantially equal to a differential capacitance value between the first parasitic capacitor (31) and the second parasitic capacitor (32).
摘要:
A photoelectric converter has light receiving elements, amplifier circuits connected to respective outputs of the light receiving elements, reset circuits connected to respective outputs of some of the light receiving elements, and connection circuits connected between respective outputs of adjacent ones of the light receiving elements.