公开(公告)号：US5879851A

公开(公告)日：1999-03-09

申请号：US718515

申请日：1996-10-08

申请人： Makoto Takahashi ,  Satoshi Takechi

发明人： Makoto Takahashi ,  Satoshi Takechi

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027 ,  G03C5/18

CPC分类号： G03F7/322

摘要： A method for forming resist patterns comprising coating a resist comprising a polymeric or copolymeric compound having a repeating unit comprising a protected alkali-soluble group in which the protecting group is cleaved with an acid so that the compound is made alkali-soluble, and an acid generator capable of generating an acid upon the radiation exposure to a substrate to be fabricated, then pre-baking the formed resist film, successively selectively exposing the resist film, thereafter, developing a latent image with a developer containing an aqueous or alcoholic solution of a specified ammonium compound or morpholine compound. According to this method, crack formation and peeling of a pattern can be suppressed at the time of forming resist patterns.

摘要翻译： PCT No.PCT / JP96 / 00295 Sec。 371日期1996年10月8日第 102（e）日期1996年10月8日PCT 1996年2月9日PCT PCT。 公开号WO96 / 24888 日期1996年8月15日一种形成抗蚀剂图案的方法，包括涂覆抗蚀剂，该抗蚀剂包括具有重复单元的聚合物或共聚合物，该重复单元包含被保护基团与酸分解的保护的碱溶性基团， 能够在放射线照射到要制造的基板上时产生酸的酸发生剂，然后预先烘烤形成的抗蚀剂膜，依次选择性地暴露抗蚀剂膜，然后用含有水溶液的显影剂显影潜像 或特定的铵化合物或吗啉化合物的醇溶液。 根据该方法，在形成抗蚀剂图案时可以抑制图案的裂纹形成和剥离。

公开(公告)号：US5153103A

公开(公告)日：1992-10-06

申请号：US667897

申请日：1991-03-12

申请人： Akiko Kotachi ,  Satoshi Takechi

发明人： Akiko Kotachi ,  Satoshi Takechi

IPC分类号： C08F20/02 ,  C08F20/22 ,  C08F20/52 ,  C08F30/08 ,  C08F220/02 ,  C08F220/22 ,  C08F220/56 ,  C08F220/58 ,  C08F230/08 ,  G03F7/004 ,  G03F7/075 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3213

CPC分类号： G03F7/0758 ,  G03F7/0046 ,  Y10S430/168

摘要： A high energy radiation-sensitive, pattern-forming resist composition comprising a polymer of the formula (I): ##STR1## in which R.sub.1 represents an alkyl groups, cyano group, --CH.sub.2 OH or --CH.sub.2 CO.sub.2 R wherein R represents an alkyl group, R.sub.2 represents a hydrocarbon group containing at least one silicon atom, R.sub.3 represents a group capable of causing crosslinking of the polymer upon application of heat, and m and n each is an integer. The resist composition is particularly useful as a top layer resist of the bi-level resist system, and the exposed top layer resist can be stably developed because of a remarkably increased difference of the solubility in the developer of the exposed and unexposed areas thereof.

公开(公告)号：US06887649B2

公开(公告)日：2005-05-03

申请号：US10092310

申请日：2002-03-07

申请人： Akihiko Otoguro ,  Satoshi Takechi

发明人： Akihiko Otoguro ,  Satoshi Takechi

IPC分类号： G03F7/075 ,  G03F7/11 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  G03F7/004

CPC分类号： G03F7/0758 ,  G03F7/11 ,  H01L21/0275 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  Y10S430/146

摘要： There are provided steps of forming a lower resist layer on a patterning objective layer, forming an organic intermediate layer made of organic material, that contains no Si—O bond in its structure, on the lower resist layer, forming an upper resist layer made of alicyclic resin on the organic intermediate layer, forming a pattern by exposing/developing the upper resist layer, transferring the pattern of the upper resist layer onto the organic intermediate layer by etching the organic intermediate layer while using the upper resist layer as a mask, transferring a pattern of the organic intermediate layer onto the lower resist layer by etching the lower resist layer while using the organic intermediate layer as a mask, and etching the patterning objective layer while using the lower resist layer as a mask. Accordingly, a semiconductor device manufacturing method containing patterning steps employing a multi-layered resist structure, that is capable of suppressing deformation of the pattern of the upper resist layer formed of alicyclic compound, can be provided.

摘要翻译： 提供了在图案化目标层上形成下抗蚀剂层的步骤，在下抗蚀剂层上形成由下列抗蚀剂层构成的由有机材料构成的有机中间层，其中不包含Si-O键，形成上层抗蚀剂层 在有机中间层上形成脂环族树脂，通过曝光/显影上抗蚀剂层形成图案，通过蚀刻有机中间层将上抗蚀剂层的图案转印到有机中间层上，同时使用上抗蚀剂层作为掩模，转印 通过在使用有机中间层作为掩模的同时蚀刻下抗蚀剂层而将有机中间层的图案涂覆到下抗蚀剂层上，并且在使用下抗蚀剂层作为掩模的同时蚀刻图案化目标层。 因此，可以提供包含能够抑制由脂环族化合物形成的上抗蚀剂层的图案的变形的采用多层抗蚀剂结构的图案化步骤的半导体器件制造方法。

公开(公告)号：US06207342B1

公开(公告)日：2001-03-27

申请号：US09065567

申请日：1998-04-24

申请人： Satoshi Takechi ,  Isamu Hanyu

发明人： Satoshi Takechi ,  Isamu Hanyu

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111

摘要： Chemically amplified resist material which comprises: I. an acid-sensitive terpolymer produced upon copolymerization of (i) a first monomer unit having a structure which contains an alkali-soluble group protected with an alicyclic hydrocarbon-containing protective group, (ii) a second monomer unit having a lactone structure, and (iii) a third monomer unit having a structure which contains an alkali-soluble group protected with a protective group different from that of said first monomer unit; and II. a photoacid generator capable of producing an acid upon exposure to a patterning radiation, and the process for forming resist patterns using this resist material.

摘要翻译： 化学扩增抗蚀剂材料，其包含：I.一种酸敏感性三聚物，其通过（i）具有包含被含有脂环烃的保护基团保护的碱溶性基团的结构的第一单体单元共聚制备，（ii）第二单体单元 具有内酯结构的单体单元，和（iii）具有含有不同于所述第一单体单元的保护基保护的碱溶性基团的结构的第三单体单元; 和II。 能够在曝光于图案化辐射时产生酸的光致酸产生剂，以及使用该抗蚀剂材料形成抗蚀剂图案的方法。

公开(公告)号：US06013416A

公开(公告)日：2000-01-11

申请号：US673739

申请日：1996-06-27

申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

摘要翻译： 碱可显影的化学放大抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性成膜化合物，其中所述受保护的碱溶性基团的保护部分在酸的作用下被切割 由与所述化合物组合使用的光致酸产生剂产生，从而从碱溶性基团释放保护部分并将所述化合物转化为碱溶性化合物，以及能够在曝光于图案化辐射时分解的光致酸产生剂 产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物特别适合于使用碱性显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不膨胀。

公开(公告)号：US5019485A

公开(公告)日：1991-05-28

申请号：US420427

申请日：1989-10-12

申请人： Yuko Nakamura ,  Satoshi Takechi

发明人： Yuko Nakamura ,  Satoshi Takechi

IPC分类号： G03F7/11 ,  C09K3/16 ,  G03F7/004 ,  G03F7/09 ,  G03F7/16

CPC分类号： G03F7/0045 ,  G03F7/093

摘要： Electrically conductive layer-providing compositions comprising a conducting or semiconducting polymer and/or a non-conducting precursor thereof and a photo-acid generator having a sensitivity to an ultraviolet radiation having a wavelength of 300 nm or less. The electrically conductive layer, when an electron beam resist layer adjacent thereto is exposed to a pattern of the electron beam, can effectively prevent an accumulation of an electrical charge on the resist layer and accordingly a misalignment of the resist pattern. In addition, the compositions and electrically conductive layer resulting therefrom can be stably stored if not exposed to ultraviolet radiation. Pattern formation processes using the electrically conductive layer-providing compositions are also provided.

公开(公告)号：US06699645B2

公开(公告)日：2004-03-02

申请号：US08810773

申请日：1997-03-05

申请人： Makoto Takahashi ,  Satoshi Takechi

发明人： Makoto Takahashi ,  Satoshi Takechi

IPC分类号： B03F730

CPC分类号： G03F7/322

摘要： Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.

摘要翻译： 通过使用包含碱不溶性基础聚合物或共聚物和酸产生剂的化学放大抗蚀剂形成抗蚀剂图案的方法，其中所述抗蚀剂的图案曝光膜在表面存在下用有机碱性显影剂显影 其分子中含有较高级烷基的活性剂。 抗蚀剂图案没有诸如裂纹和剥离的缺点，因此可以有利地用于制造诸如LSI和VLSI的半导体器件。

公开(公告)号：US06329125B2

公开(公告)日：2001-12-11

申请号：US09739259

申请日：2000-12-19

申请人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

发明人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.

公开(公告)号：US06248920B1

公开(公告)日：2001-06-19

申请号：US08996158

申请日：1997-12-22

申请人： Satoshi Takechi ,  Tadashi Kikukawa

发明人： Satoshi Takechi ,  Tadashi Kikukawa

IPC分类号： C07C6974

CPC分类号： G03F7/0397 ,  C07C67/14 ,  C07C69/54

摘要： Process for the quantitative preparation of esters, with a high yield, which comprises reacting an aldehyde or ketone compound and an acid halide compound in a one pot reaction in the presence of at least one compound represented by the following formulae: RMgX   (I); RMgX/CuX   (II); and RLi or R(CuLi)½  (III); in which R represents a hydrocarbon group, and X represents a halogen atom. Production processes of a resist material and a semiconductor device are also disclosed.

摘要翻译： 用于定量制备酯的方法，其高产率，其包括在一锅反应中在至少一种由下式表示的化合物存在下使醛或酮化合物与酰卤化合物反应：其中R表示 烃基，X表示卤素原子。 还公开了抗蚀剂材料和半导体器件的制造工艺。

公开(公告)号：US5403699A

公开(公告)日：1995-04-04

申请号：US100343

申请日：1993-08-02

申请人： Satoshi Takechi ,  Yuko Nakamura ,  Akiko Kotachi

发明人： Satoshi Takechi ,  Yuko Nakamura ,  Akiko Kotachi

IPC分类号： G03F7/039 ,  G03F7/32

CPC分类号： G03F7/039 ,  G03F7/325 ,  Y10S430/143

摘要： A pattern formation process using a positive-working resist material of the formula (I): ##STR1## in which R.sup.1 and R.sup.2 may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100; and carrying out the development of the selectively exposed resist material with xylene for 10 to 20 minutes, or with other solvent(s). This process effectively obtains fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and resist residues in an exposed area of the same.

摘要翻译： 使用式（I）的正性抗蚀剂材料的图案形成方法：其中R 1和R 2可以相同或不同，并且各自表示取代或未取代的低级烷基，X表示 卤素原子，m和n分别大于0且小于100; 并用二甲苯进行10至20分钟的选择性曝光的抗蚀剂材料的显影，或与其它溶剂一起进行。 该方法有效地获得具有增加的灵敏度和优异的分辨率的精细抗蚀剂图案，而不会降低抗蚀剂的未曝光区域中的层厚度，并且抗蚀剂图案在其曝光区域中抵抗残留物。