公开(公告)号：US6066891A

公开(公告)日：2000-05-23

申请号：US802214

申请日：1997-02-19

申请人： Tooru Yamaoka ,  Atsushi Komura ,  Takeshi Yamauchi ,  Yoshihiko Isobe ,  Hiroyuki Yamane

发明人： Tooru Yamaoka ,  Atsushi Komura ,  Takeshi Yamauchi ,  Yoshihiko Isobe ,  Hiroyuki Yamane

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L29/45 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76867 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76858 ,  H01L23/53223 ,  H01L29/456 ,  H01L2924/0002

摘要： The purpose of the present invention is to obtain an electrode wiring structure for semiconductor devices that can suppress the occurrence of Al voids inside aluminum alloy wiring without regard to the orientation of such aluminum alloy wiring. An interlayer insulator film 11, a titanium layer 12, a titanium nitride layer 13 that serves as the barrier layer, an aluminum alloy wiring layer 15 and a protective film 18 are formed on top of the silicon substrate 10 to compose the electrode structure. In this case, a distortion relaxation layer 14, with a film thickness of approximately over 10 nm and which is an intermetallic compound that includes aluminum and titanium in its composition, is formed in between the titanium nitride layer 13 and the aluminum alloy wiring layer 15. Because of this distortion relaxation layer, for every wiring width of 1 .mu.m, the number of Al voids with widths of over 0.3 .mu.m is practically reduced to 0.

摘要翻译： 本发明的目的是为了获得能够抑制铝合金布线内的Al空隙的出现而不考虑这种铝合金布线的取向的半导体器件的电极布线结构。 在硅衬底10的顶部上形成层间绝缘膜11，钛层12，用作阻挡层的氮化钛层13，铝合金布线层15和保护膜18，以构成电极结构。 在这种情况下，在氮化钛层13和铝合金布线层15之间形成膜厚约为10nm以上的构成铝和钛的金属间化合物的失真弛豫层14 由于这种失真弛豫层，对于1μm的每个布线宽度，宽度大于0.3μm的Al空隙的数量实际上减少到0。

公开(公告)号：US06650017B1

公开(公告)日：2003-11-18

申请号：US09637066

申请日：2000-08-11

申请人： Kazuo Akamatsu ,  Yoshihiko Isobe ,  Hiroyuki Yamane

发明人： Kazuo Akamatsu ,  Yoshihiko Isobe ,  Hiroyuki Yamane

IPC分类号： H01L2348

CPC分类号： H01L21/7685 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76886 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate an Al alloy layer containing therein copper (Cu), and forming on the Al alloy layer a titanium nitride (TiN) film with enhanced chemical reactivity by using sputtering techniques while applying thereto a DC power of 5.5 W/cm2 or less. Fabrication of such reactivity-rich TiN film on the Al alloy layer results in a reaction layer of Al and Ti being subdivided into several spaced-apart segments. In this case, the reaction layer hardly serves as any diffusion path; thus, it becomes possible to prevent Cu as contained in the Al alloy layer from attempting to outdiffuse with the reaction layer being as its diffusion path. This makes it possible to suppress or minimize unwanted fabrication of AlN on or above the surface of an Al containing lead pattern, thereby enabling increase in electromigration (EM) lifetime of electrical interconnect leads used.

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件具有硅衬底半导体元件和与其电连接的铝（Al）合金布线引线。 该方法包括以下步骤：在硅衬底上形成含有铜（Cu）的Al合金层，并且通过使用溅射技术在Al合金层上形成具有增强的化学反应性的氮化钛（TiN）膜，同时施加直流电力 为5.5W / cm 2以下。 在Al合金层上制备这种富含反应性的TiN膜导致Al和Ti的反应层被细分成几个间隔开的段。 在这种情况下，反应层几乎不作为任何扩散路径; 因此，可以防止Al合金层中所含的Cu作为其扩散路径而反向扩散。 这使得可以抑制或最小化在含铝的引线图案的表面上或上方的AlN的不希望的制造，从而能够增加使用的电互连引线的电迁移（EM）寿命。

公开(公告)号：US06497978B1

公开(公告)日：2002-12-24

申请号：US09445300

申请日：2000-03-02

申请人： Akiyoshi Takada ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

发明人： Akiyoshi Takada ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

IPC分类号： H01M0208

CPC分类号： H01M2/1241 ,  H01M10/052

摘要： The object of the present invention is to provide an explosion-proof safety valve assemblage having a lead cap which allows some of the manufacturing man-hour in the process such as precision working and positioning to be deleted, since the lead cap is integrally formed with an explosion-proof safety valve and serves to provide a current circuit in a battery in place of a conventional one composed of lead plate or lead wire which requires such precision working and positioning operations, and to provide a closed secondary battery using the above mentioned safety valve assemblage. An explosion-proof safety valve assemblage for use in a closed secondary battery comprising an outer container, an electrode element, consisting of a positive electrode, negative electrode, and a separator, accommodated in said outer container, wherein said safety valve assemblage is sealingly secured to an open end portion of said outer container via an insulating gasket integrally with a closing cap, and it consists of an explosion-proof safety valve element, a coreless disc-shaped insulator, and a lead cap formed of a metal substrate and a metal foil laminated to the metal substrate, substantially the center of which is provided with an opening, and a closed secondary battery using the above mentioned safety valve assemblage.

摘要翻译： 本发明的目的是提供一种具有铅帽的防爆安全阀组件，其允许在诸如精密加工和定位的过程中的一些制造工时被删除，因为铅帽与 一种防爆安全阀，用于在电池中提供电流回路，以代替需要这种精密加工和定位操作的铅板或导线组成的常规电路，并提供使用上述安全性的封闭二次电池 阀组合。 一种用于封闭二次电池的防爆安全阀组件，包括容纳在所述外部容器中的外容器，由正极，负极和隔板组成的电极元件，其中所述安全阀组件被密封地固定 通过与封闭盖一体形成的绝缘垫片，连接到所述外部容器的开口端部，并且由防爆安全阀元件，无芯圆形绝缘体和由金属基底和金属形成的引线盖组成 箔片层压到基本上其中心设置有开口的金属基板上，并且使用上述安全阀组件封闭二次电池。

公开(公告)号：US06337504B1

公开(公告)日：2002-01-08

申请号：US09031733

申请日：1998-02-27

申请人： Yoshihiko Isobe ,  Hidetoshi Muramoto ,  Hisayoshi Ooshima ,  Masahiro Ogino

发明人： Yoshihiko Isobe ,  Hidetoshi Muramoto ,  Hisayoshi Ooshima ,  Masahiro Ogino

IPC分类号： H01L2976

CPC分类号： H01L29/6659 ,  H01L21/26586 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823864 ,  H01L29/665 ,  Y10S257/90

摘要： An MIS transistor fabricated in a manner that minimizes the occurrence of leak currents and that improves overall transistor performance by minimizing variation in location of the transistor source and drain during fabrication thereof. A gate electrode is first fabricated on a substrate. Next, a thermal oxide layer is formed on a side of the gate electrode. A masking process is then performed with the thermal oxide layer to form a source and a drain. A silicon oxide layer is then deposited over the gate electrode, the source and the drain. An etching process is performed on the silicon oxide to form a side wall oxide film over the thermal oxide layer on the side of the gate electrode and to expose surfaces of the gate electrode, the source and the drain. A metal film is then deposited over the gate electrode, the source and the drain and is heat treated to form a metal silicide film on the exposed surfaces of the gate electrode, the source and the drain. The side wall oxide film functions to disperse the metal silicide film as it is deposited to electrically separate the gate electrode, the source and the drain, thereby preventing a leakage current from occurring.

摘要翻译： 以最小化泄漏电流的发生的方式制造的MIS晶体管，并且通过使晶体管源极和漏极在其制造期间的位置的变化最小化来改善整体晶体管的性能。 首先在基板上制造栅电极。 接下来，在栅电极的一侧形成热氧化层。 然后用热氧化物层进行掩模处理以形成源极和漏极。 然后在栅电极，源极和漏极上沉积氧化硅层。 对氧化硅进行蚀刻处理，以在栅电极侧的热氧化层上形成侧壁氧化膜，并露出栅电极，源极和漏极的表面。 然后在栅电极，源极和漏极上沉积金属膜，并且在栅电极，源极和漏极的暴露表面上进行热处理以形成金属硅化物膜。 侧壁氧化膜用于在金属硅化物膜沉积时分散栅极电极，源极和漏极，从而防止发生漏电流。

公开(公告)号：US06287933B1

公开(公告)日：2001-09-11

申请号：US08015268

申请日：1992-01-03

申请人： Makio Iida ,  Shoji Miura ,  Kanemitsu Terada ,  Hiroyuki Ban ,  Kiyoshi Yamamoto ,  Katsuyoshi Oda ,  Yoshihiko Isobe

发明人： Makio Iida ,  Shoji Miura ,  Kanemitsu Terada ,  Hiroyuki Ban ,  Kiyoshi Yamamoto ,  Katsuyoshi Oda ,  Yoshihiko Isobe

IPC分类号： H01L2120

CPC分类号： H01L28/24

摘要： A semiconductor device having a thin film resistor which comprises at least chromium, silicon and nitrogen, and formed on a substrate with having a special ratio of the chemical composition, the semiconductor device having a characteristic such that variations of the resistance value thereof due to temperature variations can be effectively suppressed.

摘要翻译： 一种具有薄膜电阻器的半导体器件，该薄膜电阻器至少包含铬，硅和氮，并且形成在具有特定比例的化学成分的基板上，该半导体器件具有使其由于温度导致的电阻值的变化的特性 可以有效地抑制变化。

公开(公告)号：US5747846A

公开(公告)日：1998-05-05

申请号：US346287

申请日：1994-11-23

申请人： Makio Iida ,  Tetsuo Fujii ,  Yoshihiko Isobe

发明人： Makio Iida ,  Tetsuo Fujii ,  Yoshihiko Isobe

IPC分类号： H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L27/10

CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11531

摘要： A non-volatile memory cell having a structure having improved integration and simplified electrode wiring structure. The programmable non-volatile memory cell of the present invention adopts a mono-layer gate scheme to simplify the electrode wiring structure and to eliminate a current leakage problem of an insulating film between electrodes. A side and bottom of a semiconductor region, which is disposed directly below a capacity electrode section with a gate insulating film interposed therebetween that compose a control electrode, are isolated from another semiconductor region and semiconductor substrate by insulating films. Thus, a high programming control voltage which is not limited by a junction yield voltage between the semiconductor regions and semiconductor substrate may be applied. Due to that, an area of the capacity electrode section of a floating electrode may be considerably reduced.

摘要翻译： 具有改进的集成和简化的电极布线结构的结构的非易失性存储单元。 本发明的可编程非易失性存储单元采用单层栅极方案来简化电极布线结构，并消除电极之间绝缘膜的漏电问题。 通过绝缘膜将另一个半导体区域的半导体区域和半导体区域的半导体区域和半导体衬底的另一个半导体区域和半导体衬底隔离，其中，半导体区域的一侧和底部直接配置在其间具有构成控制电极的栅极绝缘膜 因此，可以应用不受半导体区域和半导体衬底之间的接合屈服电压限制的高编程控制电压。 因此，浮动电极的电容电极部分的面积可以大大减小。

公开(公告)号：US5284794A

公开(公告)日：1994-02-08

申请号：US960298

申请日：1992-10-13

申请人： Yoshihiko Isobe ,  Makio Iida ,  Shoji Miura ,  Keizou Kajiura ,  Mikimasa Suzuki ,  Masami Saito

发明人： Yoshihiko Isobe ,  Makio Iida ,  Shoji Miura ,  Keizou Kajiura ,  Mikimasa Suzuki ,  Masami Saito

IPC分类号： H01L21/02 ,  H01L21/26

CPC分类号： H01L28/24 ,  H01L28/40 ,  Y10S148/055 ,  Y10S148/136 ,  Y10S438/94

摘要： A semiconductor device has a thin-film resistor trimmed by laser. The semiconductor device comprises a semiconductor substrate having an element region that covers at least part of the surface of the semiconductor substrate, a first insulation film disposed on the surface of the semiconductor substrate, and a second insulation film disposed on the surface of the semiconductor substrate through an opening of the first insulation film. The opening is formed by selectively removing at least part of the first insulation film at a location on the surface of the semiconductor substrate where the element region is not involved. The thin-film resistor is formed on the second insulation film.

摘要翻译： 半导体器件具有通过激光器修整的薄膜电阻器。 半导体器件包括具有覆盖半导体衬底的表面的至少一部分的元件区域的半导体衬底，设置在半导体衬底的表面上的第一绝缘膜和设置在半导体衬底的表面上的第二绝缘膜 通过第一绝缘膜的开口。 通过在不涉及元件区域的半导体衬底的表面上的位置处选择性地去除第一绝缘膜的至少一部分来形成开口。 薄膜电阻器形成在第二绝缘膜上。

公开(公告)号：US06303246B1

公开(公告)日：2001-10-16

申请号：US09423433

申请日：2000-01-14

申请人： Akiyoshi Takada ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

发明人： Akiyoshi Takada ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

IPC分类号： H01M212

CPC分类号： H01M2/345 ,  H01M2/1241 ,  H01M2200/20

摘要： The object of the present invention is to provide a closed battery capable of rapidly releasing the internal pressure thereof and at the same time disconnecting the current to effectively prevent itself from temperature rising and explosion so that it may assure the safety and reliability thereof, when the internal pressure is elevated due to short circuit, overcharge, reverse charge, or the like in such a completely closed battery. The formation of a valve element 5 whose center is eccentric to the center of a metal substrate 1 produces a slit 3 having a large width portion around the circumference of a valve element 5. When the internal pressure of a battery is elevated, the valve element 5 is smoothly raised up together with a metal foil 2 from the bending fulcrum portion 4 to thereby cut a lead wire 6 or permit a braze portion 8 to detach from the lead wire 6, thus reliably disconnecting the current. Then, the metal foil is allowed to burst stably and accurately at a prescribed pressure to thereby form a valve opening portion 7 so that the internal gas of the battery can be discharged. Thus, the battery can previously be prevented from exploding.

摘要翻译： 本发明的目的是提供一种能够快速释放其内部压力并且同时断开电流以有效地防止其升温和爆炸的封闭电池，从而可以确保其安全性和可靠性， 在这种完全封闭的电池中，内部压力由于短路，过充电，反向充电等而升高。 中心偏心于金属基板1的中心的阀元件5的形成产生了围绕阀元件5的圆周具有大的宽度部分的狭缝3.当电池的内部压力升高时，阀元件 5从弯曲支点部4与金属箔2一起平滑地升起，从而切断引线6，或者使钎焊部8与引线6脱离，从而可靠地断开电流。 然后，允许金属箔以规定的压力稳定且准确地爆裂，从而形成阀开口部7，使得电池的内部气体能够排出。 因此，可以预先防止电池爆炸。

公开(公告)号：US06210825B1

公开(公告)日：2001-04-03

申请号：US09125261

申请日：1998-08-12

申请人： Akiyoshi Takada ,  Akira Takagi ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

发明人： Akiyoshi Takada ,  Akira Takagi ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

IPC分类号： H01M212

CPC分类号： H01M2/1241

摘要： A safety valve element for battery use which ruptures at a stable pressure range so as to release the inner pressure of the battery is disclosed. The safety valve element for battery use comprises a metal substrate which is provided with a perforated opening and a metal foil laminated on the metal substrate so as to close the perforated opening. A battery which is provided with such a safety valve is also disclosed. A battery case provided with such a safety valve is also disclosed. The battery and the battery case lid is produced by forming the perforated opening in the metal substrate, pressure welding the metal foil to the metal substrate and molding the clad material into a form of the battery case lid.

摘要翻译： 公开了一种用于电池使用的安全阀元件，其在稳定的压力范围内破裂以释放电池的内部压力。 用于电池使用的安全阀元件包括金属基底，该金属基底设置有穿孔开口和层压在金属基底上的金属箔，以封闭穿孔孔。 还公开了一种设有这种安全阀的电池。 还公开了一种设有这种安全阀的电池盒。 电池和电池盒盖通过在金属基板中形成穿孔开口，将金属箔压接到金属基板上并将包层材料模制成电池盒盖的形式来制造。

公开(公告)号：US6150037A

公开(公告)日：2000-11-21

申请号：US117854

申请日：1998-08-12

申请人： Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

发明人： Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

IPC分类号： B23K20/04 ,  H01M2/12 ,  B32B15/01

CPC分类号： B23K20/04 ,  H01M2/1235 ,  H01M2/1241 ,  Y10T428/1234 ,  Y10T428/12438 ,  Y10T428/12493 ,  Y10T428/12646 ,  Y10T428/1275 ,  Y10T428/12757 ,  Y10T428/12778 ,  Y10T428/12882 ,  Y10T428/12917 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12986 ,  Y10T428/24331

摘要： Clad material comprises a metal substrate which is provided with a multiplicity of perforated openings therein and a metal foil which is laminated on the metal substrate to close the perforated openings. To produce such a clad material, at least one surface of the metal substrate and corresponding one surface of the metal foil are respectively subjected to a dry etching and the metal substrate and the metal foil are laminated in such a manner that the etched surfaces face each other. Alternately, only one surface of the metal substrate is subjected to a dry etching and the metal substrate and the metal foil are laminated in such a manner that the etched surface of the metal substrate defines a laminating surface. It may be possible to provide a nickel plating on the metal substrate or the metal foil. The clad material can be effectively used for producing safety valve chips which rupture accurately at low pressures which fall in a stable pressure range on a mass production basis.

摘要翻译： PCT No.PCT / JP97 / 00389。 371日期1998年8月12日 102（e）日期1998年8月12日PCT 1997年2月14日提交PCT公布。 公开号WO97 / 30483 日期1997年8月21日包覆材料包括在其中设置有多个穿孔的金属基底和层压在金属基底上以封闭穿孔的金属箔。 为了制造这种包覆材料，金属基板的至少一个表面和金属箔的对应的一个表面分别进行干蚀刻，并且金属基板和金属箔被层压，使得蚀刻表面面对每个 其他。 或者，仅对金属基板的一个表面进行干蚀刻，并且以金属基板的蚀刻表面限定层压表面的方式层压金属基板和金属箔。 可以在金属基板或金属箔上提供镀镍。 包层材料可以有效地用于生产在大批量生产的基础上在稳定的压力范围内精确地破裂的低压安全阀芯片。