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    Method of manufacturing semiconductor device
    1.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06908857B2

    公开(公告)日：2005-06-21

    申请号：US10657081

    申请日：2003-09-09

    申请人： Kazuo Akamatsu ,  Yoshihiko Isobe ,  Hiroyuki Yamane

    发明人： Kazuo Akamatsu ,  Yoshihiko Isobe ,  Hiroyuki Yamane

    IPC分类号： H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/7685 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76886 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate an Al alloy layer containing therein copper (Cu), and forming on the Al alloy layer a titanium nitride (TiN) film with enhanced chemical reactivity by using sputtering techniques while applying thereto a DC power of 5.5 W/cm2 or less. Fabrication of such reactivity-rich TiN film on the Al alloy layer results in a reaction layer of Al and Ti being subdivided into several spaced-apart segments. In this case, the reaction layer hardly serves as any diffusion path; thus, it becomes possible to prevent Cu as contained in the Al alloy layer from attempting to outdiffuse with the reaction layer being as its diffusion path. This makes it possible to suppress or minimize unwanted fabrication of AlN on or above the surface of an Al containing lead pattern, thereby enabling increase in electromigration (EM) lifetime of electrical interconnect leads used.

    摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件具有硅衬底半导体元件和与其电连接的铝（Al）合金布线引线。 该方法包括以下步骤：在硅衬底上形成含有铜（Cu）的Al合金层，并且通过使用溅射技术在Al合金层上形成具有增强的化学反应性的氮化钛（TiN）膜，同时施加直流电力 为5.5W / cm 2以下。 在Al合金层上制备这种富含反应性的TiN膜导致Al和Ti的反应层被细分成几个间隔开的段。 在这种情况下，反应层几乎不作为任何扩散路径; 因此，可以防止Al合金层中所含的Cu作为其扩散路径而反向扩散。 这使得可以抑制或最小化在含铝的引线图案的表面上或上方的AlN的不希望的制造，从而能够增加使用的电互连引线的电迁移（EM）寿命。

    Electrical wiring of semiconductor device enabling increase in electromigration (EM) lifetime
    2.
    发明授权
    Electrical wiring of semiconductor device enabling increase in electromigration (EM) lifetime 有权
    半导体器件的电气布线能够增加电迁移（EM）寿命

    公开(公告)号：US06650017B1

    公开(公告)日：2003-11-18

    申请号：US09637066

    申请日：2000-08-11

    申请人： Kazuo Akamatsu ,  Yoshihiko Isobe ,  Hiroyuki Yamane

    发明人： Kazuo Akamatsu ,  Yoshihiko Isobe ,  Hiroyuki Yamane

    IPC分类号： H01L2348

    CPC分类号： H01L21/7685 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76886 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate an Al alloy layer containing therein copper (Cu), and forming on the Al alloy layer a titanium nitride (TiN) film with enhanced chemical reactivity by using sputtering techniques while applying thereto a DC power of 5.5 W/cm2 or less. Fabrication of such reactivity-rich TiN film on the Al alloy layer results in a reaction layer of Al and Ti being subdivided into several spaced-apart segments. In this case, the reaction layer hardly serves as any diffusion path; thus, it becomes possible to prevent Cu as contained in the Al alloy layer from attempting to outdiffuse with the reaction layer being as its diffusion path. This makes it possible to suppress or minimize unwanted fabrication of AlN on or above the surface of an Al containing lead pattern, thereby enabling increase in electromigration (EM) lifetime of electrical interconnect leads used.

    摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件具有硅衬底半导体元件和与其电连接的铝（Al）合金布线引线。 该方法包括以下步骤：在硅衬底上形成含有铜（Cu）的Al合金层，并且通过使用溅射技术在Al合金层上形成具有增强的化学反应性的氮化钛（TiN）膜，同时施加直流电力 为5.5W / cm 2以下。 在Al合金层上制备这种富含反应性的TiN膜导致Al和Ti的反应层被细分成几个间隔开的段。 在这种情况下，反应层几乎不作为任何扩散路径; 因此，可以防止Al合金层中所含的Cu作为其扩散路径而反向扩散。 这使得可以抑制或最小化在含铝的引线图案的表面上或上方的AlN的不希望的制造，从而能够增加使用的电互连引线的电迁移（EM）寿命。

    Electrode for semiconductor device and method for manufacturing same
    3.
    发明授权
    Electrode for semiconductor device and method for manufacturing same 有权
    半导体装置用电极及其制造方法

    公开(公告)号：US06348735B1

    公开(公告)日：2002-02-19

    申请号：US09482895

    申请日：2000-01-14

    申请人： Tooru Yamaoka ,  Atsushi Komura ,  Takeshi Yamauchi ,  Yoshihiko Isobe ,  Hiroyuki Yamane

    发明人： Tooru Yamaoka ,  Atsushi Komura ,  Takeshi Yamauchi ,  Yoshihiko Isobe ,  Hiroyuki Yamane

    IPC分类号： H01L2348

    CPC分类号： H01L21/76867 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76858 ,  H01L23/53223 ,  H01L29/456 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The purpose of the present invention is to obtain an electrode wiring structure for semiconductor devices that can suppress the occurrence of Al voids inside aluminum alloy wiring without regard to the orientation of such aluminum alloy wiring. An interlayer insulator film 11, a titanium layer 12, a titanium nitride layer 13 that serves as the barrier layer, an aluminum alloy wiring layer 15 and a protective film 18 are formed on top of the silicon substrate 10 to compose the electrode structure. In this case, a distortion relaxation layer 14, with a film thickness of approximately over 10 nm and which is an intermetallic compound that includes aluminum and titanium in its composition, is formed in between the titanium nitride layer 13 and the aluminum alloy wiring layer 15. Because of this distortion relaxation layer, for every wiring width of 1 &mgr;m, the number of Al voids with widths of over 0.3 &mgr;m is practically reduced to 0.

    摘要翻译： 本发明的目的是为了获得能够抑制铝合金布线内的Al空隙的出现而不考虑这种铝合金布线的取向的半导体器件的电极布线结构。 在硅衬底10的顶部上形成层间绝缘膜11，钛层12，用作阻挡层的氮化钛层13，铝合金布线层15和保护膜18，以构成电极结构。 在这种情况下，在氮化钛层13和铝合金布线层15之间形成膜厚约为10nm以上的构成铝和钛的金属间化合物的失真弛豫层14 由于该失真弛豫层，对于1mum的每个布线宽度，宽度大于0.3μm的Al空隙的数量实际上减小到0。

    Semiconductor sensor and method of manufacturing the same
    6.
    发明申请
    Semiconductor sensor and method of manufacturing the same 有权
    半导体传感器及其制造方法

    公开(公告)号：US20080202249A1

    公开(公告)日：2008-08-28

    申请号：US12010758

    申请日：2008-01-29

    申请人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

    发明人： Hisanori Yokura ,  Yoshihiko Isobe ,  Eishi Kawasaki

    IPC分类号： G01L9/04 ,  H01C17/28

    CPC分类号： G01L9/0055 ,  G01K5/52 ,  G01L1/2293 ,  H01L2224/02166 ,  Y10T29/49103

    摘要： A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.

    摘要翻译： 一种半导体压力感测装置，包括具有隔膜的金属杆和结合到隔膜的半导体传感器。 半导体传感器包括测量部分和第一和第二接合焊盘。 仪表部分被配置为根据隔膜的变形而变形。 第一和第二接合焊盘分别连接到量规部分的不同位置，使得第一和第二接合焊盘之间的电阻随着隔膜变形的改变而改变。 测量部分形成为绝缘体上硅衬底的半导体层。 通过激活半导体传感器和隔膜之间的接触表面，半导体传感器直接接合到隔膜。

    Closed battery and closing member
    7.
    发明授权
    Closed battery and closing member 失效
    闭合电池和关闭件

    公开(公告)号：US06423440B1

    公开(公告)日：2002-07-23

    申请号：US09436488

    申请日：1999-11-09

    申请人： Akiyoshi Takada ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

    发明人： Akiyoshi Takada ,  Kinji Saijo ,  Kazuo Yoshida ,  Nobuyuki Yoshimoto ,  Yoshihiko Isobe

    IPC分类号： H01M212

    CPC分类号： H01M2/345 ,  H01M2/1241 ,  H01M2/34

    摘要： The object of the present invention is to provide a closed battery capable of rapidly releasing the internal pressure thereof and at the same time disconnecting the current to effectively prevent itself from temperature rising and exploding so that in such a completely closed battery it may assure the safety and reliability thereof, when the internal pressure is elevated due to short circuit, overcharge, reverse charge, or the like. A valve element 5 is provided with a slit 3 between the circumference thereof and a metal substrate 1. When the internal pressure of a battery is elevated, the valve element 5 is smoothly raised up together with a metal foil 2 from a bending fulcrum portion 4 to thereby cut a lead wire 6 or permit a braze portion 8 to detach from the lead wire 6, thus disconnecting the current reliably. Then, the metal foil which usually closes the slit formed around the circumference of the valve element 5 is allowed to burst stably and accurately at a prescribed pressure to thereby form a valve opening portion 7 so that the internal gas of the battery can be discharged.

    摘要翻译： 本发明的目的是提供一种能够快速释放其内部压力并且同时断开电流以有效防止其升高和爆炸的封闭电池，使得在这种完全闭合的电池中可确保安全性 当内部压力由于短路，过充电，反向充电等而升高时的可靠性。 阀元件5在其周边和金属基板1之间设置有狭缝3。当电池的内部压力升高时，阀元件5与金属箔2一起从弯曲支点部分4平滑地升起 从而切断引线6，或者使钎焊部8与引线6分离，从而可靠地断开电流。 然后，通过闭合形成在阀体5的周围的狭缝的金属箔，能够在规定的压力下稳定而准确地突出，从而形成阀开口部7，从而能够排出电池的内部气体。

    Physical sensor
    10.
    发明授权
    Physical sensor 失效
    物理传感器

    公开(公告)号：US08146426B2

    公开(公告)日：2012-04-03

    申请号：US12318186

    申请日：2008-12-23

    申请人： Kazuhiko Sugiura ,  Yoshihiko Isobe

    发明人： Kazuhiko Sugiura ,  Yoshihiko Isobe

    IPC分类号： G01P15/125 ,  G01P9/04 ,  G01C19/56

    CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/082

    摘要： A physical sensor includes: a substrate having a silicon layer, an oxide film and a support layer; and a sensor portion having movable and fixed electrodes and a lower electrode. The movable electrode is supported by a beam on the support layer. The fixed electrode faces the movable electrode. The lower electrode is disposed on the support layer and faces the movable electrode. The physical sensor detects horizontal physical quantity based on a capacitance between the movable and fixed electrodes, and vertical physical quantity based on a capacitance between the movable and lower electrodes. The beam includes vertical and horizontal beams. The thickness of the vertical beam is smaller than the thickness of the horizontal beam.

    摘要翻译： 物理传感器包括：具有硅层，氧化膜和支撑层的衬底; 以及具有可移动和固定电极的传感器部分和下部电极。 可动电极由支撑层上的梁支撑。 固定电极面向可动电极。 下电极设置在支撑层上并面向可动电极。 物理传感器基于可移动和固定电极之间的电容以及基于可动电极和下电极之间的电容的垂直物理量来检测水平物理量。 梁包括垂直和水平梁。 垂直梁的厚度小于水平梁的厚度。