公开(公告)号：US20220293489A1

公开(公告)日：2022-09-15

申请号：US17607942

申请日：2020-04-30

申请人： Danfoss Silicon Power GmbH

发明人： Stefan Behrendt ,  Ronald Eisele

IPC分类号： H01L23/473

摘要： The invention relates to a power electronics module including a first circuit carrier (5,10, 11), as well as an electronic assembly (20, 30) arranged in an electrically contacting manner on the upper flat side of the first circuit carrier (5, 10, 11), and a first cooling element (40) in thermal contact with the underside of the first circuit carrier (5, 10, 11), wherein the module has at least one second assembly (20, 30) arranged on the upper side of a second circuit carrier (5, 10, 11) and a second cooling element (40) arranged on the underside of the second circuit carrier (5, 10, 11), wherein the first and the second circuit carriers (5, 10, 11) are arranged with their upper sides facing one another and at least one central heat sink (60, 61, 63, 64) that is electrically insulated from the assemblies (20, 30) is arranged in the space between the assemblies (20, 30), wherein the assemblies (20, 30) and the at least one central heat sink (60, 61, 63, 64) are embedded in a heat-conducting potting compound (50), wherein the module has a number N≥3 of circuit carriers (5, 10, 11) with assemblies (20, 30) mounted on their upper sides and cooling elements (40) mounted on their undersides, and the sides having the assemblies (20, 30) and directed towards one another are arranged around the central heat sink (60, 61, 63, 64) forming a shape with an N-sided polygon as across-section.

公开(公告)号：US20220157773A1

公开(公告)日：2022-05-19

申请号：US17435752

申请日：2020-02-27

申请人： DANFOSS SILICON POWER GMBH

发明人： Martin Becker ,  Dirk Dittmann

IPC分类号： H01L23/00 ,  H05K3/32

摘要： A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.

公开(公告)号：US10832995B2

公开(公告)日：2020-11-10

申请号：US16513919

申请日：2019-07-17

申请人： Danfoss Silicon Power GmbH

发明人： Ronald Eisele ,  Frank Osterwald

IPC分类号： H01L21/56 ,  H01L23/495 ,  H01L23/29 ,  H01L23/433 ,  H01L23/31

摘要： A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate(40).

公开(公告)号：US10796985B2

公开(公告)日：2020-10-06

申请号：US15628794

申请日：2017-06-21

申请人： Danfoss Silicon Power GmbH

发明人： Holger Beer ,  Lars Paulsen

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/00

摘要： A lead frame is provided, including one or more power terminals and one or more control terminals, wherein at least one of the control terminals is externally terminated with a press-fit contact member, and wherein at least one of the control terminals and at least one power terminals are formed from different materials. With the disclosed lead frame of the invention, lower material cross sections in the power terminals will be provided because of the better electrical conductivity when using pure copper compared to alloys with higher mechanical strengths. Also specific/different plating could be added to the individual needs of the different pin types without using masks in the plating process.

公开(公告)号：US10403566B2

公开(公告)日：2019-09-03

申请号：US15544689

申请日：2016-01-29

申请人： DANFOSS SILICON POWER GMBH

发明人： Ronald Eisele ,  Frank Osterwald

IPC分类号： H01L23/495 ,  H01L23/29 ,  H01L23/433 ,  H01L23/31 ,  H01L21/56

摘要： A power module (10) having a leadframe (20), a power semiconductor (30) arranged on the leadframe (20), a base plate (40) for dispersing heat generated by the power semiconductor (30) and a potting compound (50) surrounding the leadframe (20) and the power semiconductor (30), that physically connects the power semiconductor (30) and/or the leadframe (20) to the base plate (40).

公开(公告)号：US20170216920A1

公开(公告)日：2017-08-03

申请号：US15514571

申请日：2015-09-09

申请人： DANFOSS SILICON POWER GMBH

发明人： Frank Osterwald ,  Martin Becker ,  Lars Paulsen ,  Jacek Rudzki ,  Holger Ulrich ,  Ronald Eisele

IPC分类号： B22F3/14 ,  B22F5/00 ,  H01L23/00

摘要： Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

公开(公告)号：US09287232B2

公开(公告)日：2016-03-15

申请号：US13148848

申请日：2010-02-04

申请人： Mathias Kock ,  Ronald Eisele

发明人： Mathias Kock ,  Ronald Eisele

IPC分类号： B23K1/20 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L24/33 ,  H01L24/27 ,  H01L24/29 ,  H01L24/34 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/27505 ,  H01L2224/29101 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83193 ,  H01L2224/83207 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8484 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/01007 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/37099

摘要： The invention relates to a method for producing a connection between a semiconductor component and semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has been solidified at zero pressure using temperature sintering.

摘要翻译： 本发明涉及一种用于通过温度冲击工艺制造半导体部件和半导体部件与耐高温和温度变化的半导体组件之间的连接的方法，其中将金属粉末悬浮液施加到半导体模块的区域 稍后连接 将悬浮液层干燥，除去挥发性成分，生成多孔层; 多孔层预先密封，没有完全烧结发生在整个悬浮层中; 并且为了获得半导体模块与基板，另外的半导体或互连装置的连接伙伴的固体导电和导热连接，该连接是通过增加温度而不压缩产生的烧结连接，并由 在预压缩步骤中已经与连接伙伴进行第一次运输安全接触并在零压力下使用温度烧结固化的干燥的金属粉末悬浮液。

公开(公告)号：US08802564B2

公开(公告)日：2014-08-12

申请号：US13460939

申请日：2012-05-01

申请人： Mathias Kock ,  Ronald Eisele

发明人： Mathias Kock ,  Ronald Eisele

IPC分类号： H01L21/44

CPC分类号： H01L21/568 ,  C23C4/01 ,  C23C4/02 ,  C23C4/134 ,  C23C4/18 ,  H01L21/561 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/93 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03418 ,  H01L2224/03442 ,  H01L2224/03444 ,  H01L2224/056 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/00014 ,  H01L2224/03

摘要： A method of manufacturing a semiconductor component includes the steps of manufacturing of a wafer, applying structures of components on the wafer to form a wafer assembly, applying a metal coating on the wafer, removing the metal coating in non-contact areas of the components, applying surrounds on the edge areas of the components, arranging the wafer on a foil held by a clamping ring, separating the components of the wafer compound carried by the foil from one another, arranging a covering mask on the areas of the separated components carried by the foil which are not to be coated, applying a metal coating on the separate components covered with the mask, removal of the mask, and removal of the components from the foil and further processing the separate components wherein that applying a metal coating on the separate components covered by the mask takes place by means of thermal spraying.

摘要翻译： 制造半导体部件的方法包括以下步骤：制造晶片，在晶片上施加部件结构以形成晶片组件，在晶片上施加金属涂层，去除部件非接触区域中的金属涂层， 在组件的边缘区域上施加周围环境，将晶片布置在由夹紧环保持的箔上，将由箔承载的晶片化合物的组分彼此分离，将覆盖掩模布置在由 不要被涂覆的箔，在被掩模覆盖的单独部件上施加金属涂层，去除掩模，以及从箔中去除组分并进一步处理单独的部件，其中在单独的部件上施加金属涂层 掩模覆盖的部件通过热喷涂进行。

公开(公告)号：US20130032230A1

公开(公告)日：2013-02-07

申请号：US13640581

申请日：2011-04-08

申请人： Klaus Olesen ,  Lars Paulsen ,  Andre Daniel ,  Frank Osterwald

发明人： Klaus Olesen ,  Lars Paulsen ,  Andre Daniel ,  Frank Osterwald

IPC分类号： F16L41/00

CPC分类号： H01L23/473 ,  H01L2924/0002 ,  Y10T137/85938 ,  H01L2924/00

摘要： A flow distributor for distributing a flow of fluid through a cooling body, the flow distributor comprising: an inlet manifold; an outlet manifold; and one or more flow cells, each being arranged to fluidly interconnect the inlet manifold and the outlet manifold, each flow cell comprising a cell inlet in fluid communication with the inlet manifold, a cell outlet in fluid communication with the outlet manifold, and a flow channel for guiding a flow of fluid from the cell inlet to the cell outlet, wherein the flow distributor is formed within a solid layer which is bonded directly to an insulating layer to be cooled.

摘要翻译： 一种用于分配流体流过冷却体的流量分配器，所述流量分配器包括：入口歧管; 出口歧管 以及一个或多个流动池，每个流动池被布置成流体地互连入口歧管和出口歧管，每个流动池包括与入口歧管流体连通的电池入口，与出口歧管流体连通的电池出口，以及流 用于引导流体从细胞入口到细胞出口的通道，其中流动分配器形成在直接结合到要冷却的绝缘层的固体层中。

公开(公告)号：US20120037688A1

公开(公告)日：2012-02-16

申请号：US13148848

申请日：2010-02-04

申请人： Mathias Kock ,  Ronald Eisele

发明人： Mathias Kock ,  Ronald Eisele

IPC分类号： B23K1/20 ,  B23K31/02

CPC分类号： H01L24/33 ,  H01L24/27 ,  H01L24/29 ,  H01L24/34 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/27505 ,  H01L2224/29101 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83193 ,  H01L2224/83207 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8484 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/01007 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/37099

摘要： The invention relates to a method for producing a connection between a semiconductor component and semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has been solidified at zero pressure using temperature sintering.

摘要翻译： 本发明涉及一种用于通过温度冲击工艺制造半导体部件和半导体部件与耐高温和温度变化的半导体组件之间的连接的方法，其中将金属粉末悬浮液施加到半导体模块的区域 稍后连接 将悬浮液层干燥，除去挥发性成分，生成多孔层; 多孔层预先密封，没有完全烧结发生在整个悬浮层中; 并且为了获得半导体模块与基板，另外的半导体或互连装置的连接伙伴的固体导电和导热连接，该连接是通过增加温度而不压缩而产生的烧结连接，并由 在预压缩步骤中已经与连接伙伴进行第一次运输安全接触并在零压力下使用温度烧结固化的干燥的金属粉末悬浮液。