公开(公告)号：US08258633B2

公开(公告)日：2012-09-04

申请号：US12750969

申请日：2010-03-31

申请人： Recai Sezi ,  Thorsten Meyer

发明人： Recai Sezi ,  Thorsten Meyer

IPC分类号： H01L23/498 ,  H01L21/56 ,  H01L23/28

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/03442 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2224/96 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A polymer layer is generated on a wafer. The wafer is then separated into semiconductor chips. At least two semiconductor chips are placed on a carrier with the polymer layer facing the carrier. The at least two semiconductor chips are covered with an encapsulating material to form an encapsulant. The carrier is removed from the encapsulant, and the encapsulant and the polymer layer are thinned.

摘要翻译： 在晶片上产生聚合物层。 然后将晶片分离成半导体芯片。 将至少两个半导体芯片放置在载体上，聚合物层面向载体。 至少两个半导体芯片被封装材料覆盖以形成密封剂。 载体从密封剂中除去，密封剂和聚合物层变薄。

公开(公告)号：US20110241222A1

公开(公告)日：2011-10-06

申请号：US12750969

申请日：2010-03-31

申请人： Recai Sezi ,  Thorsten Meyer

发明人： Recai Sezi ,  Thorsten Meyer

IPC分类号： H01L23/498 ,  H01L21/56 ,  H01L23/28

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/03442 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2224/96 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A polymer layer is generated on a wafer. The wafer is then separated into semiconductor chips. At least two semiconductor chips are placed on a carrier with the polymer layer facing the carrier. The at least two semiconductor chips are covered with an encapsulating material to form an encapsulant. The carrier is removed from the encapsulant, and the encapsulant and the polymer layer are thinned.

摘要翻译： 在晶片上产生聚合物层。 然后将晶片分离成半导体芯片。 将至少两个半导体芯片放置在载体上，聚合物层面向载体。 至少两个半导体芯片被封装材料覆盖以形成密封剂。 载体从密封剂中除去，密封剂和聚合物层变薄。

公开(公告)号：US20040137724A1

公开(公告)日：2004-07-15

申请号：US10744849

申请日：2003-12-22

申请人： Fairchild Semiconductor Corporation

发明人： Rajeev Joshi ,  Chung-Lin Wu

IPC分类号： H01L021/44

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03442 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2924/013

摘要： A method for processing a semiconductor substrate is disclosed. The method includes providing a mask having an aperture on a semiconductor substrate having a conductive region. An aperture in the mask is disposed over the conductive region. A pre-formed conductive column is placed in the aperture and is bonded to the conductive region.

公开(公告)号：US10059827B2

公开(公告)日：2018-08-28

申请号：US15148320

申请日：2016-05-06

申请人： Alpha Assembly Solutions Inc.

发明人： Rajan Hariharan ,  James Hurley ,  Senthil Kanagavel ,  Jose Quinones ,  Martin Sobczak ,  Deborah Makita

IPC分类号： C08K5/09 ,  B23K35/36 ,  H01B1/22 ,  H01L23/498 ,  H01L23/492 ,  H05K7/02 ,  C08K3/08 ,  H01L23/04 ,  H01L23/31 ,  H01L23/00 ,  B23K101/36

CPC分类号： C08K5/09 ,  B23K35/3612 ,  B23K2101/36 ,  C08K3/08 ,  C08K2003/0806 ,  C08K2003/0837 ,  C08K2003/085 ,  H01B1/22 ,  H01L23/04 ,  H01L23/3178 ,  H01L23/4928 ,  H01L23/49883 ,  H01L24/80 ,  H01L2224/03332 ,  H01L2224/03442 ,  H01L2224/80011 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

摘要： A conductive composition includes a mono-acid hybrid that includes an unprotected, single reactive group. The mono-acid hybrid may include substantially non-reactive groups elsewhere such that the mono-acid hybrid is functional as a chain terminator. Methods and devices using the compositions are also disclosed.

公开(公告)号：US20150048510A1

公开(公告)日：2015-02-19

申请号：US14383915

申请日：2013-04-22

申请人： DENSO CORPORATION

发明人： Manabu Tomisaka ,  Yoshifumi Okabe ,  Mikimasa Suzuki

IPC分类号： H01L23/00 ,  H01L21/288 ,  H01L21/02

CPC分类号： H01L24/05 ,  H01L21/02521 ,  H01L21/288 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03332 ,  H01L2224/03442 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/03505 ,  H01L2224/03602 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05255 ,  H01L2224/05355 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05755 ,  H01L2224/05855 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/01022 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a semiconductor substrate and a metal film formed on the semiconductor substrate. The metal film includes a Ni base and a material having condensation energy higher than that of Ni. In a method of manufacturing a semiconductor device, a semiconductor substrate and a target, which is formed by melting P in Ni, are prepared, and sputtering is performed with the target while a portion of the semiconductor substrate where the metal film is to be formed is heated to a temperature of from 280° C. inclusive to 870° C. inclusive.

摘要翻译： 半导体器件包括形成在半导体衬底上的半导体衬底和金属膜。 金属膜包括Ni基和具有比Ni更高的冷凝能力的材料。 在制造半导体器件的方法中，制备通过熔化Ni中的P形成的半导体衬底和靶，并且在要形成金属膜的半导体衬底的一部分的同时用靶进行溅射 被加热至包括280℃在内的温度至870℃。

公开(公告)号：US20120282772A1

公开(公告)日：2012-11-08

申请号：US13460939

申请日：2012-05-01

申请人： Mathias Kock ,  Ronald Eisele

发明人： Mathias Kock ,  Ronald Eisele

IPC分类号： H01L21/283

CPC分类号： H01L21/568 ,  C23C4/01 ,  C23C4/02 ,  C23C4/134 ,  C23C4/18 ,  H01L21/561 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/93 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03418 ,  H01L2224/03442 ,  H01L2224/03444 ,  H01L2224/056 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/00014 ,  H01L2224/03

摘要： A method of manufacturing a semiconductor component includes the steps of manufacturing of a wafer, applying structures of components on the wafer to form a wafer assembly, applying a metal coating on the wafer, removing the metal coating in non-contact areas of the components, applying surrounds on the edge areas of the components, arranging the wafer on a foil held by a clamping ring, separating the components of the wafer compound carried by the foil from one another, arranging a covering mask on the areas of the separated components carried by the foil which are not to be coated, applying a metal coating on the separate components covered with the mask, removal of the mask, and removal of the components from the foil and further processing the separate components wherein that applying a metal coating on the separate components covered by the mask takes place by means of thermal spraying.

摘要翻译： 制造半导体部件的方法包括以下步骤：制造晶片，在晶片上施加部件结构以形成晶片组件，在晶片上施加金属涂层，去除部件非接触区域中的金属涂层， 在组件的边缘区域上施加周围环境，将晶片布置在由夹紧环保持的箔上，将由箔承载的晶片化合物的组分彼此分离，将覆盖掩模布置在由 不要被涂覆的箔，在被掩模覆盖的单独部件上施加金属涂层，去除掩模，以及从箔中去除组分并进一步处理单独的部件，其中在单独的部件上施加金属涂层 掩模覆盖的部件通过热喷涂进行。

公开(公告)号：US20020192935A1

公开(公告)日：2002-12-19

申请号：US09881787

申请日：2001-06-15

发明人： Rajeev Joshi ,  Chung-Lin Wu

IPC分类号： H01L021/44

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03442 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2924/013

摘要： A method for processing a semiconductor substrate is disclosed. The method includes providing a mask having an aperture on a semiconductor substrate having a conductive region. An aperture in the mask is disposed over the conductive region. A pre-formed conductive column is placed in the aperture and is bonded to the conductive region.

摘要翻译： 公开了一种处理半导体衬底的方法。 该方法包括在具有导电区域的半导体衬底上提供具有孔的掩模。 掩模中的孔设置在导电区上。 将预先形成的导电柱放置在孔中并结合到导电区。

公开(公告)号：US20160251495A1

公开(公告)日：2016-09-01

申请号：US15148320

申请日：2016-05-06

申请人： Alpha Metals, Inc.

发明人： Rajan Hariharan ,  James Hurley ,  Senthil Kanagavel ,  Jose Quinones ,  Martin Sobczak ,  Deborah Makita

IPC分类号： C08K5/09 ,  C08K3/08 ,  H01L23/31 ,  H01L23/00 ,  H01L23/04

CPC分类号： C08K5/09 ,  B23K35/3612 ,  B23K2101/36 ,  C08K3/08 ,  C08K2003/0806 ,  C08K2003/0837 ,  C08K2003/085 ,  H01B1/22 ,  H01L23/04 ,  H01L23/3178 ,  H01L23/4928 ,  H01L23/49883 ,  H01L24/80 ,  H01L2224/03332 ,  H01L2224/03442 ,  H01L2224/80011 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

摘要： A conductive composition includes a mono-acid hybrid that includes an unprotected, single reactive group. The mono-acid hybrid may include substantially non-reactive groups elsewhere such that the mono-acid hybrid is functional as a chain terminator. Methods and devices using the compositions are also disclosed.

摘要翻译： 导电组合物包括单酸混合物，其包含未被保护的单个反应性基团。 单酸杂化物可以在其他地方包括基本上非反应性基团，使得单酸杂合物作为链终止剂起作用。 还公开了使用该组合物的方法和装置。

公开(公告)号：US09355938B2

公开(公告)日：2016-05-31

申请号：US14058553

申请日：2013-10-21

申请人： ALPHA METALS, INC.

发明人： Rajan Hariharan ,  James Hurley ,  Senthil Kanagavel ,  Jose Quinones ,  Martin Sobczak ,  Deborah Makita

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H05K5/00 ,  H05K7/00 ,  H01B1/02 ,  H01B1/22 ,  C09K5/00 ,  H01L23/492 ,  B23K35/36 ,  H01L23/498 ,  H05K7/02 ,  C08K5/09

CPC分类号： C08K5/09 ,  B23K35/3612 ,  B23K2101/36 ,  C08K3/08 ,  C08K2003/0806 ,  C08K2003/0837 ,  C08K2003/085 ,  H01B1/22 ,  H01L23/04 ,  H01L23/3178 ,  H01L23/4928 ,  H01L23/49883 ,  H01L24/80 ,  H01L2224/03332 ,  H01L2224/03442 ,  H01L2224/80011 ,  H01L2924/0002 ,  H05K7/02 ,  H01L2924/00

摘要： A conductive composition includes a mono-acid hybrid that includes an unprotected, single reactive group. The mono-acid hybrid may include substantially non-reactive groups elsewhere such that the mono-acid hybrid is functional as a chain terminator. Methods and devices using the compositions are also disclosed.

摘要翻译： 导电组合物包括单酸混合物，其包含未被保护的单个反应性基团。 单酸杂化物可以在其他地方包括基本上非反应性基团，使得单酸杂合物作为链终止剂起作用。 还公开了使用该组合物的方法和装置。

公开(公告)号：US09053972B1

公开(公告)日：2015-06-09

申请号：US14086932

申请日：2013-11-21

申请人： Chee Seng Foong ,  Lan Chu Tan

发明人： Chee Seng Foong ,  Lan Chu Tan

IPC分类号： H01L21/48 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03442 ,  H01L2224/0345 ,  H01L2224/03505 ,  H01L2224/03552 ,  H01L2224/0381 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11505 ,  H01L2224/11552 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11825 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13166 ,  H01L2224/13562 ,  H01L2224/13566 ,  H01L2224/136 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2924/01024 ,  H01L2224/11442 ,  H01L2924/014 ,  H01L2924/00

摘要： A pillar bump, such as a copper pillar bump, is formed on an integrated circuit chip by applying a metallic powder over a conductive pad on a surface of the chip. The metallic powder is selectively spot-lasered to form the pillar bump. Any remaining unsolidified metallic powder may be removed from the surface of the chip. This process may be repeated to increase the bump height. Further, a solder cap may be formed on an outer surface of the pillar bump.

摘要翻译： 通过在芯片的表面上的导电焊盘上施加金属粉末，在集成电路芯片上形成诸如铜柱凸起的柱状凸块。 选择性地点燃金属粉末以形成柱状凸块。 任何剩余的非固化金属粉末可以从芯片的表面去除。 可以重复该过程以增加凸起高度。 此外，可以在柱状凸起的外表面上形成焊锡帽。