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公开(公告)号：US10818633B2
公开(公告)日：2020-10-27
申请号：US15514622
申请日：2015-09-09
发明人： Frank Osterwald , Ronald Eisele , Martin Becker , Jacek Rudzki , Lars Paulsen , Holger Ulrich
摘要： Tool (10) for the lower die of a sintering device, the tool (10) having a rest (20) for an electronic subassembly (30) comprising a circuit carrier, to be sintered, where the rest (20) is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly (30).
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公开(公告)号：US10483229B2
公开(公告)日：2019-11-19
申请号：US15514548
申请日：2015-09-09
发明人： Frank Osterwald , Ronald Eisele , Martin Becker , Lars Paulsen , Jacek Rudzki , Holger Ulrich
摘要： Sintering device for sintering at least one electronic assembly, having a lower die and an upper die which is slidable towards the lower die, or a lower die which is slidable towards the upper die. The lower die forms a support for the assembly to be sintered and the upper die includes a receptacle for a pressure pad for exerting pressure directed towards the lower die, and a delimitation wall which laterally surrounds the pressure pad. The delimitation wall having an outer delimitation wall and an inner delimitation wall surrounded by the outer delimitation wall, the inner delimitation wall mounted so as to be slidable towards the outer delimitation wall and so as to be slid in the direction of the lower die such that, following the placing of the inner delimitation wall on the lower die, the pressure pad is displaceable in the direction of the lower die.
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公开(公告)号：US10438924B2
公开(公告)日：2019-10-08
申请号：US15581010
申请日：2017-04-28
发明人： Martin Becker , Ronald Eisele , Frank Osterwald , Jacek Rudzki , Holger Ulrich
IPC分类号： H01L23/00 , B23K20/02 , B23K101/40
摘要： A method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module by sintering, the method comprising the steps of: applying a layer of unsintered sinter material to a predetermined bonding surface of the first component, arranging the second component on the surface layer of unsintered sinter material, attaching the second component to the first component by applying pressure and/or temperature on a locally delimited partial area within the predetermined bonding surface, processing the first and/or second component and/or other components of the power semiconductor module, and complete-area sintering of the sinter material.
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公开(公告)号：US20170221852A1
公开(公告)日：2017-08-03
申请号：US15514622
申请日：2015-09-09
发明人： Frank Osterwald , Ronald Eisele , Martin Becker , Jacek Rudzki , Lars Paulsen , Holger Ulrich
摘要： Tool (10) for the lower die of a sintering device, the tool (10) having a rest (20) for an electronic subassembly (30) comprising a circuit carrier, to be sintered, where the rest (20) is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly (30).
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5.发明授权公开(公告)号：US10332858B2
公开(公告)日：2019-06-25
申请号：US15524038
申请日：2015-10-30
发明人： Martin Becker , Ronald Eisele , Jacek Rudzki , Frank Osterwald
IPC分类号： H01L23/00
摘要： An electronic sandwich structure which has at least a first and a second part to be joined, which are sintered together by means of a sintering layer. The sintering layer is formed as a substantially uninterrupted connecting layer, the density of which varies in such a way that at least one region of higher density and at least one region of lower density alternate with one another. A method for forming a sintering layer of an electronic sandwich structure, in which firstly a sintering material layer is applied substantially continuously to a first part to be joined as a connecting layer, this sintering material layer is subsequently dried and, finally, alternating regions of higher density and of lower density of the connecting layer are produced by sintering the first part to be joined with the sintering layer on a second part to be joined.
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公开(公告)号：US10079219B2
公开(公告)日：2018-09-18
申请号：US15523998
申请日：2015-10-12
发明人： Martin Becker , Ronald Eisele , Frank Osterwald , Jacek Rudzki
CPC分类号： H01L24/45 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/85 , H01L2224/03334 , H01L2224/03505 , H01L2224/04042 , H01L2224/05017 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/0518 , H01L2224/05184 , H01L2224/32225 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4554 , H01L2224/48491 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/4888 , H01L2224/48884 , H01L2224/8384 , H01L2224/85238 , H01L2224/85365 , H01L2924/00014 , H01L2924/181 , H01L2924/00015 , H01L2924/00012 , H01L2924/00 , H01L2924/206 , H01L2224/43848
摘要： A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal molded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal molded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal molded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.
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公开(公告)号：US20180240776A1
公开(公告)日：2018-08-23
申请号：US15751984
申请日：2016-07-26
发明人： Frank Osterwald , Martin Becker , Holger Ulrich , Ronald Eisele , Jacek Rudzki
IPC分类号： H01L23/00
CPC分类号： H01L24/94 , H01L24/92 , H01L24/97 , H01L2224/291 , H01L2224/32225 , H01L2224/48491 , H01L2224/83002 , H01L2224/83447 , H01L2224/8384 , H01L2224/83986 , H01L2224/9221 , H01L2224/9222 , H01L2224/94 , H01L2224/97 , H01L2924/00014
摘要： A method for manufacturing semiconductor chips (2, 3) having arranged thereon metallic shaped bodies (6), having the following steps: arranging a plurality of metallic shaped bodies (6) on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (6), exhibiting a first connection material (4) and a second connection material (5), and processing the first connection material (4) for connecting the metallic shaped bodies (6) to the semiconductor wafer without processing the second connecting material (5), wherein the semiconductor chips (2, 3) are separated either prior to arranging the metallic shaped bodies (6) on the semiconductor wafer or after processing the first connection material (4).
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公开(公告)号：US20220157773A1
公开(公告)日：2022-05-19
申请号：US17435752
申请日：2020-02-27
发明人： Martin Becker , Dirk Dittmann
摘要： A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.
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9.发明申请公开(公告)号：US20180331065A1
公开(公告)日：2018-11-15
申请号：US15524038
申请日：2015-10-30
发明人： Martin Becker , Ronald Eisele , Jacek Rudzki , Frank Osterwald
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/05639 , H01L2224/27312 , H01L2224/27318 , H01L2224/2732 , H01L2224/27418 , H01L2224/27848 , H01L2224/29012 , H01L2224/29017 , H01L2224/29019 , H01L2224/29294 , H01L2224/29339 , H01L2224/3201 , H01L2224/32245 , H01L2224/8384 , H01L2924/351 , H01L2924/00012 , H01L2924/00014
摘要： A description is given of an electronic sandwich structure which has at least a first and a second part to be joined, which are sintered together by means of a sintering layer. The sintering layer is formed as a substantially uninterrupted connecting layer, the density of which varies in such a way that at least one region of higher density and at least one region of lower density alternate with one another. A description is also given of a method for forming a sintering layer of an electronic sandwich structure, in which firstly a sintering material layer is applied substantially continuously to a first part to be joined as a connecting layer, this sintering material layer is subsequently dried and, finally, alternating regions of higher density and of lower density of the connecting layer are produced by sintering the first part to be joined with the sintering layer on a second part to be joined.
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公开(公告)号：US20170317049A1
公开(公告)日：2017-11-02
申请号：US15523998
申请日：2015-10-12
发明人： Martin Becker , Ronald Eisele , Frank Osterwald , Jacek Rudzki
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/85 , H01L2224/03334 , H01L2224/03505 , H01L2224/04042 , H01L2224/05017 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/0518 , H01L2224/05184 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4554 , H01L2224/48491 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/4888 , H01L2224/48884 , H01L2224/85238 , H01L2224/85365 , H01L2924/181 , H01L2924/00015 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal moulded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal moulded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal moulded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal moulded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.
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