Method of production of lactam
    11.
    发明申请
    Method of production of lactam 失效
    内酰胺的生产方法

    公开(公告)号:US20030088093A1

    公开(公告)日:2003-05-08

    申请号:US10285571

    申请日:2002-11-01

    CPC classification number: C07D201/04 Y02P20/582

    Abstract: A method for producing a lactam by using an organic solvent as a substrate solution, which makes it possible to introduce a high-concentration oxime into flowing high-temperature and high-pressure water, thereby allowing the high-concentration lactam to be synthesized with a high efficiency. With this method, the lactam is continuously synthesized at a high rate from the oxime under high-temperature and high-pressure water mixture conditions within a temperature range of no less than 250null C. and a pressure range of no less than 15 MPa.

    Abstract translation: 通过使用有机溶剂作为底物溶液制备内酰胺的方法,可以将高浓度肟引入流动的高温高压水中,从而使高浓度的内酰胺与 高效率。 通过该方法,在不低于250℃的温度范围和不低于15MPa的压力范围内,在高温和高压水混合条件下,从肟连续合成内酰胺。

    Method and apparatus for inspecting multilayer masks for defects
    12.
    发明申请
    Method and apparatus for inspecting multilayer masks for defects 有权
    检查多层掩模缺陷的方法和装置

    公开(公告)号:US20030067598A1

    公开(公告)日:2003-04-10

    申请号:US10263699

    申请日:2002-10-04

    Inventor: Toshihisa Tomie

    Abstract: A method for inspecting multilayer masks to detect any defects includes illuminating a pixel region on a mask to be inspected, using illuminating light having a peak wavelength that is close to that of light reflected by the mask. The illuminating light specularly reflected by the mask is blocked Scattered reflected illuminating light is collected and used to form an enlarged image. An image detector having a large plurality of pixels is used to observe the enlarged image to detect whether there are defects on the mask. The method is implemented using an mask inspection apparatus including a plasma light source for generating radiant rays, an illuminating light collecting optical system that collects radiated light from the light source for enlarged image formation illumination of a subject inspection region, a Schwarzschild optical system including convex and concave mirrors for collecting scattered light from the subject inspection region and forming an enlarged image of the inspection region, an image detector having a large plurality of pixels for recording the enlarged image that is obtained, and an analyzer that analyzes the images obtained to determine whether there is a defect.

    Abstract translation: 用于检查多层掩模以检测任何缺陷的方法包括使用具有接近由掩模反射的光的峰值波长的照明光照射待检查的掩模上的像素区域。 由掩模镜面反射的照明光被遮蔽散射的反射照明光被收集并用于形成放大的图像。 使用具有大量多个像素的图像检测器来观察放大图像以检测掩模上是否存在缺陷。 该方法使用包括用于产生辐射线的等离子体光源的掩模检查装置来实现,收集来自光源的辐射光以用于对象检查区域的放大图像形成照明的照明聚光光学系统,包括凸起的施瓦茨光学系统 以及用于收集来自被检查区域的散射光并形成检查区域的放大图像的凹面镜,具有用于记录所获得的放大图像的大量多个像素的图像检测器,以及分析器,其分析所获得的图像以确定 是否存在缺陷。

    Manufacturing method of semiconductor devices
    13.
    发明申请
    Manufacturing method of semiconductor devices 有权
    半导体器件的制造方法

    公开(公告)号:US20030013266A1

    公开(公告)日:2003-01-16

    申请号:US10101318

    申请日:2002-03-20

    CPC classification number: H01L21/049 H01L29/045 H01L29/1608 Y10S438/931

    Abstract: A semiconductor device is manufactured using a SiC substrate. On a semiconductor region a region formed of SiC having an (11-20) face orientation is formed. A gate insulation layer is a gate oxidation layer. The surface of the semiconductor region is cleaned, and the gate insulation layer is formed in an atmosphere containing hydrogen or water vapor After the gate insulation layer has been formed, the substrate is heat-treated in an atmosphere containing hydrogen or water vapor. This reduces the interface-trap and the semiconductor region.

    Abstract translation: 使用SiC衬底制造半导体器件。 在半导体区域形成由具有(11-20)面取向的SiC形成的区域。 栅极绝缘层是栅极氧化层。 半导体区域的表面被清洁,并且在包含氢或水蒸气的气氛中形成栅极绝缘层。在形成栅极绝缘层之后,将衬底在含有氢或水蒸气的气氛中进行热处理。 这减少了界面陷阱和半导体区域。

    Polygon-type semiconductor detector for use in high-speed X-ray CT, and manufacturing method therefor
    14.
    发明申请
    Polygon-type semiconductor detector for use in high-speed X-ray CT, and manufacturing method therefor 审中-公开
    用于高速X射线CT的多边形半导体检测器及其制造方法

    公开(公告)号:US20020123187A1

    公开(公告)日:2002-09-05

    申请号:US10058416

    申请日:2002-01-30

    Inventor: Masaki Misawa

    CPC classification number: G01T1/2985

    Abstract: The polygon-type semiconductor detector for use in a high-speed X-ray CT according to the present invention enables a high resolution, and allows the time and cost for manufacturing to be significantly reduced, by virtue of the detection pixel group thereof having mutually homogeneous characteristics. First, X-ray modules are each constructed by arranging a plurality of X-ray detection pixels (4) formed by means of photolithography in a line on a single planar semiconductor substrate constituted of CdTe. Then, by polygonally arranging a plurality of these X-ray modules on the circumference of a measuring section around a measuring area, this polygon-type semiconductor detector is formed. Thereby, when a multiphase fluid having mutually different densities flows in the measuring area (10), this polygon-type semiconductor detector can acquire the projection data of internal density distributions at a high speed.

    Abstract translation: 根据本发明的用于高速X射线CT的多边形半导体检测器能够实现高分辨率,并且由于具有相互的检测像素组,可以显着地减少制造的时间和成本 均质特性。 首先,通过在由CdTe构成的单个平面状半导体基板上的一行中配置通过光刻形成的多个X射线检测像素(4)来构成X射线模块。 然后,通过在测量区域周围的测量区域的圆周上多个排列多个X射线模块,形成该多边形半导体检测器。 因此,当在测量区域(10)中流动具有相互不同的密度的多相流体时,该多边形半导体检测器可以高速获取内部密度分布的投影数据。

    Input and output control means for computer system storage and a software execution method using same
    15.
    发明申请
    Input and output control means for computer system storage and a software execution method using same 失效
    用于计算机系统存储的输入和输出控制装置和使用它的软件执行方法

    公开(公告)号:US20040078636A1

    公开(公告)日:2004-04-22

    申请号:US10101097

    申请日:2002-03-20

    Inventor: Kuniyasu Suzaki

    CPC classification number: G06F21/53 G06F21/52 G06F21/566

    Abstract: The present invention provides an input and output device for computer system storage that can prevent a computer system being fatally damaged by a computer virus, and also provides a software execution method that by using the input and output device, enables trial software, trial data and mail data to be safely tried. For this, a virtual computer system is used that runs on a computer system. Writes to a hard disk in the virtual computer system are made via a disk cache, and whether or not data is transferred from the disk cache to the hard disk is controlled. Application program snapshot data created by the computer system is recorded on a recording medium that is substantially read-only or transmitted to a different computer system. The snapshot data from the recording medium is read or received by the different computer system and a processing by the application program is resumed in the state in which data transfer from the disk cache to the first storage has stopped.

    Abstract translation: 本发明提供了一种用于计算机系统存储的输入和输出装置,其可以防止计算机系统被计算机病毒致命地损坏,并且还提供了一种软件执行方法,其通过使用输入和输出设备,使试用软件,试用数据和 邮件数据安全尝试。 为此,使用在计算机系统上运行的虚拟计算机系统。 对虚拟计算机系统中的硬盘进行写入是通过磁盘缓存进行的,数据是否从磁盘缓存传输到硬盘。 由计算机系统创建的应用程序快照数据被记录在基本上只读或传送到不同计算机系统的记录介质上。 来自记录介质的快照数据被不同的计算机系统读取或接收,并且在从磁盘缓存到第一存储器的数据传送已经停止的状态下,应用程序的处理被恢复。

    Method of and apparatus for measuring and evaluating material strength by detecting charged particles
    16.
    发明申请
    Method of and apparatus for measuring and evaluating material strength by detecting charged particles 失效
    通过检测带电粒子来测量和评估材料强度的方法和装置

    公开(公告)号:US20030140710A1

    公开(公告)日:2003-07-31

    申请号:US10044956

    申请日:2002-01-15

    Abstract: The present invention is formed by detecting the charged particles generated during film peeling and fragility breaking, so that it is possible to specify a peel occurring time and a fragility breaking time, with a high sensitivity and a high accuracy. In this way, it becomes possible to correctly measure the peel strength and the fragility breaking strength. The method of the invention comprises the steps of pressing an indenter into a test object and measuring an indentation load as well as an indentation depth, while at the same time detecting charged particles omitted from a peel starting point or a breakage starting point; specifying a peel occurring time and a fragility breaking time when charged particles are increased; measuring a peel strength and/or a fragility breaking strength.

    Abstract translation: 本发明通过检测在膜剥离和脆性断裂期间产生的带电粒子形成,从而可以以高灵敏度和高精度指定剥离发生时间和脆性断裂时间。 以这种方式,可以正确地测量剥离强度和脆性断裂强度。 本发明的方法包括以下步骤:将压头压入测试对象并测量压痕负荷以及压痕深度,同时从剥离起点或断裂起点检测带电粒子; 指定带电粒子增加时的剥离发生时间和脆性断裂时间; 测量剥离强度和/或脆性断裂强度。

    Apparatus for measuring electromagnetic characteristics
    17.
    发明申请
    Apparatus for measuring electromagnetic characteristics 有权
    用于测量电磁特性的装置

    公开(公告)号:US20030122543A1

    公开(公告)日:2003-07-03

    申请号:US10298651

    申请日:2002-11-19

    CPC classification number: G01R33/02 G01R33/1215 Y10S505/846

    Abstract: An apparatus for measuring electromagnetic characteristics includes a sample rod with a sample fixed to a lower part thereof, a helium 3 refrigerator, in which the sample rod is inserted, having a main pipe that forms around the sample rod a space that is cooled by helium 3, a device for supplying helium 3 to the helium 3 refrigerator, an inner tube portion, into which the main pipe is inserted, that supports at an upper part thereof the refrigerator, an outer tube that cools an outer periphery of the inner tube with helium, a liquid helium container that supplies liquid helium to the outer tube, and a device for measuring the electromagnetic characteristics of the sample.

    Abstract translation: 一种用于测量电磁特性的装置包括:样品杆,其样品固定在其下部,氦3制冷器,其中插入样品棒,具有在试样棒周围形成空间的主管,该空间被氦冷却 3,用于向氦3制冷机供给氦3的装置,将主管插入其内部的内管部,在其上部支撑着冰箱,将内管的外周冷却的外管, 氦气,向外管供应液氦的液氦容器,以及用于测量样品的电磁特性的装置。

    Holding device
    18.
    发明申请

    公开(公告)号:US20030102640A1

    公开(公告)日:2003-06-05

    申请号:US10099979

    申请日:2002-03-19

    Inventor: Fuminori Saito

    Abstract: A holding device includes a support frame; multiple pairs of holding fixtures mounted on the support frame; a holding fixture pulley attached to one holding fixture of each one pair of holding fixtures; at least one frame pulley attached to the support frame; a drive rope bridging between the holding fixture pulley and the frame pulley and having one end pulled in one direction and the other end fixed to the support frame; and a drive source that pulls the drive rope. With this configuration, when the drive rope is pulled by the drive source, holding fixtures constituting each one pair of holding fixtures are linked to move symmetrically to each other in a direction that holds an object to be held, each one pair of holding fixtures move independently of other pairs of holding fixtures, and the holding fixtures of each one pair of holding fixtures are movable toward and away from each other on a straight line or on two parallel straight lines on a plane of the support frame. The multiple pairs of holding fixtures have contact parts that contact the object when the object is being held, and at least one of the contact parts is disposed so that it is rotatable about an axis parallel to a line normal to the plane of the support frame to maintain a rolling contact with the object when holding the object.

    Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
    20.
    发明申请
    Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same 失效
    双栅场效应晶体管,集成电路采用晶体管及其制造方法

    公开(公告)号:US20020130354A1

    公开(公告)日:2002-09-19

    申请号:US10095936

    申请日:2002-03-13

    Abstract: A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insulated from each other. The gate electrodes are formed opposite each other on the same principal surface as the channel region, with the channel region between the electrodes. The source, drain and channel regions are isolated from the surrounding part by a trench, forming an island. Gate insulation films are formed on the opposing side faces of the channel region exposed in the trench. The island region between the gate electrodes is given a width that is less than the length of the channel region to enhance the short channel effect suppressive property of structure.

    Abstract translation: 双栅场效应晶体管包括基板,形成在基板上的绝缘膜,在半导体晶体层上形成在绝缘膜上的源极,漏极和沟道区域以及彼此电绝缘的两个绝缘栅电极。 栅电极在与沟道区相同的主表面上形成为彼此相对,电极之间具有沟道区。 源极,漏极和沟道区域通过沟槽与周围部分隔离,形成岛。 栅极绝缘膜形成在暴露在沟槽中的沟道区域的相对侧面上。 栅电极之间的岛区域的宽度小于通道区域的长度,以增强结构的短沟道效应抑制性能。

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