Abstract:
A method for producing a lactam by using an organic solvent as a substrate solution, which makes it possible to introduce a high-concentration oxime into flowing high-temperature and high-pressure water, thereby allowing the high-concentration lactam to be synthesized with a high efficiency. With this method, the lactam is continuously synthesized at a high rate from the oxime under high-temperature and high-pressure water mixture conditions within a temperature range of no less than 250null C. and a pressure range of no less than 15 MPa.
Abstract:
A method for inspecting multilayer masks to detect any defects includes illuminating a pixel region on a mask to be inspected, using illuminating light having a peak wavelength that is close to that of light reflected by the mask. The illuminating light specularly reflected by the mask is blocked Scattered reflected illuminating light is collected and used to form an enlarged image. An image detector having a large plurality of pixels is used to observe the enlarged image to detect whether there are defects on the mask. The method is implemented using an mask inspection apparatus including a plasma light source for generating radiant rays, an illuminating light collecting optical system that collects radiated light from the light source for enlarged image formation illumination of a subject inspection region, a Schwarzschild optical system including convex and concave mirrors for collecting scattered light from the subject inspection region and forming an enlarged image of the inspection region, an image detector having a large plurality of pixels for recording the enlarged image that is obtained, and an analyzer that analyzes the images obtained to determine whether there is a defect.
Abstract:
A semiconductor device is manufactured using a SiC substrate. On a semiconductor region a region formed of SiC having an (11-20) face orientation is formed. A gate insulation layer is a gate oxidation layer. The surface of the semiconductor region is cleaned, and the gate insulation layer is formed in an atmosphere containing hydrogen or water vapor After the gate insulation layer has been formed, the substrate is heat-treated in an atmosphere containing hydrogen or water vapor. This reduces the interface-trap and the semiconductor region.
Abstract:
The polygon-type semiconductor detector for use in a high-speed X-ray CT according to the present invention enables a high resolution, and allows the time and cost for manufacturing to be significantly reduced, by virtue of the detection pixel group thereof having mutually homogeneous characteristics. First, X-ray modules are each constructed by arranging a plurality of X-ray detection pixels (4) formed by means of photolithography in a line on a single planar semiconductor substrate constituted of CdTe. Then, by polygonally arranging a plurality of these X-ray modules on the circumference of a measuring section around a measuring area, this polygon-type semiconductor detector is formed. Thereby, when a multiphase fluid having mutually different densities flows in the measuring area (10), this polygon-type semiconductor detector can acquire the projection data of internal density distributions at a high speed.
Abstract:
The present invention provides an input and output device for computer system storage that can prevent a computer system being fatally damaged by a computer virus, and also provides a software execution method that by using the input and output device, enables trial software, trial data and mail data to be safely tried. For this, a virtual computer system is used that runs on a computer system. Writes to a hard disk in the virtual computer system are made via a disk cache, and whether or not data is transferred from the disk cache to the hard disk is controlled. Application program snapshot data created by the computer system is recorded on a recording medium that is substantially read-only or transmitted to a different computer system. The snapshot data from the recording medium is read or received by the different computer system and a processing by the application program is resumed in the state in which data transfer from the disk cache to the first storage has stopped.
Abstract:
The present invention is formed by detecting the charged particles generated during film peeling and fragility breaking, so that it is possible to specify a peel occurring time and a fragility breaking time, with a high sensitivity and a high accuracy. In this way, it becomes possible to correctly measure the peel strength and the fragility breaking strength. The method of the invention comprises the steps of pressing an indenter into a test object and measuring an indentation load as well as an indentation depth, while at the same time detecting charged particles omitted from a peel starting point or a breakage starting point; specifying a peel occurring time and a fragility breaking time when charged particles are increased; measuring a peel strength and/or a fragility breaking strength.
Abstract:
An apparatus for measuring electromagnetic characteristics includes a sample rod with a sample fixed to a lower part thereof, a helium 3 refrigerator, in which the sample rod is inserted, having a main pipe that forms around the sample rod a space that is cooled by helium 3, a device for supplying helium 3 to the helium 3 refrigerator, an inner tube portion, into which the main pipe is inserted, that supports at an upper part thereof the refrigerator, an outer tube that cools an outer periphery of the inner tube with helium, a liquid helium container that supplies liquid helium to the outer tube, and a device for measuring the electromagnetic characteristics of the sample.
Abstract:
A holding device includes a support frame; multiple pairs of holding fixtures mounted on the support frame; a holding fixture pulley attached to one holding fixture of each one pair of holding fixtures; at least one frame pulley attached to the support frame; a drive rope bridging between the holding fixture pulley and the frame pulley and having one end pulled in one direction and the other end fixed to the support frame; and a drive source that pulls the drive rope. With this configuration, when the drive rope is pulled by the drive source, holding fixtures constituting each one pair of holding fixtures are linked to move symmetrically to each other in a direction that holds an object to be held, each one pair of holding fixtures move independently of other pairs of holding fixtures, and the holding fixtures of each one pair of holding fixtures are movable toward and away from each other on a straight line or on two parallel straight lines on a plane of the support frame. The multiple pairs of holding fixtures have contact parts that contact the object when the object is being held, and at least one of the contact parts is disposed so that it is rotatable about an axis parallel to a line normal to the plane of the support frame to maintain a rolling contact with the object when holding the object.
Abstract:
A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.
Abstract:
A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insulated from each other. The gate electrodes are formed opposite each other on the same principal surface as the channel region, with the channel region between the electrodes. The source, drain and channel regions are isolated from the surrounding part by a trench, forming an island. Gate insulation films are formed on the opposing side faces of the channel region exposed in the trench. The island region between the gate electrodes is given a width that is less than the length of the channel region to enhance the short channel effect suppressive property of structure.