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    Selective Etching Of Semiconductor Substrate(s) That Preserves Underlying Dielectric Layers
    13.
    发明申请
    Selective Etching Of Semiconductor Substrate(s) That Preserves Underlying Dielectric Layers 有权
    保护基底电介质层的半导体衬底的选择性蚀刻

    公开(公告)号：US20100267242A1

    公开(公告)日：2010-10-21

    申请号：US12763635

    申请日：2010-04-20

    Applicant: Kyle S. Lebouitz ,  David L. Springer ,  John J. Neumann, JR.

    Inventor： Kyle S. Lebouitz ,  David L. Springer ,  John J. Neumann, JR.

    IPC: H01L21/306 ,  H01L21/3065

    CPC classification number: H01L21/32135 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/3065 ,  H01L21/67017

    Abstract: In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.

    Abstract translation: 在蒸气蚀刻的方法中，包括在与第三层顶部接触并与第三层接触的第二层顶部并与之接触的第一层的样品，其中至少第一层和第二层由不同的材料组成。 在第一工艺条件下，通过蒸气蚀刻剂对样品进行蚀刻，使第一层的至少一部分被完全除去，同时留下第三层，而第二层位于第一层的被除去的部分基本上未被蚀刻。 然后在第二工艺条件下，通过相同或不同的蒸气蚀刻剂对样品进行蚀刻，这导致通过去除第一层的至少部分而被除去的第二层的至少部分被完全去除，同时留下第三层 第二层的去除部分基本上未被蚀刻。

    Method and apparatus for monitoring a microstructure etching process
    14.
    发明授权
    Method and apparatus for monitoring a microstructure etching process 有权
    用于监测微结构蚀刻工艺的方法和装置

    公开(公告)号：US07672750B2

    公开(公告)日：2010-03-02

    申请号：US11814247

    申请日：2006-01-17

    Applicant: Anthony O'Hara ,  Michael Leavy ,  Graeme Pringle

    Inventor： Anthony O'Hara ,  Michael Leavy ,  Graeme Pringle

    IPC: G06F19/00 ,  G05B11/01 ,  B29C47/00 ,  C23F1/00 ,  H01L21/306

    CPC classification number: H01J37/32935 ,  B81C1/00476 ,  B81C99/0065 ,  B81C2201/0138

    Abstract: An etching monitoring apparatus and related method for use in the manufacture of microstructures (and in particular MEMS) located within an etching chamber is described. The apparatus and related method operates by setting the temperature of the chamber within which the microstructure is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber at a constant value. As a result the surface temperature of the micro structure within the chamber is primarily determined by the etch rate. Therefore, by employing a thermometer to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.

    Abstract translation: 描述了用于制造位于蚀刻室内的微结构（特别是MEMS）的蚀刻监测装置和相关方法。 该装置和相关方法通过将微观结构所在的室的温度设定在起始温度并将室内的蚀刻气体的分压保持在恒定值来进行操作。 结果，室内微结构的表面温度主要由蚀刻速率决定。 因此，通过采用温度计来监测蚀刻表面温度的变化，提供了用于监测蚀刻工艺的直接诊断。

    TRENCH DEPTH MONITOR FOR SEMICONDUCTOR MANUFACTURING
    15.
    发明申请
    TRENCH DEPTH MONITOR FOR SEMICONDUCTOR MANUFACTURING 有权
    用于半导体制造的TRENCH DEPTH MONITOR

    公开(公告)号：US20090200547A1

    公开(公告)日：2009-08-13

    申请号：US12371021

    申请日：2009-02-13

    Applicant: Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

    Inventor： Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

    IPC: H01L21/02 ,  H01L23/00

    CPC classification number: H01L22/12 ,  B81B2203/033 ,  B81C1/00619 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/3065 ,  H01L22/26 ,  H01L29/0634 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

    Abstract: A method of manufacturing a semiconductor wafer having at least one device trench extending to a first depth position includes providing a semiconductor substrate having first and second main surfaces and a semiconductor material layer having first and second main surfaces disposed on the first main surface of the semiconductor substrate and determining an etch ratio. The least one device trench and at least one monitor trench are simultaneously formed in the first main surface of the semiconductor material layer. The at least one monitor trench is monitored to detect when it extends to a second depth position. A ratio of the first depth position to the second depth position is generally equal to the etch ratio.

    Abstract translation: 制造具有延伸到第一深度位置的至少一个器件沟槽的半导体晶片的方法包括提供具有第一和第二主表面的半导体衬底和具有设置在半导体的第一主表面上的第一和第二主表面的半导体材料层 衬底并确定蚀刻比。 在半导体材料层的第一主表面中同时形成至少一个器件沟槽和至少一个监测沟槽。 监视至少一个监视器沟槽以检测其何时延伸到第二深度位置。 第一深度位置与第二深度位置的比率通常等于蚀刻比。

    Apparatus and method for flow of process gas in an ultra-clean environment
    17.
    发明授权
    Apparatus and method for flow of process gas in an ultra-clean environment 有权
    在超清洁环境中工艺气体流动的装置和方法

    公开(公告)号：US06949202B1

    公开(公告)日：2005-09-27

    申请号：US09649569

    申请日：2000-08-28

    Applicant: Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald

    IPC: B81B3/00 ,  C23F1/00 ,  C23F1/08 ,  C23F1/12

    CPC classification number: C23F1/08 ,  B81C1/00587 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/67017

    Abstract: Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.

    Abstract translation: 通过使用工艺气体的再循环来增强在制造微结构时通过与工艺气体接触而从工件材料中添加或除去层或区域的工艺。 循环由不具有接触工艺气体的滑动或研磨部件的泵以及泵中的任何湿的（例如油）密封件或吹扫气体来实现。 改进的处理可以通过包含挡板，多孔板或两者的处理室来实现，该处理室适当地位于室中以偏转进入的工艺气体并将其分布在工件表面上。 在某些实施方案中，将稀释气体加入再循环回路并在其中连续循环，随后将工艺气体（例如蚀刻剂气体）渗入再循环回路中。 此外，工艺气体，蚀刻室和/或样品台的冷却可以帮助蚀刻工艺。 该方法对于从微观尺寸的样品中添加或除去材料特别有用。

    Method for achieving improved selectivity in an etching process
    18.
    发明授权
    Method for achieving improved selectivity in an etching process 有权
    在蚀刻过程中实现改进的选择性的方法

    公开(公告)号：US06942811B2

    公开(公告)日：2005-09-13

    申请号：US09954864

    申请日：2001-09-17

    Applicant: Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi

    IPC: B44C1/22 ,  B81B3/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F1/08 ,  C23F1/12

    CPC classification number: B81B3/00 ,  B81B2201/045 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00595 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32135

    Abstract: The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. Also, the etch selectivity can be improved by doping the sacrificial material.

    Abstract translation: 通过使用作为惰性气体氟化物或卤素氟化物的蚀刻剂气体在诸如微机电结构的微结构中蚀刻牺牲硅部分，相对于微结构的其它部分，通过减慢蚀刻速率对硅部分具有更大的选择性 。 蚀刻速率优选为30um / hr或更小，并且可以为3um / hr或甚至更小。 通过向蚀刻剂气体中添加非蚀刻剂气体添加剂也提高了选择性。 优选地，具有低于分子氮的摩尔平均配方重量的非蚀刻剂气态添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点，通过在更短的时间段内完成蚀刻，同时仍然实现相同的改进 选择性。 通过精确确定去除步骤的终点的能力也可以增强蚀刻工艺。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。 此外，通过掺杂牺牲材料可以改善蚀刻选择性。

    Method and processing system for monitoring status of system components
    19.
    发明申请
    Method and processing system for monitoring status of system components 有权
    监控系统组件状态的方法和处理系统

    公开(公告)号：US20050070104A1

    公开(公告)日：2005-03-31

    申请号：US10674703

    申请日：2003-09-30

    Applicant: David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

    Inventor： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

    IPC: H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

    Abstract: A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

    Abstract translation: 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

    Method for achieving improved selectivity in an etching process
    20.
    发明申请
    Method for achieving improved selectivity in an etching process 有权
    在蚀刻工艺中实现改进的选择性的方法

    公开(公告)号：US20020121502A1

    公开(公告)日：2002-09-05

    申请号：US09954864

    申请日：2001-09-17

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi

    IPC: C23F001/00

    CPC classification number: B81B3/00 ,  B81B2201/045 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00595 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32135

    Abstract: The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. Also, the etch selectivity can be improved by doping the sacrificial material.

    Abstract translation: 通过使用作为惰性气体氟化物或卤素氟化物的蚀刻剂气体在诸如微机电结构的微结构中蚀刻牺牲硅部分，相对于微结构的其它部分，通过减慢蚀刻速率对硅部分具有更大的选择性 。 蚀刻速率优选为30um / hr或更小，并且可以为3um / hr或甚至更小。 通过向蚀刻剂气体中添加非蚀刻剂气体添加剂也提高了选择性。 优选地，具有低于分子氮的摩尔平均配方重量的非蚀刻剂气态添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点，通过在更短的时间段内完成蚀刻，同时仍然实现相同的改进 选择性。 通过精确确定去除步骤的终点的能力也增强了蚀刻工艺。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。 此外，通过掺杂牺牲材料可以改善蚀刻选择性。

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