摘要:
A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.
摘要:
A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.
摘要:
A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.
摘要:
A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective radical sources interact with different areas of the substrate surface. The invention suitably improves uniformity of oxidation, nitridation, or both.
摘要:
A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.
摘要:
Ultra-thin oxide layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in SiO2 layers with a thickness of about 15 A, where the thickness of the SiO2 layers varies less than about 1 A over the substrates.
摘要:
A method for preparing an oxide film on a substrate. A surface of a substrate is oxidized to form an oxide film. The surface is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation and plasma induced dissociation of a process gas comprising at least one molecular composition comprising oxygen.
摘要:
The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.
摘要:
A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.
摘要:
A method and system for monitoring coating status of a ceramic substrate heater in a process chamber. The method includes heating a ceramic substrate heater to a desired temperature, exposing the ceramic substrate heater to a reactant gas during a process, and monitoring optical emission from the heated ceramic substrate heater to determine coating status of the ceramic substrate heater. Processes that can be monitored include a chamber cleaning process and a chamber conditioning process.