Abstract:
A co-doped silicate optical waveguide having a core including silica, and oxides of aluminum, germanium, erbium and thulium. The composition concentrations are: Er from 15 ppm to 3000 ppm; Al from 0.5 mol % to 12 mol %; Tm from 15 ppm to 10000 ppm; and Ge from 1 mol % to 20 mol %. In a specific embodiment, the concentration of Er is from 150 ppm to 1500 ppm; Al is from 2 mol % to 8 mol %; and Tm is from 15 ppm to 3000 ppm. A boron-less cladding surrounds the core.
Abstract:
Optical fiber composed of a glass doped with at least laser-active ions of an element from the rare earths. An optical fiber of glass, preferably a HMF glass, doped with Tm.sup.3+ is operated at 1.48 .mu.m as a fiber laser or amplifier on the laser transition .sup.3 F.sub.4 -.sup.3 H.sub.4. Since this thereby involves a self-saturating transition, the terminal level is emptied in accelerated fashion for a continuous wave mode by co-doping with de-activators, preferably Ho.sup.3+, Tb.sup.3+, Eu.sup.3+ and/or Pr.sup.3+ ions. The pump light wavelength can be selected from the wavelength range from 700 through 890 nm of GaAlAs emission. The optical fiber can be used in optical amplifiers or fiber amplifiers.
Abstract:
The present invention embraces an amplifying optical fiber having a central core adapted to convey and amplify an optical signal and a cladding that surrounds the central core to confine the optical signal conveyed in the central core. The central core is formed of a core matrix in which nanoparticles are present. The nanoparticles themselves include a nanoparticle matrix and rare-earth-dopant elements. The core matrix may also include one or more additional dopants (i.e., in addition to nanoparticles). The amplifying optical fiber possesses a small numerical aperture and is suitable for use in high-pump-power applications without a degraded gain shape.
Abstract:
A device amplifies light at wavelengths in the vicinity of 1420-1530 nm, using thulium doped silica-based optical fiber. This wavelength band is of interest as it falls in the low-loss optical fiber telecommunications window, and is somewhat shorter in wavelength than the currently standard erbium doped silica fiber amplifier. The device thus extends the band of wavelengths which can be supported for long-distance telecommunications. The additional wavelength band allows the data transmission rate to be substantially increased via wavelength division multiplexing (WDM), with minimal modification to the standard equipment currently used for WDM systems. The host glass is directly compatible with standard silica-based telecommunications fiber. The invention also enables modified silicate based amplifiers and lasers on a variety of alternative transitions. Specifically, an S-band thulium doped fiber amplifier (TDFA) using a true silicate fiber host is described.
Abstract:
A method for manufacturing an optical fiber, the method including the steps of providing a substrate tube; depositing a boron-free cladding layer; depositing a core comprising a glass including silica, and oxides of Al, Ge, Er, and Tm; collapsing the substrate tube to form a preform; and drawing the preform to yield optical fiber.
Abstract:
A device amplifies light at wavelengths in the vicinity of 1420-1530 nm, using thulium doped silica-based optical fiber. This wavelength band is of interest as it falls in the low-loss optical fiber telecommunications window, and is somewhat shorter in wavelength than the currently standard erbium doped silica fiber amplifier. The device thus extends the band of wavelengths which can be supported for long-distance telecommunications. The additional wavelength band allows the data transmission rate to be substantially increased via wavelength division multiplexing (WDM), with minimal modification to the standard equipment currently used for WDM systems. The host glass is directly compatible with standard silica-based telecommunications fiber. The invention also enables modified silicate based amplifiers and lasers on a variety of alternative transitions. Specifically, an S-band thulium doped fiber amplifier (TDFA) using a true silicate fiber host is described.
Abstract:
A modified silica glass composition for providing a reduction in the multiphonon quenching for a rare-earth dopant comprising: SiO2 in a host material; a rare-earth dopant; a first SiO2 modifier; and a second SiO2 modifier; such that said first modifier and said second modifier reduce multiphonon quenching of the rare-earth dopant contained therein.
Abstract:
The present invention concerns an optical guide (100) comprising an amplifier medium including: a core (10) in a main matrix of a transparent material, the main matrix containing particules (1, 2), each particule being formed of a submicronic matrix distinct from the main matrix and doped by an active metal element, an external guiding cladding (11) in contact with the core (10). The size of the particules (1, 2) is smaller than 20 nm. The present invention also concerns a method for producing this guide.
Abstract:
A device amplifies light at wavelengths in the vicinity of 1420-1530 nm, using thulium doped silica-based optical fiber. This wavelength band is of interest as it falls in the low-loss optical fiber telecommunications window, and is somewhat shorter in wavelength than the currently standard erbium doped silica fiber amplifier. The device thus extends the band of wavelengths which can be supported for long-distance telecommunications. The additional wavelength band allows the data transmission rate to be substantially increased via wavelength division multiplexing (WDM), with minimal modification to the standard equipment currently used for WDM systems. The host glass is directly compatible with standard silica-based telecommunications fiber. The invention also enables modified silicate based amplifiers and lasers on a variety of alternative transitions. Specifically, an S-band thulium doped fiber amplifier (TDFA) using a true silicate fiber host is described.
Abstract:
The present invention relates to an optical fiber for an optical amplifier and a method for manufacturing the same, which can be applied to an optical transmission system in the S-band area (4130 nm-1530 nm). According to the present invention, silica is used as a base material and the optical fiber for an optical amplifier contains Tm3+ ions and metal ions in a first core layer formed on an inner surface of a second core layer using the MCVD (Modified Chemical Vapor Deposition) method and a solution doping method whereby the practicability and productivity of the optical fiber are remarkably improved.