公开(公告)号：US20150225280A1

公开(公告)日：2015-08-13

申请号：US14467369

申请日：2014-08-25

Applicant: Corning Incorporated

Inventor： Brian Lee Harper ,  Rostislav Radiyevich Khrapko ,  Snigdharaj Kumar Mishra ,  Sonya Marie Raney ,  Pushkar Tandon

IPC: C03B37/014

CPC classification number: C03B37/01446 ,  C03B37/014 ,  C03B37/01453 ,  C03B2201/08 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/31 ,  C03B2203/22 ,  C03B2203/23 ,  C03B2203/26 ,  C03C13/045 ,  C03C2201/11 ,  C03C2201/20

Abstract: One embodiment of the disclosure relates to a method of making an optical fiber comprising the steps of: (i) exposing a silica based preform with at least one porous glass region having soot density of ρ to a gas mixture comprising SiCl4 having SiCl4 mole fraction ySiCl4 at a doping temperature Tdop such that parameter X is larger than 0.03 to form the chlorine treated preform, wherein X = 1 1 + [ ( ρ ρ s - ρ )  0.209748  T dop  Exp  [ - 5435.33 / T dop ] y SiCl   4 3 / 4 ] and ρs is the density of the fully densified soot layer; and (ii) exposing the chlorine treated preform to temperatures above 1400° C. to completely sinter the preform to produce sintered optical fiber preform with a chlorine doped region; and (iii) drawing an optical fiber from the sintered optical preform.

Abstract translation: 本公开的一个实施方案涉及一种制造光纤的方法，包括以下步骤：（i）将二氧化硅基预型体暴露于具有烟炱密度的至少一个多孔玻璃区域; 在掺杂温度Tdop下将SiCl 4的SiCl 4摩尔分数为ySiCl4的气体混合物混合，使得参数X大于0.03以形成经氯处理的预制件，其中X = 11 + [（＆rgr; s - ＆rgr;））0.209748 [... 5435.33 / T dop] y SiCl 4 3/4]和＆rgr; s是完全致密的烟灰层的密度; 和（ii）将氯处理的预制件暴露于高于1400℃的温度下，以完全烧结预成型件，以制备具有氯掺杂区域的烧结光纤预制件; 和（iii）从烧结的光学预型件拉制光纤。

公开(公告)号：US08539797B2

公开(公告)日：2013-09-24

申请号：US12940405

申请日：2010-11-05

Applicant: Shigeru Maida ,  Hisatoshi Otsuka

Inventor： Shigeru Maida ,  Hisatoshi Otsuka

IPC: C03B37/018 ,  C03B19/01 ,  C03B19/06 ,  C03C3/06

CPC classification number: G03F1/22 ,  C03B19/1423 ,  C03B2201/20 ,  C03B2201/42 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/20 ,  C03C2201/42 ,  Y02P40/57

Abstract: A titania and sulfur co-doped quartz glass member is provided. Due to co-doping of titania and sulfur, the quartz glass member undergoes zero expansion at a certain temperature and low thermal expansion over a wide temperature range, and is thus suited for use in a commercial EUV lithography tool. A manufacturing method and an optical member for EUV lithography are also provided.

Abstract translation: 提供二氧化钛和硫共掺杂石英玻璃构件。 由于二氧化钛和硫的共掺杂，石英玻璃构件在宽温度范围内在一定温度下经历零膨胀和低热膨胀，因此适用于商业EUV光刻工具。 还提供了用于EUV光刻的制造方法和光学构件。

公开(公告)号：US08014647B2

公开(公告)日：2011-09-06

申请号：US12805989

申请日：2010-08-27

Applicant: Stéphanie Blanchandin ,  Christine Collet ,  Alain Pastouret ,  Sophie De Monredon ,  Jean-Pierre Jolivet ,  Corinne Chaneac

Inventor： Stéphanie Blanchandin ,  Christine Collet ,  Alain Pastouret ,  Sophie De Monredon ,  Jean-Pierre Jolivet ,  Corinne Chaneac

IPC: G02B6/00 ,  C03B37/075 ,  C03C13/00

CPC classification number: C09K11/7701 ,  C03C3/06 ,  C03C4/0071 ,  C03C4/10 ,  C03C13/045 ,  C03C14/004 ,  C03C14/006 ,  C03C2201/20 ,  C03C2201/30 ,  C03C2201/3476 ,  H01S3/06716 ,  H01S3/06754 ,  H01S3/169

Abstract: The invention relates to an optical fiber comprising a gain medium which is equipped with: a core (22) which is formed from a transparent material and nanoparticles (24) comprising a doping element and at least one element for enhancing the use of said doping element; and an outer cladding (26) which surrounds the core. The invention is characterized in that the doping element is erbium (Er) and in that the enhancing element is selected from among antimony (Sb), bismuth (Bi) and a combination of antimony (Sb) and bismuth (Bi).According to the invention, one such fiber is characterized in that the size of the nanoparticles is variable and is between 1 and 500 nanometers inclusive, and preferably greater than 20 nm.

Abstract translation: 本发明涉及一种包括增益介质的光纤，该增益介质配备有：由透明材料形成的芯体（22）和包括掺杂元素的纳米颗粒（24），以及用于增强使用所述掺杂元素的至少一个元件 ; 以及围绕所述芯的外包层（26）。 本发明的特征在于掺杂元素是铒（Er），增强元素选自锑（Sb），铋（Bi）和锑（Sb）和铋（Bi）的组合。 根据本发明，一种这样的纤维的特征在于，纳米颗粒的尺寸是可变的，并且在1和500纳米之间，优选大于20纳米。

公开(公告)号：US20020160276A1

公开(公告)日：2002-10-31

申请号：US09997785

申请日：2001-11-28

Inventor： Lisa A. Moore ,  Charlene M. Smith

IPC: G03F009/00 ,  C03C015/00 ,  C03C003/04 ,  C03C003/06 ,  C03C003/112 ,  G03C005/00 ,  G02B013/14

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/36 ,  C03B2207/38 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958

Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content

Abstract translation: 公开了具有优选氟含量<0.5重量％的氟氧化硅玻璃，适合用作光刻应用中的低于190nm的VUV波长区域的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的，使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃，其在真空紫外（VUV）波长区域中表现出非常高的透射率，同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外，本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

公开(公告)号：US4591455A

公开(公告)日：1986-05-27

申请号：US444176

申请日：1982-11-24

Applicant: Pedro B. Macedo ,  Herbert G. Sutter ,  Robert K. Mohr ,  Catherine J. Simmons

Inventor： Pedro B. Macedo ,  Herbert G. Sutter ,  Robert K. Mohr ,  Catherine J. Simmons

IPC: B01J39/08 ,  B01J39/14 ,  G21F9/12 ,  G21F9/30 ,  G21F9/16

CPC classification number: C03C1/002 ,  B01J39/085 ,  C03C11/005 ,  C03C14/00 ,  C03C21/001 ,  C03C23/0095 ,  C03C3/06 ,  C03C3/061 ,  C03C3/087 ,  C03C3/089 ,  C03C3/091 ,  C03C3/097 ,  C03C3/102 ,  C03C3/142 ,  G21F9/12 ,  C03C2201/10 ,  C03C2201/20 ,  C03C2201/50

Abstract: A liquid containing radioactive ions is purified (decontaminated) by contacting the same with an inorganic ion exchange composition having ion exchange sites which can be occupied by the radioactive ions from the liquid. The ion exchange composition is a mixture of an ion exchange medium and an additive which is relatively inert to the ion exchange process and which is a sintering aid for the ion exchange medium designed to lower the sintering temperature of the ion exchange composition. The ion exchange composition may be disposed within a suitable container (e.g., cannister), e.g., made of 304L stainless steel or Inconel 601 and the ion exchange process may be carried out in such container. Alternatively, the ion exchange medium can be employed without being previously admixed with the additive. The additive, if desired, can be admixed at a later stage with the contaminated medium. Thereafter, the mixture may be sintered and disposed of in any desirable manner as by underground burial of the spent mixture within the container. Also, the container may be placed within a suitably designed furnace for carrying out the ion exchange process, sintering of the ion exchange composition and its safe disposal. Methods are also described for making a homogeneous mixture of the ion exchange medium and the additive which, for example, have a certain defined density and particle size relationship.

公开(公告)号：US09676658B2

公开(公告)日：2017-06-13

申请号：US14997780

申请日：2016-02-15

Applicant: Corning Incorporated

Inventor： Brian Lee Harper ,  Rostislav Radiyevich Khrapko ,  Snigdharaj Kumar Mishra ,  Sonya Marie Raney ,  Pushkar Tandon

IPC: C03C13/04 ,  C03B37/014

CPC classification number: C03B37/01446 ,  C03B37/014 ,  C03B37/01453 ,  C03B2201/08 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/31 ,  C03B2203/22 ,  C03B2203/23 ,  C03B2203/26 ,  C03C13/045 ,  C03C2201/11 ,  C03C2201/20

Abstract: One embodiment of the disclosure relates to a method of making an optical fiber comprising the steps of: (i) exposing a silica based preform with at least one porous glass region having soot density of ρ to a gas mixture comprising SiCl4 having SiCl4 mole fraction ySiCl4 at a doping temperature Tdop such that parameter X is larger than 0.03 to form the chlorine treated preform, wherein X = 1 1 + [ ( ρ ρ s - ρ ) ⁢ 0.209748 ⁢ ⁢ T dop ⁢ Exp ⁡ [ - 5435.33 / T dop ] y SiCl ⁢ ⁢ 4 3 / 4 ] and ρs is the density of the fully densified soot layer; and (ii) exposing the chlorine treated preform to temperatures above 1400° C. to completely sinter the preform to produce sintered optical fiber preform with a chlorine doped region; and (iii) drawing an optical fiber from the sintered optical preform.

公开(公告)号：US08629071B2

公开(公告)日：2014-01-14

申请号：US13761881

申请日：2013-02-07

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Shigeru Maida ,  Hisatoshi Otsuka

IPC: C03C3/06 ,  C03C3/04

CPC classification number: G03F1/22 ,  C03B19/1423 ,  C03B2201/20 ,  C03B2201/42 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/20 ,  C03C2201/42 ,  Y02P40/57

Abstract: A titania and sulfur co-doped quartz glass member is provided. Due to co-doping of titania and sulfur, the quartz glass member undergoes zero expansion at a certain temperature and low thermal expansion over a wide temperature range, and is thus suited for use in a commercial EUV lithography tool. A manufacturing method and an optical member for EUV lithography are also provided.

Abstract translation: 提供二氧化钛和硫共掺杂石英玻璃构件。 由于二氧化钛和硫的共掺杂，石英玻璃构件在宽温度范围内在一定温度下经历零膨胀和低热膨胀，因此适用于商业EUV光刻工具。 还提供了用于EUV光刻的制造方法和光学构件。

公开(公告)号：US20030148194A1

公开(公告)日：2003-08-07

申请号：US10342717

申请日：2003-01-13

Inventor： John T. Brown ,  Stephen C. Currie ,  Lisa A. Moore ,  Susan L. Schiefelbein ,  Robert S. Pavlik JR.

IPC: G03F009/00 ,  G03C005/00 ,  C03B005/26 ,  C03B007/00 ,  B32B009/00 ,  B32B017/06

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B37/01202 ,  C03B37/01406 ,  C03B37/01413 ,  C03B37/0142 ,  C03B37/0146 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/06 ,  C03B2207/14 ,  C03B2207/20 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/36 ,  C03B2207/38 ,  C03B2207/40 ,  C03B2207/46 ,  C03B2207/54 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958 ,  Y02P40/57

Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1null1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

公开(公告)号：US06541168B2

公开(公告)日：2003-04-01

申请号：US09841517

申请日：2001-04-24

Applicant: John T. Brown ,  Stephen C. Currie ,  Lisa A. Moore ,  Susan L. Schiefelbein ,  Robert S. Pavlik, Jr.

Inventor： John T. Brown ,  Stephen C. Currie ,  Lisa A. Moore ,  Susan L. Schiefelbein ,  Robert S. Pavlik, Jr.

IPC: G03F900

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B37/01202 ,  C03B37/01406 ,  C03B37/01413 ,  C03B37/0142 ,  C03B37/0146 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/06 ,  C03B2207/14 ,  C03B2207/20 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/36 ,  C03B2207/38 ,  C03B2207/40 ,  C03B2207/46 ,  C03B2207/54 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958 ,  Y02P40/57

Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

公开(公告)号：US06263704B1

公开(公告)日：2001-07-24

申请号：US09584721

申请日：2000-06-01

Applicant: Hiroshi Tomita ,  Tsuneo Ishii ,  Chie Hongo

Inventor： Hiroshi Tomita ,  Tsuneo Ishii ,  Chie Hongo

IPC: C03C1900

CPC classification number: C03B32/00 ,  C03B20/00 ,  C03C3/06 ,  C03C23/002 ,  C03C2201/20 ,  C03C2201/24 ,  C03C2201/26 ,  C03C2201/32 ,  C03C2203/10 ,  C03C2203/50 ,  Y10S501/905

Abstract: A quartz glass which would not become a source for the contamination even if it contains metallic impurities. This quartz glass includes a region where a concentration of E′ center as measured by means of an electron spin resonance analysis is 3×1019 cm−3 or more. This quartz glass can be manufactured by a method including the steps of forming an initial quartz glass by melting and quenching a raw material for quartz glass, and implanting therein an ion, which is capable of entering into an SiO2 network of the initial quartz glass and substantially incapable of externally diffusing, to increase a concentration of E′ center in at least part of the initial quartz glass. This quartz glass can be manufactured by a method making use of a quartz glass raw material containing 0.01 to 0.1% by weight of silicon, by a method of irradiating ultraviolet ray to the initial quartz glass, or by a method of giving an abrasion damage to the surface of the initial quartz glass by means of sand blast.

Abstract translation: 即使含有金属杂质，也不会成为污染源的石英玻璃。 该石英玻璃包含通过电子自旋共振分析测定的E'中心浓度为3×10 19 cm -3以上的区域。 该石英玻璃可以通过以下方法制造：包括以下步骤：通过熔融和淬火用于石英玻璃的原料形成初始石英玻璃，并且在其中注入能够进入初始石英玻璃的SiO 2网络的离子，以及 基本上不能进行外部扩散，以增加至少部分初始石英玻璃中的E'中心的浓度。 该石英玻璃可以通过使用含有0.01〜0.1重量％的硅的石英玻璃原料的方法，通过对初始石英玻璃照射紫外线的方法，或通过对其进行磨损损伤的方法 初始石英玻璃的表面通过喷砂。