Abstract:
A first diffraction grating is formed on a mask, and a second diffraction grating is formed on a wafer. Two light beams having slightly different frequencies interfere with each other and are diffracted as they travel through the first diffraction grating, are reflected by the second diffraction grating, and again pass through the first diffraction grating. As a result, they change into thrice diffracted light beams. The diffracted light beams are combined into a detection light beam which has a phase shift .phi..sub.A representing the displacement between the wafer and the mask, or a phase shift .phi..sub.G representing the gap between the wafer and the mask. The detection light beam is converted into a detection signal. The phase difference between the detection signal and a reference signal having no phase shifts are calculated, thus determining phase shift .phi..sub.A or .phi..sub.G. The displacement or the gap is determined from the phase shift. In accordance with the displacement or the gap, the wafer and the mask are aligned to each other, or the gap between them is adjusted to a desired value. Since the detection signal is generated from diffracted light beams, its S/N ratio is sufficiently great. Therefore, the displacement or the gap is determined with high precision. In addition, it is possible with the invention to perform the aligning of the wafer and the mask and the adjusting of the gap therebetween, simultaneously.
Abstract:
A mask aligner includes a TV image pick-up device having a wide field angle and picking up the image of a wafer detection pattern on an image pick-up station to generate TV signals at the output, a fine alignment device for detecting a positional deviation of the wafer relative to a mask in an exposure station with the detected result being used to align the wafer with the mask, a transport stage for carrying and transporting the wafer from the image pick-up station to the exposure station, a processing device for determining the positional deviation of the wafer relative to the reference position on the image pick-up stage in accordance with the TV signals, and a drive for moving the transport stage so as to remove the positional deviation of the wafer relative to the reference position of the exposure station.
Abstract:
An exposure apparatus for optically transferring a pattern of a circuit such as an integrated circuit on a semiconductor wafer. The positioning control of stepping movement of a movable stage holding the wafer thereon is effected in such a manner that even if a rotational displacement is present in the optical image of a mask pattern with respect to the moving coordinate axes of the stage the rotational displacement is substantially cancelled in a printed pattern.
Abstract:
An alignment apparatus for aligning a semiconductor wafer with an optical mask containing a circuit pattern to be exposed onto the wafer in the fabrication of semiconductor devices by a proximity exposure apparatus. The alignment apparatus includes light beam radiating means for radiating a first and second light beams which are imaged at positions separated by a given gap in a direction substantially perpendicular to two flat sheets, first and second detecting means for respectively detecting the imaging condition of the first and second light beams at the flat sheets, means for relatively moving the light beam radiating means and the flat sheets, and means for discriminating the order of generation of signals from the first and second detecting means, whereby the value of each gap between the selected areas of the two flat sheets at a plurality of places is detected with a high degree of accuracy without changing the gap between the flat sheets thereby making it possible to correct the parallelism, inclination, etc., of the flat sheets.
Abstract:
There is disclosed a static pressure bearing which is provided with plural fluid supplying pads for supplying a fluid in a gap between a guide member and a bearing member whereby the ratio of the change of pressure of the fluid supplied from the pads to the change in the gap is regulatable.
Abstract:
A lithography system for X-ray or other beam printing on a substrate such as a silicon semiconductor wafer comprises a beam chamber (301), a beam source (302), means (309) for mounting a mask, means (308) for mounting an image sensing means (342) interiorly of the chamber, means (317, 318), for mounting a substrate (307) in multiple including six degrees of freedom and means (308, 292, 320-322) including the image sensing means to align the mask and substrate relative to one another utilizing alignment patterns on the mask and substrate, images of which are brought into registration and sensed by the image sensing means. In a preferred embodiment three sets of target images are provided so as to adjust the substrate and mask relative orientation in six degrees of freedom. The mask seals helium within the chamber. The mask and the substrate are aligned in situ in the same position in which the mask and substrate are to be exposed to the beam. Means (313, 314, 311, 312) are provided for loading masks, calibration assemblies and substrate-holding means. The source-to-substrate distance is adjustable as is the mask-to-substrate gap. To conserve helium volume adjustable optic objectives (342) are provided in the chamber to sense registration of alignment targets on each of the mask and substrate, with essentially the remainder of the optics outside the chamber. Improved compression optics (408) are also provided in the alignment system.
Abstract:
A circular cylinder-shaped mask is used to form an image of a pattern on a substrate via a projection optical system. The mask has a pattern formation surface on which the pattern is formed and that is placed around a predetermined axis, and the mask is able to rotate, with the predetermined axis taken as an axis of rotation, in synchronization with a movement of the substrate in at least a predetermined one-dimensional direction. When a diameter of the mask on the pattern formation surface is taken as D, and a maximum length of the substrate in the one-dimensional direction is taken as L, and a projection ratio of the projection optical system is taken as β, and circumference ratio is taken as π, then the conditions for D≧(β×L)/π are satisfied.
Abstract:
An imprint apparatus performs alignment control of a mold and a substrate. A pattern formed on the mold is transferred onto a pattern forming layer on the substrate. A mold holding portion holds the mold, a substrate holding portion holds the substrate, and a control portion effects control so that the mold and the substrate are brought near to each other during the alignment control. The mold and the pattern forming layer are brought into contact with each other and then the pattern forming layer is cured. The control portion changes a driving profile for the alignment control after the alignment control is started and at least one of before and after the mold contacts the pattern forming layer. The driving profile used to move at least one of the mold holding portion and the substrate holding portion to a target position, and includes at least one of acceleration, speed, driving voltage, and driving current.
Abstract:
Provided are a method and system for measuring a distance to an object. The system includes an air gauge configured to sense a distance to a surface of the object and a sensor configured to measure at least one from the group including (i) a relative position of the air gauge and (ii) a relative position of the surface of the object. Outputs of the air gauge and the sensor are combined to produce a combined air gauge reading.
Abstract:
A position detecting system including a detecting system for detecting positions, at different points on a surface of a reticle having a predetermined pattern formed thereon, with respect to a direction substantially perpendicular to the reticle surface, wherein the detecting system includes a light projecting portion for directing light from a light source to the reticle surface and a light receiving portion for receiving reflection light from the reticle surface, and wherein the angle of incidence of light from the light projecting portion, being incident on the reticle surface, is not less than 45 degrees.