公开(公告)号：US20070123949A1

公开(公告)日：2007-05-31

申请号：US11557210

申请日：2006-11-07

申请人： Warren Dabney ,  Robert Stevenson

发明人： Warren Dabney ,  Robert Stevenson

IPC分类号： A61N1/375

CPC分类号： A61N1/3754 ,  A61N1/3718 ,  H01G4/35 ,  H03H1/0007 ,  H03H7/175 ,  H03H7/1775 ,  H03H2001/0042 ,  H03H2001/0071 ,  H03H2001/0085

摘要： A hermetic terminal for an active implantable medical device (AIMD), includes an RF distance telemetry pin antenna, a capacitor conductively coupled between the antenna and a ground for the AIMD, and an inductor electrically disposed in parallel with the capacitor and conductively coupled between the antenna and a ground for the AIMD. The capacitor and the inductor form a band pass filter for attenuating electromagnetic signals through the antenna except at a selected frequency band. Values of capacitance and inductance are selected such that the band pass filter is resonant at the selected frequency band.

摘要翻译： 一种用于有源可植入医疗装置（AIMD）的气密端子，包括RF距离遥测针天线，导电地耦合在天线与AIMD的接地之间的电容器，以及与电容器并联电连接的电感器， 天线和AIMD的地面。 电容器和电感器形成带通滤波器，用于通过天线除去选定频带以外的电磁信号。 选择电容和电感的值，使得带通滤波器在所选频带处共振。

公开(公告)号：US20030087765A1

公开(公告)日：2003-05-08

申请号：US10167938

申请日：2002-06-10

申请人： SUPERCONDUCTOR TECHNOLOGIES, INC.

发明人： Balam Quitze Andres Willemsen Cortes ,  Albert H. Cardona ,  Neal O. Fenzi ,  Roger J. Forse

IPC分类号： H01P001/203 ,  H01B012/02

CPC分类号： H01P7/082 ,  C07C19/03 ,  H01F6/06 ,  H01F17/0006 ,  H01F2027/2861 ,  H01P7/00 ,  H03H1/00 ,  H03H2/00 ,  H03H7/0115 ,  H03H7/0123 ,  H03H7/03 ,  H03H2001/0071 ,  H03H2001/0078 ,  Y10S336/01 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

摘要： Novel structures and methods for forming useful high temperature superconducting devices, most particularly resonators, are provided. Structures resulting in reduced peak current densities relative to known structures achieve numerous desirable benefits, especially including the reduced intermodulation effects of earlier resonators. In one aspect of this invention, a spiral in, spiral out resonator is provided, characterized in that it has an odd number of long runs, at least equal to five long runs, where the long runs are connected by turns, and wherein there are at least two sequential turns of the same handedness, followed by at least two turns of the opposite handedness. In yet another aspect of this invention, it has been discovered that reducing the size of the input and output pads of HTS resonators increases the relative inductance compared to the capacitance. Yet another resonator structure is a spiral snake resonator having a terminal end disposed within the resonator. A wide in the middle structure and wide at peak current density resonator structures utilize enlarged width portions of the resonator in those areas where current density is largest. In yet another aspect of this invention, operation of resonators in high modes, above the fumdamental mode, reduce peak current densities. Resonators operated in modes in which current in adjacent long runs are in the same direction further serve to reduce current densities, and intermodulation effects. Symmetric current structures and modes of operation are particularly advantageous where far field effects are compensated for.

摘要翻译： 提供了用于形成有用的高温超导装置，特别是谐振器的新颖结构和方法。 导致相对于已知结构降低的峰值电流密度的结构实现了许多期望的益处，特别是包括较早谐振器的减少的互调效应。 在本发明的一个方面，提供一种螺旋形螺旋输出谐振器，其特征在于，其具有奇数个长行程，至少等于五个长行程，其中长行程轮流连接，并且其中存在 至少两个相同的手性的连续转弯，其次是至少两圈相反的手感。 在本发明的另一方面，已经发现，与电容相比，减小HTS谐振器的输入和输出焊盘的尺寸增加了相对电感。 另一种谐振器结构是具有设置在谐振器内的终端的螺旋形蛇形谐振器。 中间结构宽，峰值电流密度谐振器结构宽，在电流密度最大的区域中利用谐振器的扩大宽度部分。 在本发明的另一方面，高于烟熏模式的高模式的谐振器的操作降低了峰值电流密度。 在相邻长行中的电流处于相同方向的模式下操作的谐振器进一步用于降低电流密度和互调效应。 对称电流结构和操作模式在远场效应得到补偿时特别有利。

公开(公告)号：US20030038689A1

公开(公告)日：2003-02-27

申请号：US10212261

申请日：2002-08-06

发明人： Naoto Yamaguchi

IPC分类号： H03F003/38 ,  H03H009/205 ,  H03H009/22 ,  H03H009/24

CPC分类号： H03H7/1766 ,  H03H7/0115 ,  H03H7/1775 ,  H03H7/1791 ,  H03H2001/0071 ,  H03H2001/0085

摘要： An LC filter circuit includes first and second LC-trap capacitor conductors, respectively, that are opposed to third and fourth LC-trap capacitor conductors with an insulating sheet therebetween to define first and second LC trap capacitors, respectively. A portion of a first LC resonator inductor and the first LC trap capacitor define an input-side LC trap circuit, and a portion of a second LC resonator inductor and the second LC trap capacitor define an output-side LC trap circuit.

摘要翻译： LC滤波电路分别包括与第三和第四LC陷波电容器导体相对的第一和第二LC陷波电容器导体，其中绝缘片分别形成第一和第二LC陷波电容器。 第一LC谐振电感器和第一LC陷波电容器的一部分限定输入侧LC陷波电路，并且第二LC谐振电感器的一部分和第二LC陷波电容器限定输出侧LC陷波电路。

公开(公告)号：US5616539A

公开(公告)日：1997-04-01

申请号：US297289

申请日：1994-08-26

申请人： Gregory L. Hey-Shipton ,  Stephan M. Rohlfing ,  George L. Matthaei ,  Roger J. Forse

发明人： Gregory L. Hey-Shipton ,  Stephan M. Rohlfing ,  George L. Matthaei ,  Roger J. Forse

IPC分类号： H03H7/075 ,  H01F6/06 ,  H01F17/00 ,  H01L39/00 ,  H03H1/00 ,  H03H2/00 ,  H03H7/01 ,  H03H7/03 ,  H01B12/06

CPC分类号： H01F6/06 ,  H01F17/0006 ,  H03H2/00 ,  H03H7/0115 ,  H03H7/1791 ,  H01F2017/0046 ,  H01F2027/2861 ,  H03H1/00 ,  H03H2001/0071 ,  H03H2001/0078 ,  H03H2001/0085 ,  H03H7/075 ,  H03H7/1708 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

摘要： Lumped element electrical components, such as inductors and capacitors, are formed to include high temperature superconducting materials. In the preferred embodiment, thin film epitaxial high temperature superconductors are patterned to form capacitors and inductors on low loss substrates. Preferably, a ground plane is formed on the back side of the substrate, most preferably being formed of high temperature superconducting material, or other highly conductive materials such as gold or copper. Various advantageous structures include a planar spiral structure, a zig-zag serpentine structure, a single coil structure and a double coil structure. Single layer and multilayer structures are included. Improved narrow bandpass filters, bandreject filters and high Q resonator structures are formed. Chebyshev bandpass filters are formed from multiple series connected zig-zag filter structures. Chebyshev, elliptic and quasi-elliptic bandreject filters are formed from a plurality of bandreject structures, each of which includes a zig-zag or serpentine inductor. A quasi-elliptic bandpass filter utilizes a plurality of series connected bandpass structures with planar cross-coupling of bandpass structures.

摘要翻译： 诸如电感器和电容器的集成元件电气元件被形成为包括高温超导材料。 在优选实施例中，薄膜外延高温超导体被图案化以在低损耗衬底上形成电容器和电感器。 优选地，在基板的背面上形成接地平面，最优选地由高温超导材料或其它高导​​电材料如金或铜形成。 各种有利的结构包括平面螺旋结构，锯齿状蛇形结构，单线圈结构和双线圈结构。 包括单层和多层结构。 形成改进的窄带通滤波器，带式滤波器和高Q谐振器结构。 切比雪夫带通滤波器由多个串联连接的之字形滤波器结构形成。 切比雪夫，椭圆形和准椭圆形带隙滤波器由多个带状结构形成，每个带状结构包括锯齿形或蛇形电感。 准椭圆带通滤波器利用具有带通结构的平面交叉耦合的多个串联连接的带通结构。

公开(公告)号：US06791434B2

公开(公告)日：2004-09-14

申请号：US10207763

申请日：2002-07-31

申请人： Tatsuya Tsujiguchi

发明人： Tatsuya Tsujiguchi

IPC分类号： H03H700

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01044 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12043 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01P1/203 ,  H03H7/06 ,  H03H7/075 ,  H03H7/1791 ,  H03H2001/0071 ,  H04B10/6972 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A flat group-delay low-pass filter includes a series element connected between an input terminal and an output terminal, and a shunt element with one end thereof grounded. Inductors define the series element, a parallel circuit including a capacitor and a series circuit including a resistor and a capacitor defines the shunt element. The flat group-delay low-pass filter thus eliminates the need for inserting a fixed attenuator to control the effect of reflections due to impedance mismatching between the filter and other components. The resulting flat group-delay low-pass filter and an optical signal receiver including the filter have very low manufacturing costs and component costs.

摘要翻译： 平坦组延迟低通滤波器包括连接在输入端子和输出端子之间的串联元件以及一端接地的分流元件。 电感器定义了串联元件，包括电容器的并联电路和包括电阻器和电容器的串联电路限定了分流元件。 平坦组延迟低通滤波器因此消除了插入固定衰减器以控制由于滤波器和其它组件之间的阻抗失配引起的反射的影响的需要。 得到的平坦组延迟低通滤波器和包括滤波器的光信号接收机具有非常低的制造成本和部件成本。

公开(公告)号：US20030034796A1

公开(公告)日：2003-02-20

申请号：US10207763

申请日：2002-07-31

申请人： Murata Manufacturing Co., Ltd.

发明人： Tatsuya Tsujiguchi

IPC分类号： H03K017/16 ,  H03K019/003

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01044 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12043 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01P1/203 ,  H03H7/06 ,  H03H7/075 ,  H03H7/1791 ,  H03H2001/0071 ,  H04B10/6972 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A flat group-delay low-pass filter includes a series element connected between an input terminal and an output terminal, and a shunt element with one end thereof grounded. Inductors define the series element, a parallel circuit including a capacitor and a series circuit including a resistor and a capacitor defines the shunt element. The flat group-delay low-pass filter thus eliminates the need for inserting a fixed attenuator to control the effect of reflections due to impedance mismatching between the filter and other components. The resulting flat group-delay low-pass filter and an optical signal receiver including the filter have very low manufacturing costs and component costs.

摘要翻译： 平坦组延迟低通滤波器包括连接在输入端子和输出端子之间的串联元件以及一端接地的分流元件。 电感器定义了串联元件，包括电容器的并联电路和包括电阻器和电容器的串联电路限定了分流元件。 平坦组延迟低通滤波器因此消除了插入固定衰减器以控制由于滤波器和其它组件之间的阻抗失配引起的反射的影响的需要。 得到的平坦组延迟低通滤波器和包括滤波器的光信号接收机具有非常低的制造成本和部件成本。

公开(公告)号：US6045747A

公开(公告)日：2000-04-04

申请号：US158429

申请日：1998-09-21

申请人： Jens Peter Holm

发明人： Jens Peter Holm

IPC分类号： H01G4/40 ,  H03H3/00 ,  H03H7/01 ,  C04B35/64 ,  C04B37/00

CPC分类号： H01G4/40 ,  H03H3/00 ,  H03H7/0115 ,  H03H2001/0057 ,  H03H2001/0071 ,  H03H2001/0085

摘要： A method is provided of producing an LC-circuit in form of a single component, in which the inductor and capacitor elements are arranged atop one another, and where the inductor elements are formed by ferromagnetic zones made of layers (6,8) of ferrite of a high permeability, and between which electrode layers (7) are provided, and where the capacitor elements are formed by dielectric zones made of layers (9) of dielectric with electrode layers (4,5) on both sides, said inductor and capacitor elements being produced by way of tape- or thick-film technology. According to the invention, the capacitor elements are initially provided and being subjected to a sintering at a relatively high temperature, whereafter the inductor elements (6,7,8) are applied and a sintering is performed at a considerably low temperature. In this manner undesired reactions are avoided between the two zones.

摘要翻译： 提供了一种以单个部件的形式制造LC电路的方法，其中电感器和电容器元件彼此顶置，并且其中电感器元件由铁氧体层（6,8）制成的铁磁区形成， 具有高导磁率，并且在其间设置有电极层（7），并且电容器元件由电介质层（9）由电介质层（4,5）形成在两侧的电介质区域，所述电感器和电容器 元件通过胶带或厚膜技术生产。 根据本发明，最初提供电容器元件并在相对较高的温度下进行烧结，然后施加电感器元件（6,7,8），并在相当低的温度下进行烧结。 以这种方式，避免了两个区域之间不期望的反应。

公开(公告)号：US5618777A

公开(公告)日：1997-04-08

申请号：US70100

申请日：1993-05-28

申请人： Gregory L. Hey-Shipton ,  Roger J. Forse ,  David L. Skoglund

发明人： Gregory L. Hey-Shipton ,  Roger J. Forse ,  David L. Skoglund

IPC分类号： H03H7/075 ,  H01F6/06 ,  H01F17/00 ,  H03H1/00 ,  H03H2/00 ,  H03H7/01 ,  H03H7/03 ,  H01B12/06

CPC分类号： H01F17/0006 ,  H01F6/06 ,  H03H2/00 ,  H03H7/0115 ,  H03H7/03 ,  H01F2017/0046 ,  H01F2027/2861 ,  H03H1/00 ,  H03H2001/0071 ,  H03H2001/0078 ,  H03H2001/0085 ,  H03H7/075 ,  Y10S336/01 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/705 ,  Y10S505/866

摘要： Lumped element electrical components, such as inductors and capacitors, are formed to include high temperature superconducting materials. In the preferred embodiment, thin film epitaxial high temperature superconductors are patterned to form capacitors and inductors on low loss substrates. Preferably, a ground plane is formed on the back side of the substrate, most preferably being formed of high temperature superconducting material, or other highly conductive materials such as gold or copper. Various advantageous structures include a planar spiral structure, a zig-zag serpentine structure, a single coil structure and a double coil structure. Single layer and multilayer structures are included. Improved narrow bandpass filters and high Q resonator structures are formed.

摘要翻译： 诸如电感器和电容器的集成元件电气元件被形成为包括高温超导材料。 在优选实施例中，薄膜外延高温超导体被图案化以在低损耗衬底上形成电容器和电感器。 优选地，在基板的背面上形成接地平面，最优选地由高温超导材料或其它高导​​电材料如金或铜形成。 各种有利的结构包括平面螺旋结构，锯齿状蛇形结构，单线圈结构和双线圈结构。 包括单层和多层结构。 形成改进的窄带通滤波器和高Q谐振器结构。

公开(公告)号：US5500552A

公开(公告)日：1996-03-19

申请号：US282046

申请日：1994-07-22

申请人： Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

发明人： Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

IPC分类号： H01L27/08 ,  H03B5/12 ,  H03B5/18 ,  H03H7/01 ,  H01L29/00

CPC分类号： H03H7/0115 ,  H01L27/08 ,  H03B5/1841 ,  H03H7/0123 ,  H01L2924/0002 ,  H03H2001/0064 ,  H03H2001/0071 ,  H03H2001/0078

摘要： An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 and gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

摘要翻译： 一种LC元件，半导体器件及其制造方法，通过经由绝缘层26向在p-Si衬底30上形成的具有预定形状的栅电极10施加电压而形成沟道22，由此在 形成在p-Si衬底30的表面附近的分离位置处的第一扩散区域12和第二扩散区域14; 通道22和栅极电极10都用作电感器，并且在这些之间形成分布常数型电容器，并且在宽带上具有优异的衰减特性。 该LC元件和半导体器件可以通过使用MOS制造技术容易地制造; 在制造半导体基板的一部分的情况下，可以省略后续处理中的部件组装工作。 而且这些也可以形成为IC或LSI器件的一部分。