公开(公告)号：US5500552A

公开(公告)日：1996-03-19

申请号：US282046

申请日：1994-07-22

申请人： Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

发明人： Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

IPC分类号： H01L27/08 ,  H03B5/12 ,  H03B5/18 ,  H03H7/01 ,  H01L29/00

CPC分类号： H03H7/0115 ,  H01L27/08 ,  H03B5/1841 ,  H03H7/0123 ,  H01L2924/0002 ,  H03H2001/0064 ,  H03H2001/0071 ,  H03H2001/0078

摘要： An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 and gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

摘要翻译： 一种LC元件，半导体器件及其制造方法，通过经由绝缘层26向在p-Si衬底30上形成的具有预定形状的栅电极10施加电压而形成沟道22，由此在 形成在p-Si衬底30的表面附近的分离位置处的第一扩散区域12和第二扩散区域14; 通道22和栅极电极10都用作电感器，并且在这些之间形成分布常数型电容器，并且在宽带上具有优异的衰减特性。 该LC元件和半导体器件可以通过使用MOS制造技术容易地制造; 在制造半导体基板的一部分的情况下，可以省略后续处理中的部件组装工作。 而且这些也可以形成为IC或LSI器件的一部分。

公开(公告)号：US5846845A

公开(公告)日：1998-12-08

申请号：US476276

申请日：1995-06-07

申请人： Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

发明人： Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

IPC分类号： H01L27/08 ,  H03B5/12 ,  H03B5/18 ,  H03H7/01 ,  H01L21/77

CPC分类号： H03H7/0115 ,  H01L27/08 ,  H03B5/1841 ,  H03H7/0123 ,  H01L2924/0002 ,  H03H2001/0064 ,  H03H2001/0071 ,  H03H2001/0078

摘要： An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

摘要翻译： 一种LC元件，半导体器件及其制造方法，通过经由绝缘层26向在p-Si衬底30上形成的具有预定形状的栅电极10施加电压而形成沟道22，由此在 形成在p-Si衬底30的表面附近的分离位置处的第一扩散区域12和第二扩散区域14; 沟道22栅电极10都用作电感器，并且形成分布常数型电容器，并且在宽带上具有优异的衰减特性。 该LC元件和半导体器件可以通过使用MOS制造技术容易地制造; 在制造半导体基板的一部分的情况下，可以省略后续处理中的部件组装工作。 而且这些也可以形成为IC或LSI器件的一部分。

公开(公告)号：US6097080A

公开(公告)日：2000-08-01

申请号：US171455

申请日：1998-10-19

申请人： Tsutomu Nakanishi ,  Akira Okamoto

发明人： Tsutomu Nakanishi ,  Akira Okamoto

IPC分类号： H01L23/31 ,  H01L23/552 ,  H01L23/58 ,  H01L23/64 ,  H05K1/00

CPC分类号： H01L24/48 ,  H01L23/3135 ,  H01L23/552 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/49175 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/3025

摘要： It is the object to minimize a magnetic influence, on the outside, of a semiconductor chip which is formed on a substrate includes inductor conductors. A semiconductor chip 2 including inductor conductors is mounted on a substrate 1 and a plurality of through holes 8 are formed in the area on the outside of the mounting position. Shielding members 4 are formed on the chip mounting side and the opposite side of the substrate 1 and in the through holes 8 so as to cover the semiconductor chip 2 with the shielding members 4 from both sides of the substrate 1. Therefore, magnetic fluxes from a circuit formed on the semiconductor chip 2 do not leak out from the shielding members 4, but circulate inside the shielding members 4.

摘要翻译： PCT No.PCT / JP97 / 01412 Sec。 371日期：1998年10月19日 102（e）1998年10月19日PCT PCT 1997年4月23日提交PCT公布。 出版物WO97 / 40654 日期为1997年10月30日的目的在于使形成在基板上的半导体芯片的外部的磁性影响最小化的目的包括电感器导体。 包括电感器导体的半导体芯片2安装在基板1上，并且在安装位置的外侧的区域中形成有多个通孔8。 屏蔽部件4形成在芯片安装侧和基板1的相反侧以及通孔8中，从而从基板1的两侧将屏蔽部件4覆盖半导体芯片2。因此，从 形成在半导体芯片2上的电路不会从屏蔽部件4泄漏，而是在屏蔽部件4的内部循环。

公开(公告)号：US6087901A

公开(公告)日：2000-07-11

申请号：US142311

申请日：1998-09-03

申请人： Tsutomu Nakanishi ,  Akira Okamoto

发明人： Tsutomu Nakanishi ,  Akira Okamoto

IPC分类号： H03F3/193 ,  H03G3/30 ,  H03F3/191 ,  H03G3/18

CPC分类号： H03G3/3036 ,  H03F3/1935

摘要： A tuning amplifier 1 is provided with an oscillation circuit 10 incorporating an amplifier circuit 11 and a feedback circuit 12, an input circuit 14 which inputs signals to the oscillation circuit 10, and an automatic gain control (AGC) circuit 16 which controls the output amplitude of the oscillation circuit 10. When signals are inputted to the oscillation circuit 10 through the input circuit 14, such tuning that only signals having frequencies near the oscillation frequency of the oscillation circuit 10 are allowed to pass through is possible.

摘要翻译： PCT No.PCT / JP97 / 00761 Sec。 371日期：1998年9月3日 102（e）1998年9月3日PCT PCT 1997年3月11日PCT公布。 公开号WO97 / 34368 日期：1997年9月18日调谐放大器1设置有包括放大器电路11和反馈电路12的振荡电路10，向振荡电路10输入信号的输入电路14以及自动增益控制（AGC）电路16 其控制振荡电路10的输出振幅。当通过输入电路14将信号输入到振荡电路10时，仅允许具有接近振荡电路10的振荡频率的频率的信号的调谐被允许通过。

公开(公告)号：US6058295A

公开(公告)日：2000-05-02

申请号：US860428

申请日：1997-06-23

申请人： Takeshi Ikeda ,  Tadataka Ohe ,  Tsutomu Nakanishi

发明人： Takeshi Ikeda ,  Tadataka Ohe ,  Tsutomu Nakanishi

IPC分类号： H03H11/04 ,  H03H11/12 ,  H03H11/20 ,  H03H11/48 ,  H04B1/18

CPC分类号： H03H11/20 ,  H03H11/04 ,  H03H11/1291 ,  H03H11/481 ,  H03H11/485

摘要： A tuning circuit which has a wide tuning bandwidth. The tuning bandwidth or the tuning frequency can be easily changed. The tuning circuit 1 is imposed of two cascade-connected tuning amplifier sections 2 and 3. Each of the sections 2 and 3 is provided with cascade-connected phase-shifting circuits 10C and 30C, a non-inverting circuit 50, a voltage dividing circuit 160, and an adding circuit composed of a feedback resistor 70 and an input resistor 74. Prescribed tuning operation is performed by shifting the prescribed frequency 360.degree. by means of the phase shifting circuits 10C and 30C and setting the open loop gain of a feedback loop at less than 1 when the output of the voltage dividing circuit 160 is feedback. The resistance ratio between the feedback resistor 70 and the input resistor 74 of each section 2, 3 is adjusted so that the maximum damping of each section 2, 3 may become smaller and the tuning bandwidth of each section 2, 3 becomes wider. Therefore, since the two tuning amplifier sections are cascade-connected, the maximum damping is increased and the tuning bandwidth is widened as a whole.

摘要翻译： PCT No.PCT / JP96 / 00027 Sec。 371日期：1997年6月23日 102（e）日期1997年6月23日PCT 1996年1月11日PCT PCT。 公开号WO96 / 21969 日期1996年7月18日具有宽调谐带宽的调谐电路。 调谐带宽或调谐频率可以轻松改变。 调谐电路1由两个级联连接的调谐放大器部分2和3施加。部分2和3中的每一个设置有级联连接的移相电路10C和30C，非反相电路50，分压电路 160，以及由反馈电阻70和输入电阻74组成的加法电路。通过移相电路10C和30C移动规定频率360°进行调谐操作，并设定反馈回路的开环增益 当分压电路160的输出反馈时小于1。 每个部分2,3的反馈电阻器70和输入电阻器74之间的电阻比被调节，使得每个部分2,3的最大阻尼可能变小，并且每个部分2,3的调谐带宽变宽。 因此，由于两个调谐放大器部分级联连接，所以最大阻尼增加，并且调谐带宽整体上扩大。

公开(公告)号：US6081157A

公开(公告)日：2000-06-27

申请号：US860402

申请日：1997-06-23

申请人： Takeshi Ikeda ,  Tadataka Ohe ,  Tsutomu Nakanishi

发明人： Takeshi Ikeda ,  Tadataka Ohe ,  Tsutomu Nakanishi

IPC分类号： H03H7/01 ,  H03H11/12 ,  H03H11/20 ,  H03H11/48 ,  H03F3/191

CPC分类号： H03H11/1217 ,  H03H11/1291 ,  H03H11/20 ,  H03H11/481 ,  H03H11/483 ,  H03H11/485 ,  H03H2210/012 ,  H03H2210/015 ,  H03H2210/026 ,  H03H2210/028

摘要： A tuning circuit which has a wide tuning bandwidth. The tuning bandwidth of the tuning frequency can be easily changed. The tuning circuit 1 is composed of two cascade-connected tuning amplifier sections 2 and 3. Each of the sections 2 and 3 is provided with cascade-connected phase-shifting circuits 10C and 30C, a voltage dividing circuit 60, and an adding circuit composed of a feedback resistor 70 and an input resistor 74. Prescribed tuning operation is performed by shifting the phase of a prescribed frequency by 360.degree. by means of the phase shifting circuits 10C and 30C and setting the open loop gain of a feedback loop at less than 1 when the output of the voltage dividing circuit 60 is feedback. The resistance ratio between the feedback resistor 70 and input resistor 74 of each tuning amplifier section is adjusted in order that the maximum damping of each tuning amplifier section becomes smaller and the tuning bandwidth of each amplifier section becomes wider. Therefore, since the tuning amplifier sections are cascade-connected, the maximum damping is increased and the tuning bandwidth is widened as a whole.

摘要翻译： PCT No.PCT / JP96 / 00026 Sec。 371日期：1997年6月23日 102（e）日期1997年6月23日PCT 1996年1月11日PCT PCT。 公开号WO96 / 21970 日期1996年7月18日具有宽调谐带宽的调谐电路。 调谐频率的调谐带宽可以很容易地改变。 调谐电路1由两个级联连接的调谐放大器部分2和3组成。每个部分2和3都设有级联的移相电路10C和30C，分压电路60和加法电路 反馈电阻器70和输入电阻器74.通过移相电路10C和30C将规定频率的相位移位360度，并将反馈回路的开环增益设定为小于等于 1，当分压电路60的输出反馈时。 调整每个调谐放大器部分的反馈电阻器70和输入电阻器74之间的电阻比，使得每个调谐放大器部分的最大阻尼变小，并且每个放大器部分的调谐带宽变宽。 因此，由于调谐放大器部分级联连接，所以最大阻尼增加，调谐带宽整体变宽。

公开(公告)号：US08841615B2

公开(公告)日：2014-09-23

申请号：US13637227

申请日：2011-02-22

申请人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

发明人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

IPC分类号： H01J37/26 ,  H01J37/073

CPC分类号： H01J37/26 ,  H01J37/073 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557

摘要： An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

摘要翻译： 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。

公开(公告)号：US07928353B2

公开(公告)日：2011-04-19

申请号：US12392691

申请日：2009-02-25

申请人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

IPC分类号： H01J1/46

CPC分类号： H01L51/5203 ,  H01L51/5234 ,  H01L2251/5315

摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

公开(公告)号：US07759861B2

公开(公告)日：2010-07-20

申请号：US11234189

申请日：2005-09-26

申请人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

发明人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L51/5262 ,  H01L27/3211

摘要： In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional concavo-convex structure having two pattern periods.

摘要翻译： 在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个图案周期的二维凹凸结构。

公开(公告)号：US06859133B2

公开(公告)日：2005-02-22

申请号：US10258905

申请日：2002-02-28

申请人： Tsutomu Nakanishi ,  Takashi Morino ,  Tadao Yagi ,  Tetsuhiro Korechika

发明人： Tsutomu Nakanishi ,  Takashi Morino ,  Tadao Yagi ,  Tetsuhiro Korechika

IPC分类号： H01C1/14 ,  H01C1/148 ,  H01C7/00 ,  H01C1/012

CPC分类号： H01C7/003 ,  H01C1/148

摘要： The resistor of the present invention comprises a substrate, a pair of upper electrode layers disposed on one surface of the substrate, and a resistor layer connected to the pair of upper electrode layers, wherein the upper electrode layer includes a first thin film layer that strongly adheres to the substrate and the resistor layer, and a second thin film layer having volume resistivity lower than the volume resistivity of the first upper electrode thin film layer. Further, the resistor of the present invention comprises a pair of side electrodes, electrically connected to the upper electrode layers, at the end portion of the substrate, and the side electrode includes a first side thin film layer and a second side thin film layer, and the material that forms the second side thin film layer has a solid solubility with the first side thin film layer.

摘要翻译： 本发明的电阻器包括衬底，设置在衬底的一个表面上的一对上电极层和连接到一对上电极层的电阻层，其中上电极层包括强烈的第一薄膜层 粘附到基板和电阻层，以及具有低于第一上电极薄膜层的体积电阻率的体积电阻率的第二薄膜层。 此外，本发明的电阻器包括在基板的端部处电连接到上电极层的一对侧电极，并且侧电极包括第一侧薄膜层和第二侧薄膜层， 并且形成第二侧薄膜层的材料与第一侧薄膜层具有固体溶解性。