利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

281 条记录 (耗时 0.024 秒)

    SOLAR CELL, AND METHOD FOR MANUFACTURING SOLAR CELL
    12.
    发明申请
    SOLAR CELL, AND METHOD FOR MANUFACTURING SOLAR CELL 有权

    公开(公告)号：US20210159355A1

    公开(公告)日：2021-05-27

    申请号：US16959789

    申请日：2019-01-09

    申请人： PANASONIC CORPORATION

    发明人： Daiji KANEMATSU ,  Keiichiro MASUKO ,  Izuru NAKAI ,  Hirotaka KATAYAMA

    IPC分类号： H01L31/068 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/05 ,  H01L31/0445

    摘要： A solar cell (1) includes a semiconductor substrate (10) having a light-receiving surface (10a) and a back surface (10b); an n-type semiconductor layer (13n) and a p-type semiconductor layer (12p) provided on the back surface (10b) of the semiconductor substrate (10), the n-type semiconductor layer (13n) and the p-type semiconductor layer (12p) extending in a first direction and being adjacent to each other in a second direction intersecting with the first direction; and a ground layer (14) provided on the n-type semiconductor layer (13n) and the p-type semiconductor layer (12p). The ground layer (14) includes an n-side ground layer (14n) and a p-side ground layer (14p) separated from each other by a first separating groove (17) having a first separating portion (17a) and a second separating portion (17b) as well as a first bridge portion (18) separating the first separating portion (17a) and the second separating portion (17b). The first bridge portion (18) separates the first separating portion (17a) and the second separating portion (17b) at at least one of a border on the n-side ground layer (14n) or a border on the p-side ground layer (14p) in the first direction.

    Thin film photovoltaic cell with back contacts
    15.
    发明授权
    Thin film photovoltaic cell with back contacts 有权

    公开(公告)号：US10741710B2

    公开(公告)日：2020-08-11

    申请号：US15820524

    申请日：2017-11-22

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Hans-Juergen Eickelmann ,  Ruediger Kellmann ,  Hartmut Kuehl ,  Markus Schmidt

    IPC分类号： H01L31/04 ,  H01L31/0465 ,  H01L31/0445 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/032

    摘要： Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes may include a photon-reflective material.

    Thin film type solar cell and manufacturing method therefor
    17.
    发明授权
    Thin film type solar cell and manufacturing method therefor 有权

    公开(公告)号：US10665740B2

    公开(公告)日：2020-05-26

    申请号：US15735599

    申请日：2016-06-10

    申请人： JUSUNG ENGINEERING CO., LTD.

    发明人： Yong Hyun Kim ,  Chang Kyun Park ,  Young Gi Kim ,  Duck Ho Kim ,  Kyung In Min ,  Sang Su Choi

    IPC分类号： H01L31/0463 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0445 ,  H01L31/0465 ,  H01L31/0376

    摘要： Disclosed is a thin film type solar cell which prevents short circuit from occurring between a first electrode and a second electrode due to a burr produced in a separation part, thereby preventing an output from being reduced. The thin film type solar cell includes a substrate, a first electrode disposed over the substrate and being apart from an adjacent first electrode by a first separation part, a semiconductor layer disposed over the first electrode and being apart from an adjacent semiconductor layer by a contact part and a second separation part, and a second electrode disposed over the semiconductor layer and being apart from an adjacent second electrode by the second separation part. The semiconductor layer contacts the substrate through the first separation part, and the second electrode contacts the first electrode through the contact part. A height of a burr produced in the second separation part is lower than a height between the first electrode and the second electrode.

    Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
    19.
    发明授权
    Fabricating thin-film optoelectronic devices with added rubidium and/or cesium 有权

    公开(公告)号：US10658532B2

    公开(公告)日：2020-05-19

    申请号：US16077034

    申请日：2017-01-27

    申请人： FLISOM AG

    发明人： Patrick Reinhard ,  Adrian Chirila

    IPC分类号： H01L31/032 ,  H01L31/0445 ,  H01L21/02 ,  H01L31/0352 ,  H01L31/0392

    摘要： A method for fabricating thin-film optoelectronic devices (100), the method comprising: providing a alkali-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most 1/2 and at least 1/2000 of the comprised amount of Rb and/or Cs. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.