公开(公告)号：US11054320B2

公开(公告)日：2021-07-06

申请号：US16675727

申请日：2019-11-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Arthur W. Ellis ,  Richard A. Haight ,  James B. Hannon ,  Rudolf M. Tromp

IPC: G01B11/16 ,  G01L1/24

Abstract: A force detector and method for using the same include a lens and a cantilever below the lens. A laser above the lens is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the lens and the cantilever based on interference between the light reflected from the surface and the light reflected from the cantilever.

公开(公告)号：US10749050B2

公开(公告)日：2020-08-18

申请号：US15401381

申请日：2017-01-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard A. Haight ,  James B. Hannon ,  Satoshi Oida

IPC: H01L31/0445 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/032 ,  H01L31/072 ,  H01L31/0216

Abstract: A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

公开(公告)号：US20200072687A1

公开(公告)日：2020-03-05

申请号：US16675727

申请日：2019-11-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Arthur W. Ellis ,  Richard A. Haight ,  James B. Hannon ,  Rudolf M. Tromp

IPC: G01L1/24 ,  G01B11/16

Abstract: A force detector and method for using the same include a lens and a cantilever below the lens. A laser above the lens is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the lens and the cantilever based on interference between the light reflected from the surface and the light reflected from the cantilever.

公开(公告)号：US20200044107A1

公开(公告)日：2020-02-06

申请号：US16595959

申请日：2019-10-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC: H01L31/075 ,  H01L31/032 ,  H01L31/18 ,  H01L31/0328 ,  H01L31/077

Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

公开(公告)号：US20190355856A1

公开(公告)日：2019-11-21

申请号：US15979802

申请日：2018-05-15

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Douglas M. Bishop ,  Richard A. Haight ,  Yu Luo

IPC: H01L31/032 ,  H01L31/05 ,  H02S40/38 ,  H01L31/0224 ,  H01L31/18

Abstract: A method of fabricating a photovoltaic device includes performing fabrication operations to form the photovoltaic device. The fabrication operations include replacing a portion of selenium with sulfur in a copper zinc tin sulfur selenium alloy (CZTSSe) material arranged on a substrate to form a sulfur enriched CZTSSe material to alter a band gap of the CZTSSe material. The fabrication operations include removing surface secondary phases or degraded portions of the sulfur enriched CZTSSe material to form a single phase sulfur enriched CZTSSe material. The fabrication operations further include replacing the substrate in contact with the single phase sulfur enriched CZTSSe material with a different contact material to form an exfoliated sulfur enriched CZTSSe device.

公开(公告)号：US10319871B2

公开(公告)日：2019-06-11

申请号：US16028249

申请日：2018-07-05

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Supratik Guha ,  Oki Gunawan ,  Richard A. Haight ,  Yun Seog Lee

IPC: H01L31/072 ,  H01L31/032 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/07

Abstract: Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

公开(公告)号：US20180374971A1

公开(公告)日：2018-12-27

申请号：US15951288

申请日：2018-04-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Talia S. Gershon ,  Richard A. Haight ,  Saurabh Singh ,  Teodor K. Todorov

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0326 ,  H01L31/18 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method of preparing a Ag2ZnSn(S,Se)4 compound, including dissolving selenourea (SeC(NH2)2) in an aprotic solvent, and dissolving a silver salt, a zinc salt, and a tin salt in the aprotic solvent with the selenourea to form a metal solution; and coating the metal solution onto a substrate to form an Ag2ZnSn(S,Se)4 compound layer on the substrate.

公开(公告)号：US20180315878A1

公开(公告)日：2018-11-01

申请号：US16028249

申请日：2018-07-05

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Supratik Guha ,  Oki Gunawan ,  Richard A. Haight ,  Yun Seog Lee

IPC: H01L31/072 ,  H01L31/032 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/07

CPC classification number: H01L31/072 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0326 ,  H01L31/0327 ,  H01L31/0392 ,  H01L31/07 ,  Y02E10/50

Abstract: Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

公开(公告)号：US10101224B2

公开(公告)日：2018-10-16

申请号：US15445019

申请日：2017-02-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Arthur W. Ellis ,  Richard A. Haight ,  James B. Hannon ,  Rudolf M. Tromp

IPC: G01L1/00 ,  G01L1/24 ,  G01B11/16

Abstract: A force detector and method for using the same includes a lens. A cantilever is below the movable lens. A laser above the movable lens emits a beam of light through the movable lens, such that light reflects from the lens and the cantilever. A camera is configured to capture images produced by the light reflected from the lens and the light reflected from the cantilever. A processor is configured to determine a force between the movable lens and the cantilever based on a change in phase of the interference rings.

公开(公告)号：US20180204970A1

公开(公告)日：2018-07-19

申请号：US15409142

申请日：2017-01-18

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Arthur W. Ellis ,  Richard A. Haight ,  James B. Hannon ,  Satoshi Oida

IPC: H01L31/0725 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0272 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L31/0326 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.