Abstract:
The present application discloses methods and systems for scanning an object. The scanning system provides a first detector region having a thickness of at least 2 mm and a second detector region having a thickness of at least 5 mm. The second detector region is arranged to receive radiation that has passed through the first detector region. The method includes irradiating the object with radiation having having a peak energy of at least 1 MeV, and detecting the first profile radiation after it has interacted with or passed through the object in order to provide information relating to the object.
Abstract:
Apparatus, including a sample-support that retains a sample in a plane having an axis, the plane defining first and second regions separated by the plane. A source-mount in the first region rotates about the axis, and an X-ray source on the source-mount directs first and second incident beams of X-rays to impinge on the sample at first and second angles along beam axes that are orthogonal to the axis. A detector-mount in the second region moves in a plane orthogonal to the axis and an X-ray detector on the detector-mount receives first and second diffracted beams of X-rays transmitted through the sample in response to the first and second incident beams, and outputs first and second signals, respectively, in response to the received first and second diffracted beams. A processor analyzes the first and the second signals so as to determine a profile of a surface of the sample.
Abstract:
Methods and systems for performing measurements of semiconductor structures and materials based on scatterometry measurement data are presented. Scatterometry measurement data is used to generate an image of a material property of a measured structure based on the measured intensities of the detected diffraction orders. In some examples, a value of a parameter of interest is determined directly from the map of the material property of the measurement target. In some other examples, the image is compared to structural characteristics estimated by a geometric, model-based parametric inversion of the same measurement data. Discrepancies are used to update the geometric model of the measured structure and improve measurement performance. This enables a metrology system to converge on an accurate parametric measurement model when there are significant deviations between the actual shape of a manufactured structure subject to model-based measurement and the modeled shape of the structure.
Abstract:
Apparatus and methods for performing small angle X-ray scattering (SAXS) at low (cryogenic) temperatures for determining the structure of and changes in the structure of proteins, DNA, RNA, and other biological molecules and biomolecular assemblies and structures. A cryogenic, small angle X-ray scattering (SAXS) application sample holder, includes a sample cell including a base portion and at least two parallel walls disposed on the base, wherein the sample cell has a liquid volume capacity defined by the walls and the base portion of 0.001 to 10 microliters. A method for performing cryogenic SAXS on a sample includes the steps of providing a sample biomolecule solution containing an aqueous buffer, a biomolecule, and a cryoprotectant agent, wherein the cryoprotectant agent comprises up to 60% (w/w) of the biomolecule solution, and other known components as necessary to solubilize and stabilize the biomolecule, in a sample holder of claim 1 or 18, cryogenically cooling the sample solution in the sample holder at a rate equal to or greater than 100 K/sec without ice formation, and examining the cooled sample using small angle X-ray scattering by passing a beam of X-rays through the sample.
Abstract:
Radiation is directed at an object, and radiation scattered by the object is sensed. An angular distribution of scatter in the sensed scattered radiation relative to a path of the radiation directed at the object is determined, and the angular distribution is evaluated. One or more atomic numbers, or effective atomic numbers, of materials composing the object is determined based on evaluating the angular distribution.
Abstract:
In accordance with an embodiment, a measurement apparatus includes a stage to hold a substrate, an electromagnetic wave applying unit, a detector, and first and second calculation units. The electromagnetic wave applying unit generates electromagnetic waves and applies it to the substrate. The detector detects the electromagnetic waves scattered or reflected by the substrate and measure the intensity of the electromagnetic waves. The first calculation unit processes a signal from the detector to create a first reflectance profile, fit the first reflectance profile to a second reflectance profile prepared by a simulation, thereby calculating thickness and density of an analytic model which is set so that the periodic structure and the membranous structure are regarded as a single mixed layer. The second calculation unit calculates, from a sectional shape of the periodic structure and the calculated thickness and density, the density of the second material after a volume change.
Abstract:
The present invention provides a method of evaluating the neutron scattering length density, capable of accurately determining the neutron scattering length density. The present invention relates to a method of evaluating the neutron scattering length density of scatterers in a material, including determining the neutron scattering length density based on a scattering intensity curve obtained by neutron scattering measurement, with use of a scattering intensity curve obtained by X-ray scattering measurement.
Abstract:
An X-ray analyzing system for x-ray scattering analysis having an x-ray source for generating a beam of x-rays propagating along a transmission axis (3), at least one hybrid slit (5b) with an aperture which defines the shape of the cross section of the beam, a sample on which the beam shaped by the hybrid slit (5b) is directed and an X-ray detector for detecting x-rays originating from the sample. The hybrid slit (5b) has at least three hybrid slit elements (7), each hybrid slit element (7) having a single crystal substrate (8) bonded to a base (9) with a taper angle α≠0. The single crystal substrates (8) of the hybrid slit elements (7) limit the aperture and the hybrid slit elements (7) are staggered with an offset along the transmission axis (3). The X-ray analyzing system has improved resolution and signal to noise ratio.
Abstract:
An apparatus for examining the surface of a crystalline sample uses in-plane grazing incidence diffraction with a position-sensitive detector. The x-ray source illuminates an extended region of the sample and, for crystal sections having the appropriate lattice orientation, an elongated diffraction signal is produced. The relative position of the sample and the x-ray beam may then be changed to illuminate different regions of the sample so that the diffraction signal corresponds to these other regions. By scanning across the entire sample, a spatial profile of the sample surface may be generated. The system may be used to locate crystal boundaries, defects, or the presence of attenuating materials on the sample surface.
Abstract:
The present application discloses methods and systems for scanning an object. The scanning system provides a first detector region having a thickness of at least 2 mm and a second detector region having a thickness of at least 5 mm. The second detector region is arranged to receive radiation that has passed through the first detector region. The method includes irradiating the object with radiation having having a peak energy of at least 1 MeV, and detecting the first profile radiation after it has interacted with or passed through the object in order to provide information relating to the object.