公开(公告)号：US10177139B2

公开(公告)日：2019-01-08

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L23/528 ,  B81B3/00 ,  H01L27/06 ,  B06B1/02 ,  B81B7/00 ,  B81C1/00 ,  H01L21/3213 ,  H01L21/56 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  A61B8/00 ,  H01L27/092

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US10175206B2

公开(公告)日：2019-01-08

申请号：US15689863

申请日：2017-08-29

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20190000422A1

公开(公告)日：2019-01-03

申请号：US16022841

申请日：2018-06-29

Applicant: Butterfly Network, Inc.

Inventor： Lawrence C. West ,  Kailiang Chen ,  Tyler S. Ralston ,  Sarp Satir ,  Jaime Scott Zahorian

IPC: A61B8/08 ,  G01S15/89 ,  G01S7/52

Abstract: Ultrasound devices configured to perform high-intensity focused ultrasound (HIFU) are described. An ultrasound device may include HIFU units configured to emit high acoustic intensities and elasticity detectors configured to determine characteristics of the target area of a human body based on the elasticity of the target area. The elasticity detectors may determine, e.g., whether the target area is healthy, and if not, the type cell in need of treatment (e.g., the type of cancer cell present in the target area). In one example, the elasticity detectors may be configured to determine the stiffness of the target area, which may provide an indication as to the type of cell present in the area, by estimating the velocity of a shear wave propagating away from the target area. The shear wave may arise in response to the application of an ultrasound wave to the target area.

公开(公告)号：US20180364342A1

公开(公告)日：2018-12-20

申请号：US16109457

申请日：2018-08-22

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Tyler S. Ralston ,  Keith G. Fife

IPC: G01S7/52 ,  G01S15/89 ,  G01S7/521 ,  A61B7/04

Abstract: Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.

公开(公告)号：US10094917B2

公开(公告)日：2018-10-09

申请号：US15659134

申请日：2017-07-25

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Tyler S. Ralston ,  Keith G. Fife

IPC: G01S7/00 ,  G01S7/521 ,  H03K17/687 ,  G01S7/52 ,  G01S15/89

Abstract: Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.

公开(公告)号：US20180257927A1

公开(公告)日：2018-09-13

申请号：US15453846

申请日：2017-03-08

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Jaime Scott Zahorian

IPC: B81C1/00 ,  B81B7/00 ,  B06B1/06 ,  B06B1/02

CPC classification number: B81C1/00238 ,  B06B1/0292 ,  B06B1/0622 ,  B81B7/008 ,  B81B2201/038 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180210073A1

公开(公告)日：2018-07-26

申请号：US15934150

申请日：2018-03-23

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Tyler S. Ralston

IPC: G01S7/524 ,  H03K19/0175 ,  G01S7/521

CPC classification number: G01S7/524 ,  A61B8/4483 ,  A61B8/54 ,  G01S7/5202 ,  G01S7/5208 ,  G01S7/52096 ,  G01S7/521 ,  H03K19/017545

Abstract: Apparatus and methods are provided directed to a device, including at least one ultrasonic transducer, a multi-level pulser coupled to the at least one ultrasonic transducer; the multi-level pulser including a plurality of input terminals configured to receive respective input voltages, an output terminal configured to provide an output voltage, and a signal path between a first input terminal and the output terminal including a first transistor having a first conductivity type coupled to a first diode and, in parallel, a second transistor having a second conductivity type coupled to a second diode.

公开(公告)号：US20180130795A1

公开(公告)日：2018-05-10

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L27/06 ,  H01L27/092 ,  A61B8/00 ,  B06B1/02 ,  B81B3/00 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/56 ,  H01L21/3213 ,  B81C1/00 ,  B81B7/00

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US09958537B2

公开(公告)日：2018-05-01

申请号：US15645771

申请日：2017-07-10

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Tyler S. Ralston

IPC: A61B8/00 ,  G01S7/524 ,  G01S7/521 ,  H03K19/0175

CPC classification number: G01S7/524 ,  A61B8/4483 ,  A61B8/54 ,  G01S7/5202 ,  G01S7/5208 ,  G01S7/52096 ,  G01S7/521 ,  H03K19/017545

Abstract: Apparatus and methods are provided directed to a device, including at least one ultrasonic transducer, a multi-level pulser coupled to the at least one ultrasonic transducer; the multi-level pulser including a plurality of input terminals configured to receive respective input voltages, an output terminal configured to provide an output voltage, and a signal path between a first input terminal and the output terminal including a first transistor having a first conductivity type coupled to a first diode and, in parallel, a second transistor having a second conductivity type coupled to a second diode.

公开(公告)号：US09944514B2

公开(公告)日：2018-04-17

申请号：US15626801

申请日：2017-06-19

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: H01L29/84 ,  B81C1/00 ,  B06B1/02 ,  G01N29/24 ,  H04R19/00 ,  B81B7/00

CPC classification number: B81C1/00301 ,  B06B1/02 ,  B06B1/0292 ,  B81B7/007 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2201/0195 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01N29/2406 ,  H01L29/84 ,  H04R19/005

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.