公开(公告)号：US07629070B2

公开(公告)日：2009-12-08

申请号：US10664862

申请日：2003-09-22

申请人： Christof Mehler ,  Martin Weber ,  Michael Senge ,  Thomas Keβler ,  Ingolf Hennig

发明人： Christof Mehler ,  Martin Weber ,  Michael Senge ,  Thomas Keβler ,  Ingolf Hennig

IPC分类号： H01M8/02

CPC分类号： H01B1/24 ,  H01M8/0213 ,  H01M8/0221 ,  H01M8/0226

摘要： The bipolar plate for PEM fuel cells made of a polymer blend which is filled with conductivity-enhancing carbon fillers and which includes at least two mutually nonmiscible blend polymers, is distinguished by the fact that the at least two blend polymers form a co-continuous structure and the carbon fillers are at a higher concentration in one of the blend polymers or in the phase between the blend polymers, or that a blend polymer in which the carbon fillers are at a higher concentration forms a continuously conductive matrix in which the at least one further blend polymer is intercalated.

摘要翻译： 由填充有导电性增强碳填料并且包括至少两种相互不混溶的共混聚合物的聚合物共混物制成的PEM燃料电池用双极板的特征在于，所述至少两种共混聚合物形成共连续结构 并且碳填料在共混聚合物之一中或在共混聚合物之间的相中处于较高浓度，或者其中碳填料处于较高浓度的共混聚合物形成连续导电基质，其中至少一种 进一步掺合聚合物被插入。

公开(公告)号：US07538866B2

公开(公告)日：2009-05-26

申请号：US11789228

申请日：2007-04-24

申请人： Wolfgang Heine ,  Dieter Spriegel ,  Michael Stockmann ,  Martin Weber

发明人： Wolfgang Heine ,  Dieter Spriegel ,  Michael Stockmann ,  Martin Weber

IPC分类号： G01N21/88

CPC分类号： G01N21/896 ,  G01N21/8901 ,  G01N21/958 ,  G01N33/386 ,  G01N2021/4716 ,  G01N2021/4735 ,  G01N2021/8905 ,  G01N2201/0642 ,  G01N2201/1042

摘要： In one aspect, an optical sensor is used to detect defects, which can appear on smooth surfaces, is provided. The sensor includes a telecentric laser scanner and a detection unit. The scanner includes a laser for the approximately perpendicular illumination of a smooth surface, a scanning mirror, and a telecentric optical system for guiding illumination and detection beams the detection unit includes an optical detector system, a central diaphragm, which is concentrically positioned in the vicinity of the optical detector system in the direction toward the telecentric laser scanner, a highly sensitive photomultiplier for detecting scattered light, which emanates from defects on smooth surfaces, and a slit diaphragm arranged upstream of the photomultiplier.

摘要翻译： 在一个方面，提供光学传感器来检测出现在光滑表面上的缺陷。 传感器包括远心激光扫描仪和检测单元。 扫描器包括用于光滑表面的大致垂直照明的激光器，扫描镜和用于引导照射和检测光束的远心光学系统，该检测单元包括光学检测器系统，中心光阑，其同心地位于附近 的光检测器系统朝向远心激光扫描器的方向，用于检测由平滑表面上的缺陷产生的散射光的高灵敏度光电倍增器和布置在光电倍增管上游的狭缝光阑。

公开(公告)号：US07470323B2

公开(公告)日：2008-12-30

申请号：US11870565

申请日：2007-10-11

申请人： Wilfried von Ammon ,  Katsuhiko Nakai ,  Martin Weber ,  Herbert Schmidt ,  Atsushi Ikari

发明人： Wilfried von Ammon ,  Katsuhiko Nakai ,  Martin Weber ,  Herbert Schmidt ,  Atsushi Ikari

IPC分类号： C30B15/20

CPC分类号： C30B15/00 ,  C30B29/06

摘要： The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p−-doped semiconductor wafers which are epitaxially coated.

摘要翻译： Czochralski方法用于从硅产生p掺杂和外延涂覆的半导体晶片，其中拉取单晶硅，并且在拉时，掺杂硼，氢和氮，并将由此获得的单晶加工形成 外延涂覆的p掺杂半导体晶片。

公开(公告)号：US20080311342A1

公开(公告)日：2008-12-18

申请号：US11906447

申请日：2007-10-02

申请人： Timo Muller ,  Martin Weber ,  Gudrun Kissinger

发明人： Timo Muller ,  Martin Weber ,  Gudrun Kissinger

IPC分类号： B32B3/24 ,  C01B33/021

CPC分类号： C30B15/203 ,  C30B29/06 ,  C30B33/02 ,  Y10T428/24298 ,  Y10T428/26

摘要： Silicon wafers in the entire volume of which crystal lattice vacancies are the prevalent point defect type, have a rotationally symmetric region whose width is at least 80% of the wafer radius, crystal lattice vacancy agglomerates of at least 30 nm in a density ≦6·103 cm−3, crystal lattice vacancy agglomerates of from 10 nm to 30 nm in a density of 1·105 cm−3 to 3·107 cm−3, OSF seeds in a density of 0 to 10 cm−2, and an average bulk BMD density of 5·108 cm−3 to 5·109 cm−3, which varies at most by a factor of 10 radially over the entire silicon wafer, and a BMD-free layer on the front side, wherein the first BMD is found at a depth of at least 5 μm and on average at a depth of at least 8 μm.

摘要翻译： 其晶格空位为整体体积的硅晶片为普遍点缺陷型，具有宽度为晶片半径的至少80％的旋转对称区域，密度<= 6.103至少为30nm的晶格空位聚集体 cm-3，密度为1.105cm-3至3.107cm-3的10nm至30nm的晶格空位团聚体，密度为0至10cm -2的OSF晶种，平均体积BMD密度为5.108 cm -3至5.109cm -3，其在整个硅晶片上径向上变化10倍，并且在前侧上变化为不含BMD的层，其中在至少5μm的深度处发现第一BMD 平均至少8 m的深度。

公开(公告)号：US20080207830A1

公开(公告)日：2008-08-28

申请号：US12088759

申请日：2006-09-25

申请人： Martin Weber ,  Axel Gottschalk ,  Peter Ittemann ,  Hans Honl

发明人： Martin Weber ,  Axel Gottschalk ,  Peter Ittemann ,  Hans Honl

IPC分类号： C08L51/00

CPC分类号： C08L33/12 ,  C08F279/02 ,  C08F285/00 ,  C08L25/12 ,  C08L35/06 ,  C08L51/04 ,  C08L55/02 ,  C08L2205/03 ,  C08L2666/02 ,  C08L2666/04

摘要： The present invention relates to thermoplastic molding compositions, comprising a mixture composed of (A) from 30 to 69% by weight, based on the entirety of components (A), (B) and (C), of a methyl methacrylate polymer, (B) from 30 to 69% by weight, based on the entirety of components (A), (B) and (C), of a copolymer, obtainable via polymerization of a vinylaromatic monomer and of a vinyl cyanide, and (C) from 1 to 40% by weight, based on the entirety of components (A), (B) and (C), of a graft copolymer, obtainable from (C1) from 60 to 90% by weight, based on (C), of an agglomerated core based on a 1,3-diene, (C2) from 5 to 20% by weight, based on (C), of a first graft shell composed of a vinylaromatic monomer, of an alkyl methacrylate, and, if appropriate, of a crosslinking monomer, and (C3) from 5 to 20% by weight, based on (C), of a second graft shell composed of an alkyl(meth)acrylate polymer, with the proviso that the ratio by weight of (C2) to (C3) is in the range from 2:1 to 1:2, and it is inventively significant here that the core (C1) has monomodal particle size distribution, the average particle size D50 of the core (C1) (determined by the method mentioned in the description) is in the range from 300 to 400 nm, and the difference between the refractive index (nD-C) of the entire component (C) and the refractive index (nD-AB) of the entire matrix of components (A) and (B) is in the range from 0.003 to 0.008, each of the refractive indices being measured by the methods mentioned in the description, and also to a process for preparation of these molding compositions, to their use, and to the moldings obtainable therefrom.

摘要翻译： 本发明涉及热塑性模塑组合物，其包含基于甲基丙烯酸甲酯聚合物（A），（B）和（C）的全部（A），（B）和（C）的（A）30至69重量％ B）基于通过乙烯基芳族单体和乙烯基氰的聚合可获得的共聚物的组分（A），（B）和（C））的总量的30至69重量％，和（C） 1〜40重量％，基于（C）60〜90重量％（C），（C）可以由（C1）得到的接枝共聚物的成分（A），（B）和（C） 基于（C）5-20重量％的由乙烯基芳族单体组成的第一接枝壳，甲基丙烯酸烷基酯和（如果合适的话）的基于1,3-二烯的聚集的核心， 的交联单体，和（C3）基于（C）5-20重量％的由（甲基）丙烯酸烷基酯聚合物组成的第二接枝壳，条件是（C2）的重量比 至（C3）的比例在2:1至1:2的范围内 在本发明中，芯（C1）具有单峰粒度分布，芯（C1）的平均粒径D <50>（由说明书中提及的方法确定）在 300至400nm的范围，以及整个组分（C）的折射率（n-D-C-C）与折射率（n> D < 组分（A）和（B）的整个基质的AB）在0.003至0.008的范围内，每个折射率通过说明书中提及的方法测量，并且还涉及制备这些模塑组合物的方法 ，使用，以及可从其获得的模制品。

公开(公告)号：US20080207821A1

公开(公告)日：2008-08-28

申请号：US11917552

申请日：2006-06-13

申请人： Martin Weber ,  Klaus Muhlbach ,  Peter Ittemann ,  Stefan Grutke ,  Nicolas Inchaurrondo

发明人： Martin Weber ,  Klaus Muhlbach ,  Peter Ittemann ,  Stefan Grutke ,  Nicolas Inchaurrondo

IPC分类号： C08L37/00

CPC分类号： C08L25/04 ,  C08K7/14 ,  C08L25/18 ,  C08L35/06 ,  C08L2666/06 ,  C08L2666/04

摘要： Molding compositions comprising: a composition (I) present in an amount of 10 to 100% by weight, based on the molding composition, wherein the composition (I) comprises: (A) 40 to 95% by weight, based on the composition (I), of a copolymer comprising: α-methylstyrene in an amount of 55 to 90% by weight, acrylonitrile in an amount of 10 to 50% by weight, and one or more other monomers in an amount of 0 to 5% by weight, wherein the percentages by weight of the α-methylstyrene, the acrylonitrile and the one or more other monomers are based on the weight of component (A); (B) 2.5 to 75% by weight, based on the composition (I), of a polymer comprising: a vinylaromatic monomer in an amount of 60 to 90% by weight, acrylonitrile in an amount of 8.01 to 39.8% by weight, and maleic anhydride in an amount of 0.2 to 1.99% by weight, wherein the percentages by weight of the vinylaromatic monomer, the acrylonitrile and the maleic anhydride are based on the weight of component (B); and (C) 2.5 to 60% by weight, based on the composition (I), of glass fibres.

摘要翻译： 基于成型组合物，组合物（I）的含量为10至100重量％，其中组合物（I）包含：（A）40至95重量％，基于组合物（ I）的共聚物，其包含：α-甲基苯乙烯，其量为55至90重量％，丙烯腈的量为10至50重量％，和一种或多种其它单体的量为0至5重量％ ，其中所述α-甲基苯乙烯，所述丙烯腈和所述一种或多种其它单体的重量百分比基于组分（A）的重量; （B）基于组合物（I）的2.5至75重量％的聚合物，其包含：60至90重量％的乙烯基芳族单体，量为8.01至39.8重量％的丙烯腈，和 马来酸酐的量为0.2-1.95％，其中乙烯基芳族单体，丙烯腈和马来酸酐的重量百分比基于组分（B）的重量; 和（C）基于玻璃纤维的组成（I）为2.5〜60重量％。

公开(公告)号：US20080113171A1

公开(公告)日：2008-05-15

申请号：US11857460

申请日：2007-09-19

申请人： Katsuhiko Nakai ,  Wilfried von Ammon ,  Sei Fukushima ,  Herbert Schmidt ,  Martin Weber

发明人： Katsuhiko Nakai ,  Wilfried von Ammon ,  Sei Fukushima ,  Herbert Schmidt ,  Martin Weber

IPC分类号： B32B7/02 ,  C30B15/14

CPC分类号： H01L21/3225 ,  C30B15/206 ,  C30B29/06 ,  C30B33/00 ,  Y10T428/24992

摘要： Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ≧20 μm below the wafer surface in the range of 5×1011/cm3, and a density of BMDs with sizes of ≧300 nm≦1×107/cm3, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.

摘要翻译： 在5×10 11 / cm 3范围内，在晶片表面下方>20μm处的位置具有20至40nm的BMD密度的硅晶片，以及 尺寸> = 300nm的BMD的密度显示减少的滑脱位错和翘曲。 将晶片从在特定条件下生长的晶体切片，然后进行低温热处理和高温退火。

公开(公告)号：US20080096371A1

公开(公告)日：2008-04-24

申请号：US11870565

申请日：2007-10-11

申请人： Wilfried von Ammon ,  Katsuhiko Nakai ,  Martin Weber ,  Herbert Schmidt ,  Atsushi Ikari

发明人： Wilfried von Ammon ,  Katsuhiko Nakai ,  Martin Weber ,  Herbert Schmidt ,  Atsushi Ikari

IPC分类号： H01L21/20

CPC分类号： C30B15/00 ,  C30B29/06

摘要： The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p−-doped semiconductor wafers which are epitaxially coated.

摘要翻译： Czochralski方法用于从硅产生掺杂和外延涂覆的半导体晶片，其中拉取单晶硅，并且在拉制期间掺杂有硼，氢和氮，并且单个 将由此获得的晶体进行处理以形成外延涂覆的p-SUP-掺杂的半导体晶片。

公开(公告)号：US07346954B2

公开(公告)日：2008-03-25

申请号：US10881927

申请日：2004-06-30

申请人： Martin Weber ,  Claus G. Wandres

发明人： Martin Weber ,  Claus G. Wandres

IPC分类号： B60S3/04 ,  B08B1/04

CPC分类号： B08B1/007 ,  A46B3/18 ,  B08B1/008 ,  B08B1/02 ,  B08B1/04

摘要： An arrangement (1) for cleaning surfaces (2), particularly curved or arched or wavy surfaces and/or surfaces (2) with varying direction of curvature, for example on vehicle chassis, metal strip or unflat plates. The arrangement has a cleaning device (3) having a tension resistant carrier band or belt with an upper section and a lower section and also at least two reversing rollers or rolls (4), which device acts with a section as a cleaning belt section (6) on the surface to be cleaned (2) with its inner side facing the reversing rollers or rolls (4). The device (1) has a presser device (8) with a guide (9) for the cleaning belt section (6), through which the cleaning belt section (6) can be pressed. It is provided that the presser device (8) includes at least one flexible cushion or buffer (10), and that the guide (9) acted on thereby is deflectable or bendable transversely to, or at right angles to, the surface to be cleaned (2).

摘要翻译： 一种用于清洁表面（2）的布置（1），特别是具有变化的曲率方向的曲面或拱形或波浪形表面和/或表面（2），例如在车辆底盘，金属条或不平坦板上。 该装置具有清洁装置（3），该清洁装置（3）具有带有上部和下部的抗张力载带或带，以及至少两个反向辊或辊（4），该装置作为清洁带部分 6）在被清洁表面（2）上，其内侧面向反转辊或辊（4）。 装置（1）具有一个具有用于清洁带部分（6）的引导件（9）的按压装置（8），清洁带部分（6）可以通过该按压装置按压。 设置压紧装置（8）包括至少一个柔性衬垫或缓冲器（10），并且其上作用的导向件（9）可以横向于或与待清洁的表面成直角地弯曲或弯曲 （2）。

公开(公告)号：US07329711B2

公开(公告)日：2008-02-12

申请号：US10495279

申请日：2002-10-29

申请人： Ingo Alig ,  Marco Holst ,  Martin Weber

发明人： Ingo Alig ,  Marco Holst ,  Martin Weber

IPC分类号： C08J5/00 ,  C08K3/34 ,  C08L63/00 ,  C08L63/02

CPC分类号： C08L81/06 ,  C08L63/00 ,  C08L2205/02 ,  C08L2666/22 ,  C08L71/00

摘要： The present invention relates to molding compositions comprising A) from 40 to 99% by weight of at least one epoxy resin, B) from 1 to 60% by weight of at least one polyarylene ether sulfone containing side- or end-groups selected from the group consisting of carboxy groups and anhydride groups, C) from 0 to 60% by weight of at least one polyarylene ether sulfone containing essentially no side- or end-groups selected from the group consisting of carboxy and anhydride groups, D) from 0 to 60% by weight of at least one filler, and E) from 0 to 40% by weight of one or more various additives, where the percentages by weight of components A to E together give 100%, and also to a process for preparing these molding compositions, and to their use, and to moldings obtainable therefrom.

摘要翻译： 本发明涉及模塑组合物，其包含A）40至99重量％的至少一种环氧树脂，B）1至60重量％的至少一种含有选自以下的侧链或端基的聚亚芳基醚砜 C）0至60重量％的至少一种基本上不含选自羧基和酸酐基团的侧基或末端基的聚亚芳基醚砜，D）从0至 60重量％的至少一种填料，和E）0至40重量％的一种或多种各种添加剂，其中组分A至E的重量百分比一起得到100％，以及制备这些添加剂的方法 模塑组合物及其用途，以及可从其获得的模制品。