公开(公告)号：US11515163B2

公开(公告)日：2022-11-29

申请号：US17142626

申请日：2021-01-06

Applicant: Applied Materials, Inc.

Inventor： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/285 ,  H01L23/532 ,  C23C16/26 ,  C01B32/184 ,  C23C16/455 ,  H01L21/02

Abstract: Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.

公开(公告)号：US11488856B2

公开(公告)日：2022-11-01

申请号：US17069195

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20220319841A1

公开(公告)日：2022-10-06

申请号：US17847454

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Rick Kustra ,  Bo Qi ,  Abhijit Basu Mallick ,  Kaushik Alayavalli ,  Jay D. Pinson

IPC: H01L21/02

Abstract: Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. A plasma may be generated from the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.

公开(公告)号：US11430655B2

公开(公告)日：2022-08-30

申请号：US17069008

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683

Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.

公开(公告)号：US11414751B2

公开(公告)日：2022-08-16

申请号：US16643967

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal sub-oxide film in a substrate feature and oxidizing the sub-oxide film to form a self-aligned structure comprising metal oxide. In some embodiments, a metal film is deposited and then treated to form the metal sub-oxide film. In some embodiments, the process of depositing and treating the metal film to form the metal sub-oxide film is repeated until a predetermined depth of metal sub-oxide film is formed within the substrate feature.

公开(公告)号：US20220223409A1

公开(公告)日：2022-07-14

申请号：US17144972

申请日：2021-01-08

Applicant: Applied Materials, Inc.

Inventor： Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.

公开(公告)号：US11315943B2

公开(公告)日：2022-04-26

申请号：US16643965

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Praburam Gopalraja ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L27/11582 ,  H01L27/11556

Abstract: Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.

公开(公告)号：US20210404046A1

公开(公告)日：2021-12-30

申请号：US17473448

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: C23C8/10 ,  C23C16/06 ,  C23C8/16 ,  C23C8/12 ,  H01L21/02 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/768

Abstract: Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

公开(公告)号：US11177128B2

公开(公告)日：2021-11-16

申请号：US16644150

申请日：2018-09-11

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick ,  Kurtis Leschkies ,  Steven Verhaverbeke ,  Shishi Jiang

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: Methods for forming a semiconductor structure including a silicon (Si) containing layer or a silicon germanium (SiGe) layer are provided. The methods include depositing a protective barrier (e.g., liner) layer over the semiconductor structure, forming a flowable dielectric layer over the liner layer, and exposing the flowable dielectric layer to high pressure steam. A cluster system includes a first deposition chamber configured to form a semiconductor structure, a second deposition chamber configured to perform a liner deposition process to form a liner layer, a third deposition chamber configured to form a flowable dielectric layer over the liner layer, an annealing chamber configured to expose the flowable oxide layer to high pressure steam.

公开(公告)号：US20210327752A1

公开(公告)日：2021-10-21

申请号：US17362304

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Samuel E. Gottheim ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/683 ,  H01L21/02 ,  H01L21/762 ,  H01J37/32 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high quality gapfill. Some embodiments utilize chemical vapor deposition, plasma vapor deposition, physical vapor deposition and combinations thereof to deposit the gapfill. The gapfill is of high quality and similar in properties to similarly composed bulk materials.