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    Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric
    202.
    发明授权
    Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric 有权
    具有金属栅极和高k钽氧化物或氮氧化钽栅极电介质的半导体器件

    公开(公告)号：US07060571B1

    公开(公告)日：2006-06-13

    申请号：US10777138

    申请日：2004-02-13

    Applicant: Minh Van Ngo ,  Christy Woo ,  James Pan ,  Paul R. Besser ,  Jinsong Yin

    Inventor： Minh Van Ngo ,  Christy Woo ,  James Pan ,  Paul R. Besser ,  Jinsong Yin

    IPC: H01L21/336

    CPC classification number: H01L21/28229 ,  H01L21/28079 ,  H01L21/28088 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

    Abstract: Microminiaturized semiconductor devices are fabricated with a replacement metal gate and a high-k tantalum oxide or tantalum oxynitride gate dielectric with significantly reduced carbon. Embodiments include forming an opening in a dielectric layer by removing a removable gate, depositing a thin tantalum film, as by PVD at a thickness of 25 Å to 60 Å lining the opening, and then conducting thermal oxidation, as at a temperature of 100° C. to 500° C., in flowing oxygen or ozone to form a high-k tantalum oxide gate dielectric layer, or in oxygen and N2O or ozone and N2O ammonia to form a high-k tantalum oxynitride gate dielectric. Alternatively, oxidation can be conducted in an oxygen or ozone plasma to form the high-k tantalum oxide layer, or in a plasma containing N2O and oxygen or ozone to form the high-k tantalum oxynitride gate dielectric layer.

    Abstract translation: 微型半导体器件由具有显着降低的碳的替代金属栅极和高k钽氧化物或氮氧化钽栅极电介质制成。 实施例包括通过去除可移除栅极来形成电介质层中的开口，沉积薄的钽膜，如通过PVD覆盖厚度为25埃至60埃的开口，然后在100℃的温度下进行热氧化 在500℃下，在流动的氧气或臭氧中形成高k氧化钽栅极电介质层，或在氧和N 2 O或臭氧和N 2 O 3 > O氨形成高k钽氮氧化物栅极电介质。 或者，可以在氧气或臭氧等离子体中进行氧化以形成高k钽氧化物层，或者在含有N 2 O的氧化物或臭氧的等离子体中进行氧化以形成高k氮氧化钽栅极 电介质层。

    Silicon on insulator substrate having improved thermal conductivity and method of its formation
    207.
    发明授权
    Silicon on insulator substrate having improved thermal conductivity and method of its formation 有权
    绝缘体上硅衬底具有改进的导热性及其形成方法

    公开(公告)号：US07015078B1

    公开(公告)日：2006-03-21

    申请号：US10658668

    申请日：2003-09-09

    Applicant: Qi Xiang ,  Jung-Suk Goo ,  James Pan

    Inventor： Qi Xiang ,  Jung-Suk Goo ,  James Pan

    IPC: H01L21/00

    CPC classification number: H01L29/78603 ,  H01L21/76254 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78687

    Abstract: A silicon on insulator (SOI) substrate includes a layer of silicon carbide beneath an insulating layer on which semiconductor devices are formed. The silicon carbide layer has a high thermal conductivity and provides beneficial dissipation of thermal energy generated by the devices. The SOI substrate may be formed by a bonding method. SOI MOSFET devices using the SOI substrate are also disclosed.

    Abstract translation: 绝缘体上硅（SOI）衬底包括在其上形成有半导体器件的绝缘层下方的碳化硅层。 碳化硅层具有高导热性，并提供由器件产生的热能的有益耗散。 SOI衬底可以通过接合方法形成。 还公开了使用SOI衬底的SOI MOSFET器件。

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