公开(公告)号：US5026856A

公开(公告)日：1991-06-25

申请号：US356059

申请日：1989-05-23

Applicant: Takashi Yatsunami ,  Akira Yazaki ,  Satoshi Inoue ,  Hitoshi Yamamoto ,  Masaharu Yokomoto ,  Jun Nomiyama ,  Shuichiro Noda

Inventor： Takashi Yatsunami ,  Akira Yazaki ,  Satoshi Inoue ,  Hitoshi Yamamoto ,  Masaharu Yokomoto ,  Jun Nomiyama ,  Shuichiro Noda

IPC: A23L3/3544 ,  A01N43/90 ,  A61K31/47 ,  A61K31/535 ,  A61P31/04 ,  C07D401/04 ,  C07D471/04 ,  C07D498/06

CPC classification number: C07D401/04 ,  C07D471/04 ,  Y02P20/55

Abstract: Isoindoline derivatives represented by the formula (I) and their salts are disclosed. ##STR1## There are many varieties for the compound depending on the types of residues R.sup.1 -R.sup.9 and X. The compounds can be prepared from quinoline derivatives of the formula (II) and an isoindoline derivatives of the formula (III). The compounds of formula (I) and their salts have excellent antibacterial activities against both gram positive and gram negative microorganisms. They can be used as a medicine, an agrichemical, and a food preservative.

公开(公告)号：US4939395A

公开(公告)日：1990-07-03

申请号：US268585

申请日：1988-11-08

Applicant: Ichiro Asano ,  Nobutaka Kihara ,  Satoshi Inoue

Inventor： Ichiro Asano ,  Nobutaka Kihara ,  Satoshi Inoue

IPC: G01D3/036 ,  G01R19/32

CPC classification number: G01R19/32 ,  G01D3/0365

Abstract: A temperature compensating circuit designed in two parts, a temperature-pulse width conversion circuit (X) and a temperature compensating circuit (Y.sub.N) permit the sharing of the temperature-pulse width conversion circuit by a plurality of temperature compensating circuits. Each temperature conversion circuit is relatively uncomplicated in construction, utilizing only resistors and a switch means. The temperature-pulse width conversion circuit utilizes a temperature sensitive element, like a thermistor, in a circuit with an operational amplifier. The output of the operational amplifier is supplied to a pulse width converter for generating the pulse width signal that carries the temperature compensation factor to be used in temperatures compensating the signal received by the temperature compensating circuit.

公开(公告)号：US09622319B2

公开(公告)日：2017-04-11

申请号：US13980571

申请日：2012-01-13

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H05B33/14 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00 ,  C23C14/04 ,  C23C14/54

CPC classification number: H05B33/145 ,  C23C14/042 ,  C23C14/54 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0002 ,  H01L51/56 ,  H01L2251/558 ,  Y10T428/24612

Abstract: A film formation substrate is arranged such that (i) a base end, in a y-axis direction, of a film-thickness-gradually-diminishing part of a first film overlaps a first film formation region, and (ii) a film-thickness-gradually-diminishing part of a second film is disposed on an outside, in the y-axis direction, of a second film formation region and overlaps the film-thickness-gradually-diminishing part of the first film so as to compensate for a gradually diminished thickness of the film-thickness-gradually-diminishing part.

公开(公告)号：US09231210B2

公开(公告)日：2016-01-05

申请号：US13696585

申请日：2011-05-02

Applicant: Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

Inventor： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC: H05B33/10 ,  H01L51/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

Abstract: A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

Abstract translation: 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。

公开(公告)号：US08906718B2

公开(公告)日：2014-12-09

申请号：US13976437

申请日：2011-12-20

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H05B33/04 ,  H05B33/10 ,  H01L33/00 ,  H01L51/00 ,  C23C14/04 ,  C23C16/04

CPC classification number: H01L21/02104 ,  C23C14/042 ,  C23C16/042 ,  H01L27/3211 ,  H01L33/005 ,  H01L51/0011 ,  H01L51/524 ,  H01L51/56 ,  H01L2251/566 ,  H05B33/04 ,  H05B33/10

Abstract: On a surface of a substrate (3) on which surface a vapor-deposited film is to be formed, a photoresist (13) is formed so as to have an opening in a sealing region including a display region (R1) which sealing region is formed by a sealing resin (11) of a frame shape. Then, luminescent layers (8R, 8G, and 8B) having a striped pattern are formed. Subsequently, the photoresist (13) is removed with the use of an exfoliative solution so as to form the luminescent layers (8R, 8G, and 8B) patterned with high definition.

Abstract translation: 在其上形成有蒸镀膜的基板（3）的表面上形成光致抗蚀剂（13），以在包括显示区域（R1）的密封区域内具有开口，所述显示区域（R1）的密封区域 由框状的密封树脂（11）形成。 然后，形成具有条纹图案的发光层（8R，8G，8B）。 随后，用去角质溶液去除光致抗蚀剂（13），以形成以高清晰度图案化的发光层（8R，8G和8B）。

公开(公告)号：US08828856B2

公开(公告)日：2014-09-09

申请号：US13980873

申请日：2012-01-13

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L21/22 ,  C23C16/00 ,  H01L27/32 ,  C23C14/04 ,  C23C14/56 ,  H01L51/56

CPC classification number: H01L27/3295 ,  C23C14/042 ,  C23C14/56 ,  H01L27/3211 ,  H01L27/3276 ,  H01L27/3283 ,  H01L51/56 ,  H01L2227/323

Abstract: Provided is a TFT substrate (10) on which vapor-deposited sections are to be formed by use of a vapor deposition device (50) which includes a vapor deposition source (85) having injection holes (86); and a vapor deposition mask (81) having opening (82) through which vapor deposition particles are deposited to form the vapor-deposited sections. The TFT substrate (10) includes pixels two-dimensionally arranged in a pixel region (AG); and wires (14) electrically connected to the respective pixels. The vapor-deposited sections (Q) are formed with gaps (X) therebetween, and the wires (14) having respective terminals that are disposed in the gaps (X).

Abstract translation: 提供了通过使用包括具有喷射孔（86）的气相沉积源（85）的蒸镀装置（50）形成蒸镀部的TFT基板（10）。 和具有开口（82）的气相沉积掩模（81），通过蒸镀掩模沉积气相沉积颗粒以形成气相沉积部分。 TFT基板（10）包括像素区域（AG）二维排列的像素。 以及电连接到各个像素的导线（14）。 气相沉积部分（Q）在它们之间形成有间隙（X），并且具有设置在间隙（X）中的各个端子的导线（14）。

公开(公告)号：US20140010957A1

公开(公告)日：2014-01-09

申请号：US14004894

申请日：2012-03-07

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC: C23C16/448

CPC classification number: C23C16/448 ,  C23C14/042 ,  C23C14/243 ,  H01L51/0003 ,  H01L51/56

Abstract: A vapor deposition particle emitting device (30) includes a hollow rotor (40) provided with a first and a second nozzle sections (50 and 60), a rolling mechanism, and heat exchangers (52 and 62), and when the rolling mechanism causes the rotor (40) to rotate, the heat exchangers (52 and 62) switch between cooling and heating in accordance with placement of the nozzle section so that that one of the nozzle sections which faces outward has a temperature lower than a temperature at which vapor deposition material turns into gas and the other nozzle section has a temperature equal to or higher than the temperature at which the vapor deposition material turns into the gas.

Abstract translation: 气相沉积粒子发射装置（30）包括设置有第一和第二喷嘴部分（50和60），滚动机构和热交换器（52和62）的中空转子（40），并且当滚动机构引起 转子（40）旋转，热交换器（52和62）根据喷嘴部分的放置而在冷却和加热之间切换，使得面向外的喷嘴部分之一的温度低于蒸气 沉积材料变成气体，另一个喷嘴部分的温度等于或高于气相沉积材料变成气体的温度。

公开(公告)号：US08618568B2

公开(公告)日：2013-12-31

申请号：US13259378

申请日：2010-04-08

Applicant: Tomoya Aoyama ,  Kohei Yokoyama ,  Rena Tsuruoka ,  Hideki Uchida ,  Toru Sonoda ,  Satoshi Inoue

Inventor： Tomoya Aoyama ,  Kohei Yokoyama ,  Rena Tsuruoka ,  Hideki Uchida ,  Toru Sonoda ,  Satoshi Inoue

IPC: H01L33/00

CPC classification number: H01L51/0013 ,  C23C14/048 ,  H01L51/56

Abstract: In a method for manufacturing a light-emitting device according to an embodiment of the present invention, one surface of a first substrate including a reflective layer including an opening, a light absorption layer formed over the reflective layer to cover the opening in the reflective layer, a protective layer formed over the light absorption layer and including a groove at a position overlapped with the opening in the reflective layer, and a material layer formed over the protective layer and a deposition surface of a second substrate are disposed to face each other and light irradiation is performed from the other surface side of the first substrate, so that an EL layer is formed in a region on the deposition surface of the second substrate, which is overlapped with the opening in the reflective layer.

Abstract translation: 在本发明的实施方式的发光装置的制造方法中，具有包括开口部的反射层的第一基板的一个面，形成在反射层上的光吸收层覆盖反射层的开口部 形成在所述光吸收层上并且在与所述反射层中的所述开口重叠的位置处的凹槽以及形成在所述保护层上方的材料层和所述第二基板的沉积表面上的保护层设置成彼此面对， 从第一基板的另一表面侧进行光照射，从而在第二基板的沉积表面上与反射层中的开口重叠的区域中形成EL层。

公开(公告)号：US20130340680A1

公开(公告)日：2013-12-26

申请号：US14004151

申请日：2012-03-05

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L21/02

CPC classification number: H01L51/0011 ,  C23C14/24 ,  C23C14/243 ,  C23C14/564 ,  H01L21/02104 ,  H01L51/001 ,  H01L51/56

Abstract: The vapor deposition particle injecting device (20) includes a crucible (22), a holder (21) having at least one injection hole (21a), and plate members (23 through 25) provided in the holder (21). The plate members (23 through 25) have respective openings (23a through 25a) corresponding to the injection hole (21a), and the plate members (23 through 25) are arranged away from each other in a direction perpendicular to the opening planes of the openings. The injection hole (21a) and the openings (23a through 25a) overlap each other in the plan view.

Abstract translation: 气相沉积粒子注入装置（20）包括坩埚（22），具有至少一个注入孔（21a）的保持器（21）和设置在保持器（21）中的板构件（23至25）。 板构件（23至25）具有与喷射孔（21a）相对应的相应的开口（23a至25a），并且板构件（23至25）在与 开口 注射孔（21a）和开口（23a至25a）在平面图中彼此重叠。

公开(公告)号：US20130323882A1

公开(公告)日：2013-12-05

申请号：US13985281

申请日：2012-03-07

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda ,  Satoshi Hashimoto

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda ,  Satoshi Hashimoto

IPC: H01L51/56 ,  H01L51/50

CPC classification number: H01L51/5012 ,  B05D1/60 ,  C23C14/042 ,  C23C14/243 ,  C23C14/542 ,  C23C14/564 ,  H01L51/0003 ,  H01L51/56

Abstract: A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is controlled so as to be at a temperature lower than a temperature at which a vapor deposition material turns into gas. Meanwhile, the intermediate nozzle section (51) is controlled by the heat exchanger (53) so as to be at a temperature between a temperature of the vapor deposition particle generating section (41) and a temperature of the vapor deposition particle emitting nozzle section (61).

Abstract translation: 气相沉积粒子注入装置（30）包括气相沉积粒子产生部分（41），由中间喷嘴部分（51），气相沉积粒子发射喷嘴部分（61）和热交换器 43，63，53）。 气相沉积粒子发射喷嘴部分（61）被控制在低于气相沉积材料变成气体的温度的温度。 同时，中间喷嘴部（51）由热交换器（53）控制，处于蒸镀微粒生成部（41）的温度与蒸镀微粒发射喷嘴部的温度 61）。