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公开(公告)号:US12245374B2
公开(公告)日:2025-03-04
申请号:US17982040
申请日:2022-11-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunseok Hong , Jungje Bang
IPC: H05K1/11
Abstract: An electronic device includes a housing, a first substrate, a second substrate, and an interposer disposed between the first substrate and the second substrate and configured to electrically connect the first substrate and the second substrate. The interposer includes a substrate, a first surface, a second surface, and a side surface. The interposer further includes a plurality of first conductive pads, a plurality of second conductive pads, a plurality of conductive posts, a plurality of third conductive terminals at least partially exposed on the first surface and electrically connected to the plurality of first conductive pads via a first conductive via (CV), and a plurality of fourth conductive terminals at least partially exposed on the second surface and electrically connected to the plurality of second conductive pads via a second CV.
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212.
公开(公告)号:US12245261B2
公开(公告)日:2025-03-04
申请号:US17657686
申请日:2022-04-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dalin Zhu , Eko Onggosanusi
IPC: H04W4/00 , H04W56/00 , H04W72/044 , H04W72/23 , H04W72/541 , H04W72/542
Abstract: Methods and apparatuses for channel and interference measurement in a wireless communication system. A method for operating a user equipment (UE) includes receiving a reporting setting and receiving a resource setting associated with the reporting setting. The reporting setting is configured with a higher layer parameter reportQuantity that is set to at least cri-SINR. The resource setting is configured with a higher layer parameter resourceType that is set to aperiodic, periodic, or semi-persistent. The method further includes receiving a first set of reference signals (RSs) through a first set of RS resources; receiving a second set of RSs through a second set of RS resources; measuring at least one RS in the first or second sets of RSs; and determining, based on the reporting setting and the measured at least one RS, one or more layer-1 signal-to-noise and interference ratios (L1-SINRs).
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213.
公开(公告)号:US12245094B2
公开(公告)日:2025-03-04
申请号:US18453641
申请日:2023-08-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungmin Moon , Himke Van Der Velde , Seunghoon Park , Byounghoon Jung
Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. This disclosure also relates to a cell reselection operation. A method of a terminal in a wireless communication system may include receiving a first scheduling information for a first frequency band from a base station, switching a bandwidth to the first frequency band according to the first scheduling information, starting a timer for the first frequency band, and switching the bandwidth to a second frequency band when the timer expires.
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公开(公告)号:US12244934B2
公开(公告)日:2025-03-04
申请号:US17728421
申请日:2022-04-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sun-Ae Kim , Seong Woon Kim , Kil Whan Lee , Sang Hoon Lee , Yong Kwon Cho , Sang Hoon Ha
IPC: H04N23/741 , G06T1/20 , G06T1/60 , G06T5/92
Abstract: A system on chip and a mobile device are provided, the mobile device including a processor that receives raw image data, processes the raw image data into floating-point format image data, and output the floating-point format image data; a memory that stores therein the floating-point format image data; and a display processing unit that receives the floating-point format image data stored in the memory therefrom, and performs high dynamic range (HDR) processing on the floating-point format image data.
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公开(公告)号:US12244686B2
公开(公告)日:2025-03-04
申请号:US17883917
申请日:2022-08-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sigyoung Koo , Buyong Um , Serin Kim
Abstract: An image sensor includes a non-volatile memory (NVM) storing a encoded private key and partial information of a private key, using first random numbers generated by repeating a first random number generation operation using the partial information of the private key, and a security circuit that performs a decryption operation on a cipher text received from a controller. The security circuit includes a self-recursive decoder that receives the encoded private key from the NVM during the decryption operation, repeats a second random number generation operation using the partial information of the private key to generate second random numbers, and uses the second random numbers to restore the encoded private key to the private key, and a crypto module that uses the restored private key to decrypt the cipher text.
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216.
公开(公告)号:US12244383B2
公开(公告)日:2025-03-04
申请号:US18046438
申请日:2022-10-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Md Saifur Rahman , Eko Onggosanusi
IPC: H04B7/06 , H04B7/0456
Abstract: A user equipment (UE) for channel state information (CSI) feedback comprises a transceiver configured to receive, from a base station (BS), configuration information for the CSI feedback, the configuration information indicating a number of antenna panels (Ng) at the BS and a codebook mode, wherein Ng>1 and each of the antenna panels comprises antenna ports with a first polarization (P1) and antenna ports with a second polarization (P2). The UE further comprises a processor operably connected to the transceiver, the processor configured to identify the number of antenna panels (Ng) at the BS, identify a codebook for the CSI feedback based on the codebook mode configured between a first codebook mode and a second codebook mode, and generate the CSI feedback using the identified codebook. The transceiver is further configured to transmit the generated CSI feedback to the BS.
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217.
公开(公告)号:US12244002B2
公开(公告)日:2025-03-04
申请号:US17348326
申请日:2021-06-15
Inventor: Qingsong Tu , Tan Shi , Gerbrand Ceder , Lincoln Miara
Abstract: A positive electrode for a solid-state lithium battery, the positive electrode including: a positive active material; and a first solid electrolyte, wherein a ratio λ of an average particle diameter of the positive active material to an average particle diameter of the first solid electrolyte is 3≤λ≤40, wherein the positive active material has an average particle diameter of 1 μm to 30 μm, and wherein the first solid electrolyte has an average particle diameter of 0.1 μm to 4 μm.
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218.
公开(公告)号:US12243888B2
公开(公告)日:2025-03-04
申请号:US17377729
申请日:2021-07-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyochul Kim , Younggeun Roh
IPC: H01L23/00 , H01L27/146 , H04N25/131
Abstract: An image sensor and an image processing method of the image sensor are provided. The image sensor includes: a spectral filter including a plurality of unit filters arranged in two dimensions and having different wavelengths; an image sensor including a pixel array receiving light transmitted through the spectral filter and outputting image signals; and a processor performing image processing on image signals output from the pixel array.
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公开(公告)号:US12243815B2
公开(公告)日:2025-03-04
申请号:US17680507
申请日:2022-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eui Bok Lee , Wandon Kim , Rakhwan Kim
IPC: H01L23/522 , H01L21/768 , H10D64/23
Abstract: A semiconductor device includes a front-end-of-line (FEOL) layer, which includes a plurality of individual devices, on a substrate, and first, second, and third metal layers sequentially stacked on the FEOL layer. The second metal layer includes an interlayer insulating layer and an interconnection line in the interlayer insulating layer. The interconnection line includes a lower via portion electrically connected to the first metal layer, an upper via portion electrically connected to the third metal layer, and a line portion between the lower via portion and the upper via portion. A line width of an upper portion of the interconnection line gradually decreases in a vertical direction away from the substrate, and a line width of a lower portion of the interconnection line gradually increases in a vertical direction away from the substrate.
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公开(公告)号:US12243785B2
公开(公告)日:2025-03-04
申请号:US18425390
申请日:2024-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Juyoun Kim
IPC: H01L21/8238 , H01L21/28 , H01L21/84 , H01L27/088 , H01L27/092 , H01L27/12 , H01L29/49 , H01L29/51 , H01L29/66
Abstract: In a semiconductor device, a first active area, a second active area, and a third active area are formed on a substrate. A first gate electrode is formed on the first active area, a second gate electrode is formed on the second active area, and a third gate electrode is formed on the third active area. The first gate electrode has a first P-work-function metal layer, a first capping layer, a first N-work-function metal layer, a first barrier metal layer, and a first conductive layer. The second gate electrode has a second capping layer, a second N-work-function metal layer, a second barrier metal layer, and a second conductive layer. The third gate electrode has a second P-work-function metal layer, a third capping layer, a third N-work-function metal layer, and a third barrier metal layer. The third gate electrode does not have the first and second conductive layers.
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