公开(公告)号：US5760536A

公开(公告)日：1998-06-02

申请号：US347133

申请日：1994-11-23

Applicant: Masato Susukida ,  Jun Hagiwara ,  Katsuto Nagano

Inventor： Masato Susukida ,  Jun Hagiwara ,  Katsuto Nagano

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A cold cathode electron source element having a cold cathode on a substrate. The cold cathode has dispersed in a cold cathode base particles of a conductive material having a lower work function than the base and a particle size which is sufficiently smaller than the thickness of the cold cathode. The element can be driven with a low voltage to induce high emission current in a stable manner. The cold cathode is easily processable. The element can have an increased surface area.

Abstract translation: 在基板上具有冷阴极的冷阴极电子源元件。 冷阴极已经分散在具有比碱低的功函数的导电材料的冷阴极基体颗粒中，并且其粒径足够小于冷阴极的厚度。 元件可以用低电压驱动，以稳定的方式感应高发射电流。 冷阴极易于加工。 元件可以具有增加的表面积。

公开(公告)号：US5753997A

公开(公告)日：1998-05-19

申请号：US618484

申请日：1996-03-19

Applicant: James E. Jaskie

Inventor： James E. Jaskie

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30457

Abstract: An electron emitter formed with a layer of diamond-like carbon having a diamond bond structure with an electrically active defect at an emission site. The electrically active defect acts like a very thin electron emitter with a very low work function and improved current characteristics, including an improved saturation current.

Abstract translation: 一种电子发射体，其形成有具有在发射部位具有电活性缺陷的金刚石键结构的类金刚石碳层。 电活性缺陷像非常薄的电子发射器一样具有非常低的功函数和改善的电流特性，包括改进的饱和电流。

公开(公告)号：US5747118A

公开(公告)日：1998-05-05

申请号：US510483

申请日：1995-08-02

Applicant: Rointan F. Bunshah ,  Hans J. Doerr ,  Shyankay Jou

Inventor： Rointan F. Bunshah ,  Hans J. Doerr ,  Shyankay Jou

IPC: C23C14/06 ,  C23C14/32 ,  C23C14/34 ,  C23C16/27 ,  H01J1/304 ,  B05D3/06 ,  C23C16/00

CPC classification number: C23C16/278 ,  C23C14/0611 ,  C23C14/32 ,  C23C14/34 ,  C23C16/272 ,  H01J1/3042 ,  H01J2201/30457

Abstract: A chemical transport process which is enhanced by a plasma formed in a substantially oxygen free hydrogen environment for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 .mu.m/hr. The process, performed at 80 to 180 Torr and a current density of about 1 amp/cm.sup.2 of substrate, can be scaled to deposit films on large areas. The invention further comprises doped diamond films produced by the process, said product having a well-faceted microcrystalline structure with x-ray diffraction pattern and Raman spectra indicative of a predominately diamond structure. The doped diamond films can function as n-type and p-type semiconductors.

Abstract translation: 一种化学传输过程，其通过在基本上无氧的氢气环境中形成的等离子体增强，用于在相对较低的沉积温度和约1m / hr的速率下形成微晶金刚石膜。 可以缩放在80至180托下进行的工艺和约1安培/厘米2的基板电流密度，从而在大面积上沉积薄膜。 本发明还包括通过该方法制备的掺杂金刚石薄膜，所述产品具有良好的具有X射线衍射图的微观结晶结构和表示主要是金刚石结构的拉曼光谱。 掺杂的金刚石膜可用作n型和p型半导体。

公开(公告)号：US5698328A

公开(公告)日：1997-12-16

申请号：US426223

申请日：1995-04-21

Applicant: Rointan F. Bunshah ,  Shyankay R. Jou ,  Hans J. Doerr

Inventor： Rointan F. Bunshah ,  Shyankay R. Jou ,  Hans J. Doerr

IPC: C23C14/06 ,  C23C14/32 ,  C23C14/34 ,  C23C16/27 ,  H01J1/304 ,  C01B31/06

CPC classification number: C23C16/278 ,  C23C14/0611 ,  C23C14/32 ,  C23C14/34 ,  C23C16/272 ,  H01J1/3042 ,  H01J2201/30457 ,  Y10T428/30

Abstract: Doped and undoped polycrystalline and noncrystalline diamond films produced by plasma enhanced chemical transport emit electrons into a vacuum in response to an applied electrical field. The field required to create emission is less than 20 V/.mu.m for doped polycrystalline films, can be in the range of 5 to 8 volts/.mu.m for undoped nanocrystalline films and may be 3 volts/.mu.m or less for doped nanocrystalline films. These materials exhibit emission properties which are continuous across the whole surface of the film.

Abstract translation: 通过等离子体增强的化学传输产生的掺杂和未掺杂的多晶和非结晶金刚石膜将电子响应于施加的电场发射到真空中。 对于掺杂的多晶膜，产生发射所需的场小于20V /μm，对于未掺杂的纳米晶体膜，其可以在5至8伏特/微米的范围内，并且对于掺杂的纳米晶体膜可以为3伏/微米或更小 。 这些材料具有在膜的整个表面上连续的发射特性。

公开(公告)号：US5686791A

公开(公告)日：1997-11-11

申请号：US479480

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J61/067 ,  H01J63/00 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J1/3042 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/00 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00 ,  H01J2329/8625 ,  Y10T428/292

Abstract: A field emission cathode for use in flat panel displays is disclosed comprising a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also disclosed along with the use of the cathode to form a fluorescent light source.

公开(公告)号：US5623180A

公开(公告)日：1997-04-22

申请号：US332179

申请日：1994-10-31

Applicant: Sungho Jin ,  Gregory P. Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory P. Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J37/06 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: The present invention provides methods and apparatus for making enhanced field emitters by coating particulate substrates with low voltage emissive material such as defect-rich diamond. These methods permit the advantageous, low-cost combination of low voltage emission with sharp-featured geometry.

Abstract translation: 本发明提供了通过用诸如缺陷丰富的金刚石的低电压发射材料涂覆颗粒基底来制造增强型场发射器的方法和装置。 这些方法允许利用尖锐特征的几何形状的低电压发射的有利且低成本的组合。

公开(公告)号：US5619092A

公开(公告)日：1997-04-08

申请号：US11595

申请日：1993-02-01

Applicant: James E. Jaskie

Inventor： James E. Jaskie

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/30457

Abstract: An electron emitter formed with a layer of diamond-like carbon having a diamond bond structure with an electrically active defect at an emission site. The electrically active defect acts like a very thin electron emitter with a very low work function and improved current characteristics, including in improved saturation current.

Abstract translation: 一种电子发射体，其形成有具有在发射部位具有电活性缺陷的金刚石键结构的类金刚石碳层。 电活性缺陷起着非常薄的电子发射体的作用，具有非常低的功函数和改善的电流特性，包括改进的饱和电流。

公开(公告)号：US5612712A

公开(公告)日：1997-03-18

申请号：US479270

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  G09G3/30 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J29/08 ,  H01J29/28 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864

Abstract: A matrix-addressed diode flat panel display of field emission type is described, utilizing a diode (two terminal) pixel structure. The flat panel display comprises a cathode assembly having a plurality of cathodes, each cathode including a layer of cathode conductive material and a layer of a low effective work-function material deposited over the cathode conductive material and an anode assembly having a plurality of anodes, each anode including a layer of anode conductive material and a layer of cathodoluminescent material deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive charged particle emissions from the cathode assembly, the cathodoluminescent material emitting light in response to the charged particle emissions. The flat panel display further comprises means for selectively varying field emission between the plurality of corresponding light-emitting anodes and field-emission cathodes to thereby effect an addressable grey-scale operation of the flat panel display.

Abstract translation: 利用二极管（二端）像素结构描述场发射型矩阵寻址二极管平板显示器。 平板显示器包括具有多个阴极的阴极组件，每个阴极包括阴极导电材料层和沉积在阴极导电材料上的低有效功函数材料层和具有多个阳极的阳极组件， 每个阳极包括阳极导电材料层和沉积在阳极导电材料上的阴极发光材料层，阳极组件位于阴极组件附近，从而接收来自阴极组件的带电粒子发射，阴极发光材料响应于 带电粒子排放。 平板显示器还包括用于选择性地改变多个对应的发光阳极和场发射阴极之间的场发射的装置，从而实现平板显示器的可寻址的灰度级操作。

公开(公告)号：US5569973A

公开(公告)日：1996-10-29

申请号：US470605

申请日：1995-06-06

Applicant: Steven M. Zimmerman

Inventor： Steven M. Zimmerman

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01J1/00

CPC classification number: H01J9/025 ,  H01J21/105 ,  H01J2201/30457 ,  H01L2924/0002

Abstract: The present invention relates generally to a new integrated Microelectronic Device and a method for making the same. Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar devices or to other electronic devices.

Abstract translation: 本发明一般涉及一种新的集成微电子器件及其制造方法。 微电子器件需要几个独特的三维结构：尖锐的场发射尖端，真空环境中的控制栅格结构内的尖端的精确对准以及收集由尖端发射的电子的阳极。 还公开了形成二极管，三极管，四极管，五极管和其他类似结构的新结构和工艺。 所制造的最终结构也可以连接到其他类似的装置或其他电子装置。

公开(公告)号：US5564959A

公开(公告)日：1996-10-15

申请号：US269229

申请日：1994-06-29

Applicant: Christopher J. Spindt ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Peter C. Searson

Inventor： Christopher J. Spindt ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Peter C. Searson

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: Gated electron emitters are fabricated by processes in which charged particles are passed through a track layer (24, 48, or 144) to form charged-particle tracks (26.sub.1, 50.sub.1, or 146.sub.1). The track layer is etched along the tracks to create open spaces (28.sub.1, 52.sub.1, or 148.sub.1). Electron-emissive elements (30 or 142D) can then be formed at locations respectively centered on the open spaces after which a patterned gate layer (34B, 40B, or 158C) is provided. Alternatively, the open spaces in the track layer can be employed to etch corresponding apertures (54.sub.1) through an underlying non-insulating layer (46) which typically serves as the gate layer. An etch is performed through the apertures to form dielectric open spaces (56.sub.1, 96.sub.1, or 114.sub.1) in an insulating layer (24) that lies below the non-insulating layer. Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) can subsequently be provided, typically in the dielectric open spaces.

Abstract translation: 门电子发射器通过其中带电粒子通过轨道层（24,48或144）以形成带电粒子轨道（261,501或1461）的工艺制造。 轨道层沿着轨道被蚀刻以创建开放空间（281,521或1481）。 然后可以在分开以开放空间为中心的位置处形成电子发射元件（30或142D），之后设置图案化栅极层（34B，40B或158C）。 或者，轨道层中的开放空间可用于通过通常用作栅极层的下面的非绝缘层（46）蚀刻相应的孔（541）。 通过孔进行蚀刻，以在位于非绝缘层下方的绝缘层（24）中形成介电开放空间（561,961或1141）。 随后可以提供电子发射元件（30B，30 / 88D1,98 / 1011或1181），通常在电介质开放空间中。