中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

470 records (took 0.097 seconds)

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    242.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110133211A1

    公开(公告)日：2011-06-09

    申请号：US12956152

    申请日：2010-11-30

    Applicant: Rajesh Kumar MALHAN ,  Naohiro Sugiyama ,  Yuuichi Takeuchi

    Inventor： Rajesh Kumar MALHAN ,  Naohiro Sugiyama ,  Yuuichi Takeuchi

    IPC: H01L29/161 ,  H01L29/812 ,  H01L29/78 ,  H01L29/80 ,  H01L21/337 ,  H01L21/338 ,  H01L21/336

    CPC classification number: H01L29/808 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/8128

    Abstract: A wide band gap semiconductor device having a JFET, a MESFET, or a MOSFET mainly includes a semiconductor substrate, a first conductivity type semiconductor layer, and a first conductivity type channel layer. The semiconductor layer is formed on a main surface of the substrate. A recess is formed in the semiconductor layer in such a manner that the semiconductor layer is divided into a source region and a drain region. The recess has a bottom defined by the main surface of the substrate and a side wall defined by the semiconductor layer. The channel layer has an impurity concentration lower than an impurity concentration of the semiconductor layer. The channel layer is formed on the bottom and the side wall of the recess by epitaxial growth.

    Abstract translation: 具有JFET，MESFET或MOSFET的宽带隙半导体器件主要包括半导体衬底，第一导电类型半导体层和第一导电型沟道层。 半导体层形成在基板的主表面上。 在半导体层中以半导体层被分成源极区和漏极区的方式形成凹部。 凹部具有由基板的主表面和由半导体层限定的侧壁限定的底部。 沟道层的杂质浓度低于半导体层的杂质浓度。 沟槽层通过外延生长形成在凹部的底部和侧壁上。

    Silicon carbide semiconductor device
    248.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US07821013B2

    公开(公告)日：2010-10-26

    申请号：US11501777

    申请日：2006-08-10

    Applicant: Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

    Inventor： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

    IPC: H01L29/12 ,  H01L29/41

    CPC classification number: H01L29/8083 ,  H01L29/1608

    Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

    Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

    METHOD AND APPARATUS FOR TRANSFERRING A WOUND WEB
    249.
    发明申请
    METHOD AND APPARATUS FOR TRANSFERRING A WOUND WEB 有权
    传输网络的方法和装置

    公开(公告)号：US20100237180A1

    公开(公告)日：2010-09-23

    申请号：US12405539

    申请日：2009-03-17

    Applicant: Claudio Antonio Matos ,  Stephan Otto Hiltenkamp ,  Christopher van de Vrande ,  Rajesh Kumar Singh

    Inventor： Claudio Antonio Matos ,  Stephan Otto Hiltenkamp ,  Christopher van de Vrande ,  Rajesh Kumar Singh

    IPC: B65H19/30

    CPC classification number: B65H19/12 ,  B65H2301/418523 ,  B65H2301/41856 ,  B65H2301/4187

    Abstract: A method and apparatus for transferring a web wound about a loaded core. The steps include providing a core shaft axially extending between a core shaft first end and a core shaft second end, providing a web wound about a loaded core, the loaded core coaxially related to the core shaft, axially supporting the core shaft by a first axial support operatively engaged with the core shaft first end and a second axial support operatively engaged with the core shaft second end, axially moving the loaded core from the core shaft to the second axial support, and removing the first axial support and the second axial support.

    Abstract translation: 一种用于传送围绕加载的芯的卷绕卷绕的方法和装置。 所述步骤包括提供在芯轴第一端和芯轴第二端之间轴向延伸的芯轴，提供围绕加载的芯缠绕的腹板，所述加载的芯与芯轴同轴地相关联，轴向支撑芯轴通过第一轴向 与芯轴第一端可操作地接合的支撑件和与芯轴第二端可操作地接合的第二轴向支撑件，将加载的芯轴从芯轴轴向移动到第二轴向支撑件，以及移除第一轴向支撑件和第二轴向支撑件。

Patent Agency Ranking