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公开(公告)号:US20240341166A1
公开(公告)日:2024-10-10
申请号:US18750384
申请日:2024-06-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Takeyoshi WATABE , Satoshi SEO
IPC: H10K85/30 , C07F15/00 , C09K11/06 , H10K30/00 , H10K50/11 , H10K50/16 , H10K50/17 , H10K50/84 , H10K59/12 , H10K59/38 , H10K59/40 , H10K71/00 , H10K71/16 , H10K85/60 , H10K102/00
CPC classification number: H10K85/342 , C07F15/0033 , C09K11/06 , H10K85/615 , H10K85/626 , H10K85/631 , H10K85/633 , H10K85/636 , H10K85/654 , H10K85/6572 , H10K85/6576 , C09K2211/1029 , C09K2211/1044 , C09K2211/185 , H10K30/00 , H10K50/11 , H10K50/16 , H10K50/171 , H10K50/84 , H10K59/12 , H10K59/38 , H10K59/40 , H10K71/00 , H10K71/164 , H10K2102/351
Abstract: An electronic device with high outcoupling efficiency or a high light-trapping effect is provided.
The electronic device includes a first layer and a second layer between a first electrode and a second electrode, the first layer is included between the first electrode and the second layer, the first layer includes a first organic compound and a first substance, the refractive index of a thin film of the first organic compound is higher than or equal to 1 and lower than or equal to 1.75, the first substance has an electron-accepting property, and the second layer has a function of emitting or absorbing light.-
公开(公告)号:US20240324265A1
公开(公告)日:2024-09-26
申请号:US18680760
申请日:2024-05-31
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Nobuharu OHSAWA , Satoshi SEO
IPC: H10K50/11 , C09K11/06 , H10K50/12 , H10K85/60 , H10K101/00 , H10K101/10 , H10K101/30
CPC classification number: H10K50/11 , C09K11/06 , H10K50/121 , H10K85/615 , H10K2101/10 , H10K2101/27 , H10K2101/30 , H10K2101/90
Abstract: A light-emitting element including a fluorescent material as a light-emitting material and having high emission efficiency is provided. The light-emitting element includes a pair of electrodes and an EL layer provided between the pair of electrodes. The EL layer includes a host material and a guest material. The host material is capable of exhibiting thermally activated delayed fluorescence at room temperature. The guest material is capable of exhibiting fluorescence. The second triplet excitation energy level of the guest material is higher than or equal to the lowest singlet excitation energy level of the guest material.
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243.
公开(公告)号:US20240215290A1
公开(公告)日:2024-06-27
申请号:US18396801
申请日:2023-12-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiromi NOWATARI , Satoshi SEO , Nobuharu OHSAWA , Takahiro USHIKUBO , Tetsuo TSUTSUI
CPC classification number: H10K50/13 , B82Y10/00 , H10K50/11 , H10K50/131 , H10K50/19 , H10K85/221 , H10K85/324 , H10K85/615 , H10K85/621 , H10K85/626 , H10K85/633 , H10K85/636 , H10K85/6572 , H10K2101/40
Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≤m≤n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.
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公开(公告)号:US20240172487A1
公开(公告)日:2024-05-23
申请号:US18549205
申请日:2022-03-04
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Shunpei YAMAZAKI , Satoshi SEO
IPC: H10K59/122 , H10K59/12 , H10K59/35
CPC classification number: H10K59/122 , H10K59/1201 , H10K59/35
Abstract: A high-resolution display apparatus is provided. A display apparatus having a high aperture ratio is provided. The display apparatus includes a first light-emitting element and a second light-emitting element. In the first light-emitting element, a first pixel electrode, a first light-emitting layer, and a common electrode are stacked in this order. In the second light-emitting element, a second pixel electrode, a second light-emitting layer, and the common electrode are stacked in this order. A first layer and a second layer are included in a region between the first light-emitting element and the second light-emitting element. The first layer overlaps with the second light-emitting layer and includes the same material as the first light-emitting layer. The second layer overlaps with the first light-emitting layer and includes the same material as the second light-emitting layer. An end portion of the first light-emitting layer and an end portion of the first layer are provided to face each other in the region between the first light-emitting element and the second light-emitting element. An end portion of the second light-emitting layer and an end portion of the second layer are provided to face each other in the region between the first light-emitting element and the second light-emitting element.
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245.
公开(公告)号:US20240164131A1
公开(公告)日:2024-05-16
申请号:US18372234
申请日:2023-09-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Satoshi SEO , Shunpei YAMAZAKI , Takahiro ISHISONE
CPC classification number: H10K50/13 , H10K50/11 , H10K50/85 , H10K85/342 , H10K85/611
Abstract: An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with the longest-wavelength-side local maximum peak of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.
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246.
公开(公告)号:US20240164125A1
公开(公告)日:2024-05-16
申请号:US18513763
申请日:2023-11-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Satoshi SEO , Takahiro ISHISONE , Nobuharu OHSAWA , Yusuke NONAKA , Toshiki SASAKI
IPC: H10K50/11 , G09G3/3225 , H10K50/12 , H10K50/13 , H10K50/15 , H10K50/16 , H10K50/81 , H10K50/82 , H10K50/84 , H10K59/00 , H10K59/121 , H10K59/131
CPC classification number: H10K50/11 , G09G3/3225 , H10K50/12 , H10K50/13 , H10K50/131 , H10K50/15 , H10K50/16 , H10K50/81 , H10K50/82 , H10K50/84 , H10K59/00 , H10K59/1213 , H10K59/131 , G09G2300/0426 , H10K59/38
Abstract: Emission efficiency of a light-emitting element is improved. The light-emitting element has a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material and a host material. The second light-emitting layer includes a phosphorescent material, a first organic compound, and a second organic compound. An emission spectrum of the second light-emitting layer has a peak in a yellow wavelength region. The first organic compound and the second organic compound form an exciplex.
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公开(公告)号:US20240164124A1
公开(公告)日:2024-05-16
申请号:US18372263
申请日:2023-09-25
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Satoko SHITAGAKI , Satoshi SEO , Nobuharu OHSAWA , Hideko INOUE , Masahiro TAKAHASHI , Kunihiko SUZUKI
IPC: H10K50/11 , C09K11/02 , C09K11/06 , H05B33/14 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/818 , H10K50/828 , H10K85/60
CPC classification number: H10K50/11 , C09K11/025 , C09K11/06 , H05B33/14 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/171 , H10K50/818 , H10K50/828 , H10K85/6572 , H10K85/6576 , H10K85/342
Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
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248.
公开(公告)号:US20240155863A1
公开(公告)日:2024-05-09
申请号:US18276750
申请日:2022-02-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Yui Yoshiyasu , Naoaki Hashimoto , Tatsuyoshi TAKAHASHI , Sachiko KAWAKAMI , Satoshi SEO
CPC classification number: H10K50/166 , C09K11/06 , H10K50/13 , H10K85/633
Abstract: A light-emitting device having high heat resistance in a manufacturing process is provided. Provided is a light-emitting device which includes a second electrode over a first electrode with a first EL layer therebetween and in which the first EL layer includes at least a first light-emitting layer; a second EL layer is over the first EL layer; the second EL layer includes at least a second light-emitting layer, a first electron-transport layer, a second electron-transport layer, and an electron-injection layer; the first electron-transport layer is over the second light-emitting layer; the second electron-transport layer is over the first electron-transport layer; an insulating layer is in contact with the side surface of the first light-emitting layer, the side surface of the second light-emitting layer, the side surface of the first electron-transport layer, and the side surface of the second electron-transport layer; the electron-injection layer is over the second electron-transport layer; the insulating layer is positioned between the electron-injection layer and the side surface of the first light-emitting layer, the side surface of the second light-emitting layer, the side surface of the first electron-transport layer, and the side surface of the second electron-transport layer; and the second electron-transport layer includes a heteroaromatic compound including at least one heteroaromatic ring and an organic compound different from the heteroaromatic compound.
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公开(公告)号:US20240147745A1
公开(公告)日:2024-05-02
申请号:US18275759
申请日:2022-02-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Yui YOSHIYASU , Naoaki HASHIMOTO , Tatsuyoshi TAKAHASHI , Sachiko KAWAKAMI , Satoshi SEO
CPC classification number: H10K50/11 , H10K50/16 , H10K50/171 , H10K59/95 , H10K71/233 , H10K85/111
Abstract: A light-emitting device with a high resolution and favorable characteristics manufactured by a photolithography method is provided. In the light-emitting device, a first light-emitting device and a second light-emitting device are adjacent each other. The first light-emitting device includes a first EL layer, and the second light-emitting device includes a second EL layer. The first EL layer includes at least a first light-emitting layer and a first electron-transport layer, and the second EL layer includes at least a second light-emitting layer and a second electron-transport layer. The first electron-transport layer contains a first heteroaromatic compound and a first organic compound, and the second electron-transport layer contains a second heteroaromatic compound and a second organic compound. Edge portions of the first light-emitting layer and the first electron-transport layer are aligned, and edge portions of the second light-emitting layer and the second electron-transport layer are substantially aligned. The distance between the first light-emitting device and the second light-emitting device facing each other is 2 μm to 5 μm.
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公开(公告)号:US20240097194A1
公开(公告)日:2024-03-21
申请号:US18039505
申请日:2021-12-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kaori OGITA , Kazuya SHIMADA , Takashi HIRAHARA , Fumiko TANAKA , Shotaro MURATSUBAKI , Satoshi SEO
IPC: H01M10/0569 , C01G53/00 , H01M4/525 , H01M10/0525 , H01M10/0567
CPC classification number: H01M10/0569 , C01G53/66 , H01M4/525 , H01M10/0525 , H01M10/0567 , C01P2002/72 , C01P2002/76 , C01P2006/40 , H01M2004/028
Abstract: A novel ionic liquid is provided. A highly safe secondary battery with high charge and discharge capacity is provided. The ionic liquid includes a cation represented by General Formula (G1) and an anion represented by Structural Formula (200). In the formula, X1 to X3 each independently represent any one of fluorine, chlorine, bromine, and iodine. One of X1 to X3 may be hydrogen. In addition, n and m each independently represent 0 to 5. Furthermore, a secondary battery including the above-described ionic liquid is provided.
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