公开(公告)号：US20210320003A1

公开(公告)日：2021-10-14

申请号：US17225386

申请日：2021-04-08

Applicant: ASM IP Holding B.V.

Inventor： Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455

Abstract: Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.

公开(公告)号：US20210319982A1

公开(公告)日：2021-10-14

申请号：US17224779

申请日：2021-04-07

Applicant: ASM IP Holding B.V.

Inventor： JaeHyun Kim ,  DaeYoun Kim ,  JeongHo Lee ,  HyunSoo Jang ,  YonJong Jeon

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: A substrate processing apparatus capable of preventing power dissipation and achieving high process reproducibility includes a partition and a processing unit below the partition, wherein the processing unit includes a conductive body and at least one conductive protrusion integrally formed with the conductive body.

公开(公告)号：US11145506B2

公开(公告)日：2021-10-12

申请号：US16588600

申请日：2019-09-30

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  VamsI Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20210313170A1

公开(公告)日：2021-10-07

申请号：US17352330

申请日：2021-06-20

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3105 ,  C23C16/40 ,  H01L27/115

Abstract: A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

公开(公告)号：US20210310123A1

公开(公告)日：2021-10-07

申请号：US17212821

申请日：2021-03-25

Applicant: ASM IP HOLDING B.V.

Inventor： Ankit Kimtee

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67

Abstract: The present disclosure pertains to embodiments of a flush fixture for flushing a showerhead assembly. The flush fixture includes two distinct cavities, an inner cavity and an outer cavity surrounding the inner cavity and not fluidly connected to the inner cavity. When the flush fixture is mounted to a showerhead, inner apertures are in fluid connection with the inner cavity and one or more exhaust holes are in fluid connection with the outer cavity. Separately accessing the inner apertures and the one or more exhaust holes allows the showerhead to be properly flushed.

公开(公告)号：US20210288476A1

公开(公告)日：2021-09-16

申请号：US17190395

申请日：2021-03-03

Applicant: ASM IP Holding B.V.

Inventor： Chia Hsing Wei

IPC: H02B13/025 ,  H01H9/28

Abstract: Lockout tagout assemblies, systems, and methods are disclosed. Exemplary lockout tagout assemblies include a base, an arm moveable with respect to the base, and a member extending at an angle from the arm. The member can engage with a circuit breaker in an off position to retain the circuit breaker in the off position.

公开(公告)号：US11114283B2

公开(公告)日：2021-09-07

申请号：US15923834

申请日：2018-03-16

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20210272821A1

公开(公告)日：2021-09-02

申请号：US17324265

申请日：2021-05-19

Applicant: ASM IP Holding B.V.

Inventor： Theodorus Oosterlaken

IPC: H01L21/67 ,  H01L21/673 ,  F27D5/00 ,  F27D3/00

Abstract: A substrate processing apparatus, comprising a substrate support (32) provided with a support surface (34) for supporting a substrate or a substrate carrier (24) thereon and a support heater (50) constructed and arranged to heat the support surface (34). The apparatus comprises a heat shield constructed and arranged to cover and shield the substrate support (32) when no substrate or substrate carrier (24) is on the support surface.

公开(公告)号：US20210254238A1

公开(公告)日：2021-08-19

申请号：US17166160

申请日：2021-02-03

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Lucas Petersen Barbosa Lima ,  Qi Xie

IPC: C30B29/06 ,  C30B31/10 ,  C30B23/02 ,  C30B31/18 ,  C30B23/00

Abstract: Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor.

公开(公告)号：US20210254216A1

公开(公告)日：2021-08-19

申请号：US17171793

申请日：2021-02-09

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori ,  Vincent Hubert Bernard Gilles Babin ,  Naoto Tsuji

IPC: C23C16/455 ,  C23C16/40

Abstract: A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.