Abstract:
Various integrated device structures are described which incorporate novel substrate materials and channel confinement schemes. For example, devices are described for p-type substrates and novel buffer layers. Such substrates are easier to grow and provide good isolation and low-trap density at the interface between substrate and buffer layer.
Abstract:
The conductivity of a wide range of carbon-containing materials is substantially increased by irradiation with particles having an atomic mass of at least 1. Both polymeric and nonpolymeric, organic and inorganic, materials can be used. The particulate irradiation, for example an ion beam, substantially breaks down the material to a form that includes amorphous carbon having unusually high conductivity. Resistivities of less than 10.sup.-3 ohm-cm are possible. When applied as a film on a substrate, the irradiated material can be used for device interconnects. Conducting lines can be produced in the film, as well as vertical contacts through the film.
Abstract:
There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.
Abstract:
A method of making a bulk heterojunction organic photovoltaic cell by glancing angle deposition. As the disclosed method relies on a trajectory of incident vapor flux that is not parallel to the substrate normal, micro and nano-scale columnar structures of thin films can be grown on the substrate. There is also disclosed a method of forming a donor-acceptor heterojunction by depositing at least one additional organic material over the columnar structures.
Abstract:
A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.
Abstract:
The present disclosure relates to a photosensitive optoelectronic device comprising two electrodes, an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (EG), and an organic sensitizing window layer disposed on the inorganic subcell. In one aspect, the organic sensitizing window layer comprises a singlet fission material. In another aspect, the organic sensitizing window layer comprises a singlet fission host and a phosphorescent emitter dopant, where the singlet fission host exhibits an excitation triplet energy (ET-SF) greater than or equal to an excitation triplet energy (ET-PE) exhibited by the phosphorescent emitter dopant.
Abstract:
A compound that can be used as a donor material in organic photovoltaic devices comprising a non-activated porphyrin fused with one or more non-activated polycyclic aromatic rings or one or more non-activated heterocyclic rings can be obtained by a thermal fusion process. The compounds can include structures of Formula I: By heating the reaction mixture of non-activated porphyrins with non-activated polycyclic aromatic rings or heterocyclic rings to a fusion temperature and holding for a predetermined time, fusion of one or more polycyclic rings or heterocyclic rings to the non-activated porphyrin core in meso,β fashion is achieved resulting in hybrid structures containing a distorted porphyrin ring with annulated aromatic rings. The porphyrin core can be olygoporphyrins.
Abstract:
Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.
Abstract:
A first device is provided. The device includes an organic semiconductor laser. The organic semiconductor laser further includes an optical cavity and an organic layer disposed within the optical cavity. The organic layer includes: an organic host compound; an organic emitting compound capable of fluorescent emission; and an organic dopant compound. The organic dopant compound may also be referred to herein as a “triplet manager.” The triplet energy of the organic dopant compound is lower than or equal to the triplet energy of the organic host compound. The triplet energy of the organic dopant compound is lower than or equal to the triplet energy of the organic emitting compound. The singlet energy of the organic emitting compound is lower than or equal to the singlet energy of the organic host compound.
Abstract:
An electrically powered light source can be constructed with an electroluminescent element operating essentially at room temperature while providing a useful amount of light. A thermal junction located between an OLED and a cover layer of an OLED device is configured to advantageously manage the steady-state temperature of the OLED. The thermal junction may be formed with a thermal resistance of 0.2 m2·K/W or less. A distance across the junction may be 2 mm or less, and/or the junction may include a layer of material having a thermal conductivity of 0.1 W/m·K or greater.